Preliminary Datasheet CRD5AS-12B R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 Reverse Conducting Thyristor Medium Power Use Features Built-in reverse conducting diode Planar Type IT (AV) : 5 A VDRM : 600 V IGT: 100 A The Product guaranteed maximum junction temperature 150C Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 1. 2. 3. 4. 3 12 1 3 Cathode Anode Gate Anode Applications Switching mode power supply, Regulator for motorcycle Maximum Ratings Parameter Voltage class 12 600 Symbol Repetitive peak off-state voltage Note1 VDRM Notes: 1. With gate to cathode resistance RGK=220 Parameter RMS on-state current Average on-state current Symbol IT(RMS) IT(AV) Ratings 7.8 5 Unit A A ITSM 90 A I2 t 33 A2s Surge reverse-conducting current IRCSM 3 A Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass PGM PG(AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +150 – 40 to +150 0.26 W W V V A C C g Surge on-state current I2t for fusing R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 Unit V Conditions Commercial frequency, sine half wave 180 conduction, Tc=113C 60Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60Hz, surge on-state current sine half wave, pulse width 10ms peak value, non-repetitive, RGK=0 Typical value Page 1 of 5 CRD5AS-12B Preliminary Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM Min. — Typ. — Max. 2.0 Unit mA On-state voltage VTM — — 1.8 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.1 — — 0.8 — V V Gate trigger current Holding current IGT IH 1 — — 3 100 — A mA Thermal resistance Rth(j-c) — — 3.0 C/W Test conditions Tj = 150C, VDRM applied RGK=220Ω Tj = 25C, ITM = 15 A instantaneous value Tj = 25C, VD = 6 V, IT = 0.1 A Tj = 150C, VD = 1/2 VDRM RGK=220Ω Tj = 25C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V RGK=220Ω Junction to case Note2 Notes: 2. The measurement point for case temperature is at anode tab. R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 Page 2 of 5 CRD5AS-12B Preliminary Performance Curves Maximum On-State Characteristics 100 Tc = 25°C Surge On-State Current (A) On-State Current (A) 102 Rated Surge On-State Current 101 100 10−1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 × 100 (%) VGD = 0.1V 10−1 100 101 102 101 102 103 VD = 6V RL = 60Ω 102 101 Typical Example 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 1.0 Gate Trigger Voltage (V) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10−1 0.8 Typical Distribution 0.6 Typical Example 0.2 VD = 6V RL = 60Ω 0 40 80 120 Junction Temperature (°C) R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 160 Transient Thermal Impedance (°C/W) Gate Voltage (V) PGM = 0.5W IGT = 100µA IFGM = 0.3A (Tj = 25°C) 0 –40 0 100 Gate Trigger Current vs. Junction Temperature VGT = 0.8V 0.4 20 Gate Characteristics VFGM = 6V 10−2 40 Conduction Time (Cycles at 60Hz) PG(AV) = 0.1W 100 60 On-State Voltage (V) 102 101 80 100 103 101 102 103 Junction to ambient 102 101 100 −3 10 Junction to case 10−2 10−1 100 Time (s) Page 3 of 5 CRD5AS-12B Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) 12 140 θ 180° 360° 10 Resistive loads 8 90° θ = 30° 60° 120° 6 4 2 160 0 1 2 3 4 5 6 8 7 120 100 θ = 30° 80 60° 90° 120° 180° 60 θ 40 θ 360° 20 Resistive loads 0 0 1 2 3 4 5 6 7 Average On-State Current (A) Average On-State Current (A) Breakover Voltage vs. Rate of Rise of Off-State Voltage Breakover Voltage vs. Junction Temperature Typical Example 140 Tj = 125°C RGK = 220Ω 120 100 80 60 40 20 0 0 10 101 102 103 Rate of Rise of Off-State Voltage (V/μs) R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 × 100 (%) × 100 (%) θ Case Temperature (°C) 14 0 Breakover Voltage (dv/dt = xV/μs) Breakover Voltage (dv/dt = 1V/μs) 160 Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Average Power Dissipation (W) 16 160 Typical Example 8 RGK = 220Ω 140 120 100 80 60 40 20 0 –40 0 40 80 160 120 Junction Temperature (°C) Page 4 of 5 CRD5AS-12B Preliminary Package dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part Number CRD5AS-12B#B00 CRD5AS-12B-T13#B00 Packing Tube Embossed Tape Quantity 75 pcs. 3000 pcs. 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