RENESAS CR6FM-12B

Preliminary Datasheet
CR6FM-12B
R07DS1095EJ0100
Rev.1.00
Jul 12, 2013
600V-6A-Thyristor
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Type
IT (AV) : 6 A
VDRM : 600 V
IGT: 10mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. Cathode
2. Anode
3. Gate
3
1
1
2 3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
Symbol
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 7
CR6FM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Preliminary
Symbol
IT(RMS)
IT(AV)
Ratings
9.4
6
Unit
A
A
ITSM
90
A
I2t
34
A2s
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.0
W
W
V
V
A
°C
°C
g
Viso
2000
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 110°C
60 Hz sine half wave, 1full cycle,
peak value, non-repetitive
Value corresponding to 1cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
Gate trigger current
Holding current
Thermal resistance
IGT
IH
Rth(j-c)
Min.
—
—
—
—
—
Typ.
—
—
—
—
—
Max.
2.0
5.0
2.0
5.0
1.7
Unit
mA
mA
mA
mA
V
—
0.2
0.1
—
—
—
—
—
—
—
15
—
1.0
—
—
10
—
4.0
V
V
V
mA
mA
°C/W
Test conditions
Tj = 125°C, VRRM applied
Tj = 150°C, VRRM applied
Tj = 125°C, VDRM applied
Tj = 150°C, VDRM applied
Tj = 25°C, ITM = 20 A
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to case Note1
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
Page 2 of 7
CR6FM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
100
Surge On-State Current (A)
102
101
1
2
3
4
VFGM = 6V
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
102
101
Gate Trigger Current vs.
Junction Temperature
PGM = 5W
PG(AV)
= 0.5W
IGT = 10mA
VGD = 0.1V
101
IFGM = 2A
102
103
103
Typical Example
102
101
100
–40
0
40
80
160
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
–40
20
Gate Characteristics
100
101
40
Conduction Time (Cycles at 50Hz)
VGT = 1V
10-1
60
On-State Voltage (V)
102
101
80
0
100
5
× 100 (%)
100
0
0
40
80
120
Junction Temperature (°C)
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 125°C
102
101
100
10–1 –3
10
10–2
10–1
100
101
Time (s)
Page 3 of 7
CR6FM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
16
160
14
140
θ
120
360°
Case Temperature (°C)
Average Power Dissipation (W)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
180°
12
10
120°
90°
60°
θ = 30°
8
6
θ
4
360°
2
0
0
4
6
8
90°
40
60°
θ = 30°
0
2
4
6
8
12
10
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
12
180°
120°
θ = 30°
10
90°
60°
8
6
4
θ
2
360°
θ
Case Temperature (°C)
14
140
θ
120
360°
100
Resistive
loads
60
180°
120°
40
90°
Resistive loads
0
0
2
4
6
10
8
0
12
θ
80
20
0
θ = 30°
2
4
60°
6
10
8
12
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
16
160
14
140
DC
270°
180°
120°
90°
12
60°
10
θ = 30°
8
6
θ
4
360°
2
0
Resistive,
inductive loads
0
2
4
6
8
10
Average On-State Current (A)
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
12
Case Temperature (°C)
Average Power Dissipation (W)
120°
Average On-State Current (A)
16
Average Power Dissipation (W)
180°
60
0
12
10
80
20
Resistive,
inductive loads
2
Resistive,
inductive loads
100
Resistive,
inductive loads
θ
360°
120
100
80
60
40
60° 180°
20
0
θ = 30°
0
2
90°
4
270°
120°
6
DC
8
10
12
Average On-State Current (A)
Page 4 of 7
Preliminary
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0 1
10
102
103
104
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 150°C
140
120
100
80
60
40
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Turn-Off Time vs.
Junction Temperature
103
80
Typical Example
70
Turn-Off Time (μs)
Breakover Voltage (dv/dt = vV/μs)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
× 100 (%)
Junction Temperature (°C)
× 100 (%)
Typical Example
Breakover Voltage (dv/dt = vV/μs)
160
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%)
CR6FM-12B
102
Typical Example
60
50
40
30
Distribution
20
IT = 6A, –di/dt = 5A/μs,
VD = 300V, dv/dt = 20V/μs
VR = 50V
10
101
–40
0
40
80
120
Junction Temperature (°C)
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
160
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Page 5 of 7
CR6FM-12B
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101 -1
10
100
101
102
Gate Current Pulse Width (μs)
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
Page 6 of 7
CR6FM-12B
Preliminary
Package dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
CR6FM-12B#BB0
Note:
Packing
Tube
Quantity
50 pcs.
Remark
Straight type
Please confirm the specification about the shipping in detail.
R07DS1095EJ0100 Rev.1.00
Jul 12, 2013
Page 7 of 7
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