CQDD-25M CQDD-25N SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-25M CQDD-25N Peak Repetitive Off-State Voltage VDRM 600 800 RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=8.3ms IT(RMS) ITSM 25 A 150 A I2t 94 A2s PGM PG (AV) IGM 40 W 1.0 W 10 A I 2t Value for Fusing, t=8.3ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs UNITS V VGM di/dt 16 V 10 A/μs -40 to +125 °C -40 to +150 °C Thermal Resistance TJ Tstg ΘJA 60 °C/W Thermal Resistance ΘJC 1.7 °C/W Critical Rate of Rise of On-State Current Repetitive, f=60Hz Operating Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT MAX UNITS 11.1 VD=12V, RL=10Ω, QUAD IV IT=100mA 28.2 60 mA 18.4 50 mA 1.03 1.50 V 1.74 2.50 V VTM VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=35A, tp=380μs dv/dt VD=2 /3 VDRM, RGK=∞, TC=125°C VGT TYP Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III 10 μA 2.0 mA 30 mA 1.80 6.0 V V/μs R2 (12-February 2010) CQDD-25M CQDD-25N SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R2 (12-February 2010) w w w. c e n t r a l s e m i . c o m