Preliminary Datasheet CR6FM-12B R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 600V-6A-Thyristor Medium Power Use Features • • • • • Insulated Type • Planar Type IT (AV) : 6 A VDRM : 600 V IGT: 10mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. Cathode 2. Anode 3. Gate 3 1 1 2 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 Symbol VRRM VRSM VR(DC) VDRM VD(DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 7 CR6FM-12B Parameter RMS on-state current Average on-state current Surge on-state current Preliminary Symbol IT(RMS) IT(AV) Ratings 9.4 6 Unit A A ITSM 90 A I2t 34 A2s PGM PG(AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +150 – 40 to +150 2.0 W W V V A °C °C g Viso 2000 V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine half wave 180° conduction, Tc = 110°C 60 Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60 Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, each terminal to case Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Repetitive peak off-state current IDRM On-state voltage VTM Gate trigger voltage Gate non-trigger voltage VGT VGD Gate trigger current Holding current Thermal resistance IGT IH Rth(j-c) Min. — — — — — Typ. — — — — — Max. 2.0 5.0 2.0 5.0 1.7 Unit mA mA mA mA V — 0.2 0.1 — — — — — — — 15 — 1.0 — — 10 — 4.0 V V V mA mA °C/W Test conditions Tj = 125°C, VRRM applied Tj = 150°C, VRRM applied Tj = 125°C, VDRM applied Tj = 150°C, VDRM applied Tj = 25°C, ITM = 20 A instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C, VD = 1/2 VDRM Tj = 150°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to case Note1 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 Page 2 of 7 CR6FM-12B Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 100 Surge On-State Current (A) 102 101 1 2 3 4 VFGM = 6V Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 102 101 Gate Trigger Current vs. Junction Temperature PGM = 5W PG(AV) = 0.5W IGT = 10mA VGD = 0.1V 101 IFGM = 2A 102 103 103 Typical Example 102 101 100 –40 0 40 80 160 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 20 Gate Characteristics 100 101 40 Conduction Time (Cycles at 50Hz) VGT = 1V 10-1 60 On-State Voltage (V) 102 101 80 0 100 5 × 100 (%) 100 0 0 40 80 120 Junction Temperature (°C) R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tc = 125°C 102 101 100 10–1 –3 10 10–2 10–1 100 101 Time (s) Page 3 of 7 CR6FM-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 16 160 14 140 θ 120 360° Case Temperature (°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 180° 12 10 120° 90° 60° θ = 30° 8 6 θ 4 360° 2 0 0 4 6 8 90° 40 60° θ = 30° 0 2 4 6 8 12 10 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 12 180° 120° θ = 30° 10 90° 60° 8 6 4 θ 2 360° θ Case Temperature (°C) 14 140 θ 120 360° 100 Resistive loads 60 180° 120° 40 90° Resistive loads 0 0 2 4 6 10 8 0 12 θ 80 20 0 θ = 30° 2 4 60° 6 10 8 12 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 16 160 14 140 DC 270° 180° 120° 90° 12 60° 10 θ = 30° 8 6 θ 4 360° 2 0 Resistive, inductive loads 0 2 4 6 8 10 Average On-State Current (A) R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 12 Case Temperature (°C) Average Power Dissipation (W) 120° Average On-State Current (A) 16 Average Power Dissipation (W) 180° 60 0 12 10 80 20 Resistive, inductive loads 2 Resistive, inductive loads 100 Resistive, inductive loads θ 360° 120 100 80 60 40 60° 180° 20 0 θ = 30° 0 2 90° 4 270° 120° 6 DC 8 10 12 Average On-State Current (A) Page 4 of 7 Preliminary 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150°C 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 80 Typical Example 70 Turn-Off Time (μs) Breakover Voltage (dv/dt = vV/μs) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Junction Temperature (°C) × 100 (%) Typical Example Breakover Voltage (dv/dt = vV/μs) 160 Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR6FM-12B 102 Typical Example 60 50 40 30 Distribution 20 IT = 6A, –di/dt = 5A/μs, VD = 300V, dv/dt = 20V/μs VR = 50V 10 101 –40 0 40 80 120 Junction Temperature (°C) R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 5 of 7 CR6FM-12B Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (μs) R07DS1095EJ0100 Rev.1.00 Jul 12, 2013 Page 6 of 7 CR6FM-12B Preliminary Package dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number CR6FM-12B#BB0 Note: Packing Tube Quantity 50 pcs. 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