PHILIPS CGY2014ATW

INTEGRATED CIRCUITS
DATA SHEET
CGY2014ATW
GSM/DCS/PCS power amplifier
Preliminary specification
File under Integrated Circuits, IC17
2000 Nov 28
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
FEATURES
GENERAL DESCRIPTION
• Operates at 3.6 V battery supply voltage
The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
• Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
• Input power: 5 dBm in GSM band and DCS/PCS band
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
• Wide operating temperature range from
Tamb = −20 to +85 °C
• HTSSOP20 exposed die pad package.
The voltages applied on pins VDD (drain) control the power
of the power amplifier and enable it to be switched off.
APPLICATIONS
• Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VDD
supply voltage
−
3.5
5.2
V
IDD(LB)
GSM positive peak supply current
−
2
−
A
Po(LB)(max)
maximum output power in GSM band
34.5
35
−
dBm
IDD(HB)
DCS/PCS positive peak supply current
−
1.5
−
A
Po(HB)(max)
maximum output power in DCS/PCS band
32
32.5
−
dBm
Tamb
ambient temperature
−20
−
+85
°C
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
CGY2014ATW
HTSSOP20
2000 Nov 28
DESCRIPTION
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
2
VERSION
SOT527-1
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
BLOCK DIAGRAM
handbook, full pagewidth
GND1(LB)
8
RFI(LB)
n.c.
VDD1(LB)
7
VDD2(LB)
6
9
13, 14
1, 10, 12,
16, 19
11
RFO/VDD3(LB)
VGLB
CGY2014ATW
GND
RFI(HB)
20
15
17, 18
2
3
4, 5
VDD1(HB) VDD2(HB)
Fig.1 Block diagram.
2000 Nov 28
3
VGHB
RFO/VDD3(HB)
FCA196
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
PINNING
SYMBOL
PIN
DESCRIPTION
n.c.
1
not connected
RFI(HB)
2
DCS/PCS power amplifier input
VDD1(HB)
3
DCS/PCS first stage supply voltage
VDD2(HB)
4
DCS/PCS second stage supply voltage
VDD2(HB)
5
DCS/PCS second stage supply voltage
VDD2(LB)
6
GSM second stage supply voltage
VDD1(LB)
7
GSM first stage supply voltage
GND1(LB)
8
GSM first stage ground
RFI(LB)
9
GSM power amplifier input
n.c.
10
not connected
VGLB
11
GSM power amplifier gates
n.c.
12
not connected
RFO/VDD3(LB)
13
GSM power amplifier output and third stage supply voltage
RFO/VDD3(LB)
14
GSM power amplifier output and third stage supply voltage
GND
15
ground
n.c.
16
internal connection to ground; pin should not be connected to the board
RFO/VDD3(HB)
17
DCS/PCS power amplifier output and third stage supply voltage
RFO/VDD3(HB)
18
DCS/PCS power amplifier output and third stage supply voltage
n.c.
19
not connected
20
DCS/PCS power amplifier gates
VGHB
−
exposed die
ground
FUNCTIONAL DESCRIPTION
Operating conditions
handbook, halfpage
VDD1(HB) 3
18 RFO/VDD3(HB)
The CGY2014ATW is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the “ETS 300 577 specification”, which are
defined as follows:
VDD2(HB) 4
17 RFO/VDD3(HB)
• ton = 570 µs
16 n.c.
• T = 4.16 ms
VDD2(LB) 6
15 GND
• Duty cycle δ = 1/8.
VDD1(LB) 7
14 RFO/VDD3(LB)
GND1(LB) 8
13 RFO/VDD3(LB)
20 VGHB
n.c. 1
19 n.c.
RFI(HB) 2
VDD2(HB) 5
CGY2014ATW
RFI(LB) 9
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
12 n.c.
Power amplifier
11 VGLB
n.c. 10
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
FCA197
Fig.2 Pin configuration.
2000 Nov 28
4
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDD
supply voltage
5.2
V
Tj(max)
maximum operating junction temperature
150
°C
Tstg
storage temperature
150
°C
Ptot
total power dissipation
2.0
W
Pi(LB)
GSM input power
10
dBm
Pi(HB)
DCS/PCS input power
10
dBm
note 1
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
PARAMETER
CONDITIONS
thermal resistance from junction to case
VALUE
UNIT
30
K/W
note 1
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see Application Note (tbf).
DC CHARACTERISTICS
VDD = 3.5 V; Tamb = 25 °C; measured on the Philips application diagram (see Fig.3); general operating conditions
applied; peak current values measured during burst; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies: pins VDD1(LB), VDD2(LB), RFO/VDD3(LB), VDD1(HB), VDD2(HB) and RFO/VDD3(HB)
VDD
supply voltage
note 1
0
3.5
5.2
V
IDD(LB)
GSM positive peak supply current
Pi(LB) = 5 dBm
−
2
−
A
IDD(HB)
DCS/PCS positive peak supply current
Pi(HB) = 5 dBm
−
1.5
−
A
IDD(lp)(LB)
GSM positive supply current
note 2
−
200
300
mA
IDD(lp)(HB)
DCS/PCS positive supply current
note 3
−
200
300
mA
Notes
1. The supply circuit includes a (drain) MOS switch with RDSon = 40 mΩ. The battery voltage is 3.6 V (typical).
2. VDD1(LB) = 2.8 V; VDD1(LB) adjusted for Po(LB) = 15 dBm, this adjustment is typically 0.5V.
3. VDD1(HB) = 2.8 V; VDD1(HB) adjusted for Po(HB) = 15 dBm, this adjustment is typically 0.6V.
2000 Nov 28
5
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
AC CHARACTERISTICS
VDD1 = 2.8 V; VDD2 = VDD3 = 3.5 V; Tamb = 25 °C; measured on the Philips application diagram (see Fig.3).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low band: GSM power amplifier
Pi(LB)
input power
3
5
7
dBm
fRF(LB)
RF frequency range
880
−
915
MHz
Po(LB)(max)
maximum output power
34.5
35
−
dBm
ηLB
efficiency
50
55
−
%
Po(LB)(min)
minimum output power
VDD = 0 V; Pi(LB) = 5 dBm
−
−30
−
dBm
NRX(LB)
output noise in RX band
Pi(LB) = 5 dBm
fRF = 925 to 935 MHz
−
−
−117
dBm/Hz
fRF = 935 to 960 MHz
−
−
−129
dBm/Hz
H2LB
2nd harmonic level
Pi(LB) = 5 dBm
−
−
−35
dBc
H3LB
3rd harmonic level
Pi(LB) = 5 dBm
−
−
−35
dBc
StabLB
stability
Pi(LB) = 5 dBm; note 1
−
−
−60
dBc
3
5
7
dBm
1710
−
1785
MHz
High band: DCS/PCS power amplifier; note 2
Pi(HB)
input power
fRF(HB)
RF frequency range
Po(HB)(max)
maximum output power
32
32.5
−
dBm
ηHB
efficiency
38
40
−
%
Po(HB)(min)
minimum output power
VDD = 0 V; Pi(HB) = 5 dBm
−
−30
−
dBm
αHB
high band isolation when
low band is operating
VDD(LB) = 3.5 V; Pi(LB) = 5 dBm;
VDD(HB) = 0 V; Pi(HB) = 5 dBm;
note 3
−
0
−
dBm
NRX(HB)
output noise in RX band
Pi(HB) = 5 dBm
−
−
−121
dBm/Hz
H2HB
2nd harmonic level
Pi(HB) = 5 dBm
−
−
−35
dBc
H3HB
3rd harmonic level
Pi(HB) = 5 dBm
−
−
−35
dBc
StabHB
stability
Pi(HB) = 5 dBm; note 1
−
−
−60
dBc
for DCS operation
Notes
1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 6 : 1 load
replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2. The power amplifier can be matched to PCS and/or DCS/PCS operation through optimization of the matching circuit;
see Application Note (tbf).
3. Isolation can be improved to −20 dBm (typical) with a pin diode switched in the DCS output matching circuit.
2000 Nov 28
6
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
APPLICATION INFORMATION
optional circuit
handbook, full pagewidth
2.7 pF
RFout DCS
Vd23DCS
5.6 pF
10 nF
TRL2
TRL9
RFinDCS
n.c.
3.9 nH
Vd1DCS
RFI(HB)
TRL1
VDD1(HB)
100 pF
TRL7 VDD2(HB)
4.7 pF
100 pF VDD2(HB)
100 pF
Vd1GSM
3.3 nH
100 pF
TRL8
3.3 pF
VDD2(LB)
VDD1(LB)
20
1
19
2
18
3
4
17
5
16
CGY2014ATW
6
15
7
14
8
13
9
12
GND1(LB)
VGHB
n.c.
BA891
220 Ω
Vpin
33 nF
TRL3
RFO/VDD3(HB)
2.7 pF
RFout DCS
RFO/VDD3(HB)
3 pF
RFI(LB)
n.c.
11
10
1 pF
n.c.(1)
GND
RFO/VDD3(LB)
RFO/VDD3(LB)
TRL4
RFinGSM
3.3 kΩ
TRL5
n.c.
100 pF
VGLB
RFout GSM
220 Ω
33 nF
4.7 pF
9.1 pF
FCA203
TRL10
Vd23GSM
1 nF
TRL6
56 pF
4 pF
(1) Pin 16 is internally connected to ground and should not be connected to the board.
(2) Transmission lines:
Thickness 0.4 mm, substrate FR4 and εr = 4.7.
TRL1: width = 500 µm, length = 4.5 mm.
TRL2: width = 500 µm, length = 15 mm, thickness = 1.6 mm.
TRL3: width = 300 µm, length = 32 mm.
TRL4: width = 350 µm, length = 4 mm.
TRL5: width = 800 µm, length = 1.5 mm.
TRL6: width = 450 µm, length = 13 mm.
TRL7: width = 500 µm, length = 2.5 mm.
TRL8: width = 300 µm, length = 2.5 mm.
TRL9: width = 800 µm, length = 5 mm.
TRL10: width = 450 µm, length = 2 mm.
Fig.3 Application diagram.
2000 Nov 28
7
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
PACKAGE OUTLINE
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm
E
D
A
SOT527-1
X
c
y
HE
heathsink side
v M A
Dh
Z
11
20
(A 3)
A2
Eh
pin 1 index
A
A1
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
Dh
E(2)
Eh
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.10
0.15
0.05
0.95
0.80
0.25
0.30
0.19
0.20
0.09
6.6
6.4
4.3
4.1
4.5
4.3
3.1
2.9
0.65
6.6
6.2
1.0
0.75
0.50
0.2
0.13
0.1
0.5
0.2
8
0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-11-12
00-07-12
SOT527-1
2000 Nov 28
EUROPEAN
PROJECTION
8
o
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2000 Nov 28
9
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable(2)
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(1)
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Nov 28
10
Philips Semiconductors
Preliminary specification
GSM/DCS/PCS power amplifier
CGY2014ATW
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Nov 28
11
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Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 70
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
403506/01/pp12
Date of release: 2000
Nov 28
Document order number:
9397 750 07456