RENESAS CR08AS

Preliminary Datasheet
CR08AS-12
R07DS0133EJ0500
(Previous: REJ03G0349-0400)
Rev.5.00
Sep 10, 2010
Thyristor
Low Power Use
Features
 Non-Insulated Type
 Glass Passivation Type
 Surface Mounted type
 IT (AV) : 0.8 A
 VDRM : 600 V
 IGT : 100 A
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
1
2
RENESAS Package code:
de:
e: P
PLZZ0004CB-A
(Package name: SOT-8
OT-89
T-89)
3
4
L
O
E
4
G
K
P
2, 4
1
2
3
3
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
1
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Voltage class
12 (Mark AF)
600
720
480
600
480
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Symbol
Ratings
Unit
IT (RMS)
IT (AV)
1.26
0.8
A
A
ITSM
10
A
I2t
0.42
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
50
W
W
V
V
A
°C
°C
mg
Unit
V
V
V
V
V
Conditions
Commercial frequency, sine half wave
Note2
180° conduction, Ta = 51°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 k.
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
Page 1 of 8
CR08AS-12
Preliminary
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
0.5
Unit
mA
Repetitive peak off-state current
IDRM
—
—
0.5
mA
On-state voltage
VTM
—
—
1.5
V
Ta = 25°C, ITM = 2.5 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V,
Note4
IT = 0.1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 k
Gate trigger current
IGT
1Note3
—
100Note3
A
Tj = 25°C, VD = 6 V,
Note4
IT = 0.1 A
Holding current
IH
—
1.5
3
mA
Rth (j-a)
—
—
65
°C/W
Tj = 25°C, VD = 12 V,
RGK = 1 k
Junction to ambientNote2
Thermal resistance
Test conditions
Tj = 125°C, VRRM applied,
RGK = 1 k
Tj = 125°C, VDRM applied,
RGK = 1 k
Notes: 2. Soldering with ceramic plate (25 mm  25 mm  t0.7 mm).
3. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (A)
20 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
4. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
Page 2 of 8
CR08AS-12
Preliminary
Performance Curves
102
7 Ta = 25°C
5
3
2
Surge On-State Current (A)
10
101
7
5
3
2
100
7
5
3
2
1
2
3
4
Gate Voltage (V)
101
7
5
3
2
100
7
5
3
2
6
5
4
3
2
1
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
VFGM = 6V
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
IGT = 100μA
(Tj = 25°C)
VGD = 0.2V
IFGM = 0.3A
10–2
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
103
7
5
3
2
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
0.9
Gate Trigger Voltage (V)
7
Conduction Time (Cycles at 60Hz)
7
5
3
2
10–1
8
On-State Voltage (V)
102
7
5
3
2
9
0
100
5
× 100 (%)
0
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10–1
Rated Surge On-State Current
Distribution
0.8
Typical Example
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
Junction Temperature (°C)
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7 25×25×t0.7
5 Aluminum Board
3
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
Page 3 of 8
CR08AS-12
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
θ = 30° 60° 90° 120°
180°
1.4
1.2
1.0
0.8
0.6
θ
0.4
360°
0.2
0
Resistive,
inductive loads
0
Ambient Temperature (°C)
Average Power Dissipation (W)
1.6
60
θ = 30°
40
90° 180°
60° 120°
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
1.6
θ
360°
100
80
65°C/W
60
90°C/W
40
20 R
th(j–a) = 200°C/W
0
Average Power Dissipation (W)
Ambient Temperature (°C)
80
Average On-State Current (A)
θ = 30° 60° 90° 120°
180°
1.4
1.2
1.0
0.8
0.6
0.4
θ
0.2
360°
θ
Resistive loads
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
1.6
25×25×t0.7
140 Aluminum Board
θ
θ
360°
120
Resistive loads
Natural convection
100
80
60
40
60°
120°
θ = 30°
90°
180°
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
Average Power Dissipation (W)
160
Ambient Temperature (°C)
Resistive,
inductive loads
Natural convection
100
Average On-State Current (A)
Resistive, inductive loads
140
Natural convection
θ = 180°
120
0
θ
360°
120
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
160
0
25×25×t0.7
140 Aluminum Board
90° 180°
θ = 30° 60° 120° 270°
DC
1.4
1.2
1.0
0.8
0.6
θ
0.4
360°
0.2
0
Resistive,
inductive loads
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Page 4 of 8
CR08AS-12
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
× 100 (%)
100
Resistive,
inductive loads
Natural convection
80
60
20
90° 180°
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Typical Example
140
120
100
RGK = 1kΩ
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Gate to Cathode Resistance
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
120
Typical Example
100
80
60
40
20
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
101
7
5
3
2
160
Average On-State Current (A)
× 100 (%)
0
DC
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
× 100 (%)
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
θ = 30° 60° 120° 270°
160
Typical Example
140
Tj = 125°C
RGK = 1kΩ
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate to Cathode Resistance (kΩ)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Holding Current vs.
Gate to Cathode Resistance
Distribution
Typical Example
IGT(25°C) = 35μA
100
7
5
3
2
10–1
7
5
3
2
RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
× 100 (%)
40
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
360°
0
Holding Current (mA)
θ
120
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
Ambient Temperature (°C)
160
25×25×t0.7
140 Aluminum Board
Breakover Voltage vs.
Junction Temperature
500
Typical Example
IGT(25°C) IH(1kΩ)
0.9mA
400 # 1 25μA
300
200
#1
100
Tj = 25°C
0
–1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate to Cathode Resistance (kΩ)
Page 5 of 8
CR08AS-12
Preliminary
Turn-On Time vs.
Gate Current
Holding Current vs.
Gate Trigger Current
4.0
Tj = 25°C
Turn-On Time (μs)
Holding Current (mA)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2
5 7 101
3
2
3
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Turn-Off Time (μs)
Typical Example
Distribution
20
15
10
5
20
40
60
80 100 120 140 160
Junction Temperature (°C)
× 100 (%)
Turn-Off Time vs.
Junction Temperature
30
0
100
7
5
3
2
Gate Current (mA)
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
0
101
7
5
3
2
Gate Trigger Current (μA)
40
25
160
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Thermal Impedance vs.
Board Dimensions
#1
#2
102
7
5
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 10 2
Gate Current Pulse Width (μs)
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
320
Thermal resistance (°C/W)
× 100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
103
7
5
3
2
Tj = 25°C
Typical Example
IGT(DC)
# 1 10μA
# 2 65μA
Typical Example
140
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
3
2
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
5 7 10 2
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
0 0
10
102
7 Typical Example
5
3
2
280
240
Without Epoxy Plate
200
160
120
80
t0.7
Aluminum Board
40 10×10
Epoxy Plate With Copper Foil
0
0 10 20 30 40 50 60
70
80
Board Dimensions (mm)
Regular Square One Side
Page 6 of 8
CR08AS-12
Preliminary
Package Dimensions
Previous Code
UPAK / UPAKV
RENESAS Code
PLZZ0004CA-A
4.5 ± 0.1
1.5 1.5
3.0
Package Name
SOT-89
JEITA Package Code
SC-62
0.4
RENESAS Code
PLZZ0004CB-A
0.44 Max
Previous Code
⎯
(0.2)
0.53 Max
0.48 Max
(1.5)
2.5 ± 0.1
4.25 Max
φ1
Unit: mm
1.5 ± 0.1
0.44 Max
0.8 Min
1.8 Max
MASS[Typ.]
0.050g
(2.5)
JEITA Package Code
SC-62
(0.4)
Package Name
UPAK
MASS[Typ.]
0.48g
Unit: mm
G
K
P
L
O
E
4.6Max
1.5 ± 0.1
4.2Ma
Max
0.8Min
n
2.5
5 ± 0.1
1.6 ± 0.2
0.58Max
1.5
3.0
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
+0.03
0.4 –0.05
0.48Max
Page 7 of 8
CR08AS-12
Preliminary
Order Code
Lead form
Surface-mounted type
Standard
packing
Taping
Quantity
4000
Standard order code
Type name – ET +Direction (1 or 2) +4
Standard order
code example
CR08AS-12-ET14
Note : Please confirm the specification about the shipping in detail.
R07DS0133EJ0500 Rev.5.00
Sep 10, 2010
Page 8 of 8
Notice
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