CHA2394 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2394 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. IN The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. OUT Vgs1&2 Vgs3 22 4 ■ 2.5dB Noise Figure ■ 21dB gain ■ ±1.5dB gain flatness ■ Low DC power consumption, 60mA @ 3.5V ■ Chip size : 1.72 X 1.08 X 0.10 mm 20 3,5 18 3 16 2,5 14 2 12 1,5 Gain (dB) ■ Broadband performances : 36-40GHz 10 NF (dB) Typical on wafer measurements : Main Features 1 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB NF Parameter Min Typ Max Unit 40 GHz Operating frequency range 36 Small signal gain 18 21 dB Output power at 1dB gain compression 8 12 dBm Noise figure 2.5 3.0 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA23942240 -28-Aug.-02 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-40GHz Very Low Noise Amplifier CHA2394 Electrical Characteristics Tamb = +25°C, Vd1,2,3 = 3.5V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 36 Small signal gain (1) 18 Small signal gain flatness (1) ∆Gsb Is P1dB VSWRin Max Unit 40 GHz 21 dB ±1.5 dB Gain flatness over 40MHz ( within -30 ; +75°C ) 0.5 Reverse isolation (1) 25 30 dB Output power at 1dB gain compression 5 8 dBm Input VSWR (1) VSWRout Output VSWR (1) NF Noise figure (2) Vd DC Voltage Id Typ Vd Vg -2 Bias current (2) dBpp 2.5:1 3.0:1 2.5:1 3.0:1 2.5 3.0 dB 3.5 -0.25 4 +0.4 V V 60 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. (2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2 voltage. Absolute Maximum Ratings (1) Tamb. = 25°C Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Id Drain bias current 150 mA Vdg Maximum drain to gate voltage (Vd - Vg) +5.0 V Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Pin Maximum continuous input power -5 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA23942240 -28-Aug.-02 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Vd = 3.5 Volt, Id = 60 mA. Freq. GHz S11 dB S11 /° S12 dB S12 /° S21 dB S21 /° S22 dB S22 /° 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 -2,75 -2,67 -2,61 -2,64 -2,70 -2,86 -3,14 -3,69 -4,64 -6,67 -12,47 -24,80 -17,12 -23,20 -19,03 -12,46 120,50 112,34 103,14 93,91 84,09 73,06 60,56 45,51 26,86 1,63 -33,41 45,44 23,80 -42,55 -169,48 150,31 -48,15 -47,38 -46,75 -47,13 -47,59 -47,20 -48,55 -51,10 -53,09 -49,95 -46,00 -42,45 -41,43 -40,56 -39,68 -38,71 148,90 124,38 104,04 86,03 78,03 57,56 43,27 30,27 53,09 40,63 19,49 -42,78 -103,62 -152,24 170,39 143,10 -29,86 -30,25 -27,37 -24,34 -19,83 -14,48 -8,77 -2,99 3,00 9,18 15,20 18,91 19,89 20,36 20,77 20,98 60,85 88,05 109,54 126,91 140,52 146,82 144,71 136,53 121,47 98,55 62,25 12,46 -32,13 -67,68 -100,08 -130,13 -8,63 -8,34 -8,61 -8,92 -9,57 -10,03 -10,82 -12,09 -13,97 -17,34 -22,38 -16,56 -14,80 -16,05 -18,09 -21,69 -167,63 -172,68 -179,98 172,06 163,86 156,11 146,54 136,06 127,00 120,22 145,19 167,67 144,56 123,76 107,73 77,58 36,00 37,00 38,00 39,00 40,00 -9,33 -8,60 -8,42 -8,47 -9,42 121,49 98,97 82,30 68,26 54,37 -37,54 -36,14 -34,82 -33,60 -32,98 123,52 104,39 83,69 64,74 45,70 21,06 20,87 20,58 20,27 19,84 -159,84 172,52 146,27 121,22 95,76 -27,59 -22,46 -17,76 -14,75 -12,44 9,57 -82,68 -110,30 -129,22 -146,78 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 -10,23 -10,72 -10,45 -9,61 -8,75 -7,93 -6,42 -4,94 -3,67 -2,71 46,67 39,92 31,54 16,79 -4,98 -30,22 -61,17 -93,19 -122,84 -147,44 -32,48 -32,21 -31,68 -31,02 -30,90 -30,45 -30,47 -31,52 -32,48 -33,68 26,65 11,28 -6,54 -24,45 -42,39 -61,72 -83,47 -107,28 -128,35 -147,17 19,24 18,67 18,19 17,83 17,42 17,00 16,37 15,28 13,83 12,15 72,14 50,20 28,89 6,99 -15,61 -38,88 -63,88 -89,82 -114,96 -137,91 -11,06 -10,53 -10,41 -10,02 -9,83 -9,17 -8,39 -7,55 -6,98 -6,69 -164,32 -179,35 170,06 160,92 151,98 144,58 134,96 121,85 108,11 91,01 Ref. : DSCHA23942240 -28-Aug.-02 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Typical Output Power ( P-1dB gain compression ) Measurements. ( CW on wafer ) Gain & P-1dB ( dB, dBm ) Conditions : Vd = 3.5 Volt, Frequency = 38 GHz. 22 20 18 16 14 12 10 8 6 4 Gain 20 30 40 50 60 P-1dB 70 80 90 100 Current Id ( mA ) Gain & P-1dB ( dB, dBm ) Conditions : Id = 60 mA, Frequency = 38 GHz. 22 20 18 16 14 12 10 8 6 4 Gain 2,5 3 P-1dB 3,5 4 4,5 Bias voltage Vd ( Volt ) Ref. : DSCHA23942240 -28-Aug.-02 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Typical S parameters Measurements ( on wafer ). Gain, Rloss (dB) Bias Conditions : Vd = 3.5 Volt, Id = 60 mA. 25 20 15 10 5 0 -5 -10 -15 -20 dBS11 25 30 dBS21 35 dBS22 40 45 50 Frequency (GHz) Typical Gain &NF Measurements ( on wafer ). Vd = 3.5 Volt, Id = 60 mA. 22 4 20 3,5 18 3 16 2,5 14 2 12 1,5 10 1 NF (dB) Gain (dB) Bias Conditions : 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Ref. : DSCHA23942240 -28-Aug.-02 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Typical Bias Tuning for Low Noise Operation The circuit schematic is given below : Vd 100 100 50 IN OUT Vg 3 Vg 1,2 For low noise operation, a separate access to the gate voltages of the two first stages ( Vgs1&2 ), and of the output stage ( Vgs3 ) is provided. Nominal bias for low noise operation is obtained for a typical current of 20 mA for the output stage and 15 mA for each of the two first stages ( 50 mA for the amplifier ). The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier. A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping the previous value for Vgs3. Ref. : DSCHA23942240 -28-Aug.-02 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Chip Assembly and Mechanical Data To Vdd DC Drain supply feed 100pF IN OUT 100pF 100pF To Vgs 1&2 DC Gate supply feed To Vgs 3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 1720+/-60 1125 340 415 1080 +/- 60 505 415 710 Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA23942240 -28-Aug.-02 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Very Low Noise Amplifier CHA2394 Ordering Information Chip form : CHA2394-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA23942240 -28-Aug.-02 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice