Central TM Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed switching applications. Marking code is C2R. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC PD UNITS V V V V mA mW 40 40 15 5.0 200 350 TJ,Tstg ΘJA oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICES ICES BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCE=20V VCE=20V, TA=65oC IC=100µA IC=10µA IC=10mA IE=100µA IC=30mA, IB=3.0mA IC=30mA, IB=3.0mA, TA=65oC IC=100mA, IB=10mA IC=300mA, IB=30mA IC=30mA, IB=3.0mA IC=100mA, IB=10mA IC=300mA, IB=30mA VCE=0.4V, IC=30mA VCE=0.5V, IC=100mA 170 MIN MAX 0.5 3.0 40 40 15 5.0 0.75 30 25 0.20 0.30 0.28 0.50 0.95 1.20 1.70 120 UNITS µA µA V V V V V V V V V V V SYMBOL hFE fT Cob Cib ton toff tS TEST CONDITIONS MIN VCE=1.0V, IC=300mA 15 VCE=10V, IC=30mA, f=100MHz 350 VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCC=10V, IC=300mA, IB1=30mA VCC=10V, IC=300mA, IB1=IB2=30mA VCC=10V, IC=IB1=IB2=10mA MAX UNITS 5.0 8.0 18 28 18 MHz pF pF ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 171