SMD Schottky Barrier Diode CDBK0530 Io = 500 mA VR = 20 Volts RoHS Device Features SOD-123F 0.144(3.65) 0.136(3.45) -Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. 0.069(1.75) 0.061(1.55) -Majority carrier conduction. Mechanical data -Case: SOD-123F standard package, molded plastic. 0.035(0.90) 0.027(0.70) 0.024(0.60) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Polarity: Indicated by cathode band. 0.012 (0.30) Typ. -Mounting position: Any 0.057(1.45) Typ. -Weight: 0.011 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Peak reverse voltage Symbol Min Typ Max Unit V RM 30 V Reverse voltage VR 20 V Average forward rectified current IO 0.5 A I FSM 2 Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) Storage temperature T STG Junction temperature Tj -40 A +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 100mA I F = 500mA VF 0.36 0.47 V Reverse current V R = 20V IR 100 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage CT 100 pF REV:A Page 1 QW-A1106 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBK0530) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 100m Reverse current ( A ) C O -25 O 25 C O 7 5 OC 10 C 100 125 Forward current (mA ) 1000 10m O 100 C 1m O 75 C 100u O 25 C 10u 1u 1 O -25 C 0.1u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 Fig. 3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 120 f=1MHz O T a =25 C Average forward current(%) Capacitance between terminals ( P F) 20 Reverse voltage (V) Forward voltage (V) 60 15 10 50 40 30 20 10 100 80 60 40 20 0 0 0 5 10 15 20 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A Page 2 QW-A1106 Comchip Technology CO., LTD.