CY7C109B CY7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). — tAA = 12 ns • Low active power — 495 mW (max.) • Low CMOS standby power — 11 mW (max.) (L Version) • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2, and OE options • CY7C109B is available in standard 400-mil-wide SOJ and 32-pin TSOP type I packages. The CY7C1009B is available in a 300-mil-wide SOJ package Reading from the device is accomplished by taking Chip Enable One (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW). CY7C109B is available in standard 400-mil-wide SOJ and 32pin TSOP type I packages. The CY7C1009B is available in a 300-mil-wide SOJ package. The CY7C109B and CY7C1009B are functionally equivalent in all other respects Pin Configurations[2] Logic Block Diagram SOJ Top View NC A16 A14 A12 A7 A6 A5 A4 A3 I/O0 A2 A1 INPUT BUFFER OE A0 I/O0 I/O1 I/O2 GND SENSE AMPS I/O2 128K x 8 ARRAY COLUMN DECODER I/O3 A11 A9 A8 A13 WE I/O5 CE2 A15 VCC I/O6 NC A16 A14 I/O7 A12 A7 A6 A5 A4 I/O4 POWER DOWN A9 A 10 A 11 A 12 A 13 A14 A15 A16 CE1 CE2 WE I/O1 ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 TSOP I Top View (not to scale) VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Note: 1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. 2. NC pins are not connected on the die. Cypress Semiconductor Corporation Document #: 38-05038 Rev. *C • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 3, 2006 [+] Feedback CY7C109B CY7C1009B Selection Guide 7C109B-12 7C1009B-12 12 90 10 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Maximum CMOS Standby Current (L) 7C109B-15 7C1009B-15 15 80 10 2 7C109B-20 7C1009B-20 20 75 10 Unit ns mA mA mA Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Static Discharge Voltage............................................ >2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-Up Current ..................................................... >200 mA Ambient Temperature with Power Applied............................................. –55°C to +125°C Operating Range Supply Voltage on VCC to Relative GND[3] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[3] ....................................–0.5V to VCC + 0.5V Range Ambient Temperature VCC Commercial 0°C to +70°C 5V ± 10% DC Input Voltage[3] .................................–0.5V to VCC + 0.5V Industrial −40°C to +85°C 5V ± 10% Electrical Characteristics Over the Operating Range 7C109B-12 7C1009B-12 Parameter Description Test Conditions VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage Voltage[3] Min. Max. 2.4 7C109B-15 7C1009B-15 Min. 7C109B-20 7C1009B-20 Max. Min. 2.4 0.4 Max. 2.4 0.4 Unit V 0.4 V 2.2 VCC + 0.3 2.2 VCC + 0.3 2.2 VCC + 0.3 V –0.3 0.8 –0.3 0.8 –0.3 0.8 V VIL Input LOW IIX Input Leakage Current GND < VI < VCC –1 +1 –1 +1 –1 +1 µA IOZ Output Leakage Current GND < VI < VCC, Output Disabled –5 +5 –5 +5 –5 +5 µA ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC ISB1 Automatic CE Max. VCC, CE1 > VIH Power-Down Current or CE2 < VIL,VIN > VIH or VIN < VIL, f = fMAX —TTL Inputs Automatic CE Max. VCC, Power-Down Current CE1 > VCC – 0.3V, L —CMOS Inputs or CE2 < 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 ISB2 90 80 75 mA 45 40 30 mA 10 10 10 mA 2 mA Capacitance[4] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. Unit 9 pF 8 pF Notes: 3. Minimum voltage is–2.0V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05038 Rev. *C Page 2 of 10 [+] Feedback CY7C109B CY7C1009B AC Test Loads and Waveforms ALL INPUT PULSES R1 480Ω R1 480Ω 5V 3.0V 5V OUTPUT 90% OUTPUT 30 pF R2 255Ω INCLUDING JIG AND SCOPE (a) R2 255Ω 5 pF 90% 10% 10% GND ≤ 3 ns INCLUDING JIG AND SCOPE (b) ≤ 3 ns THÉVENIN EQUIVALENT 167Ω 1.73V OUTPUT Equivalent to: Switching Characteristics[5] Parameter Description 7C109B-12 7C1009B-12 7C109B-15 7C1009B-15 7C109B-20 7C1009B-20 Min. Min. Min. Max. Max. Max. Unit Read Cycle tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE1 LOW to Data Valid, CE2 HIGH to Data Valid 12 15 20 ns tDOE OE LOW to Data Valid 6 7 8 ns tLZOE OE LOW to Low Z tHZOE OE HIGH to High Z[6, 7] tLZCE 12 15 12 3 CE1 LOW to Low Z, CE2 HIGH to Low 15 3 0 3 Z[6, 7] tHZCE CE1 HIGH to High Z, CE2 LOW to High tPU CE1 LOW to Power-Up, CE2 HIGH to Power-Up tPD CE1 HIGH to Power-Down, CE2 LOW to Power-Down 3 0 12 ns 8 7 ns ns 8 ns 20 ns 0 15 ns ns 0 3 0 20 7 6 ns 3 0 6 Z[7] 20 ns Write Cycle[8] tWC Write Cycle Time[9] 12 15 20 ns tSCE CE1 LOW to Write End, CE2 HIGH to Write End 10 12 15 ns tAW Address Set-Up to Write End 10 12 15 ns tHA Address Hold from Write End 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 ns tPWE WE Pulse Width 10 12 12 ns tSD Data Set-Up to Write End 7 8 10 ns tHD Data Hold from Write End 0 0 0 ns 3 3 3 ns tLZWE tHZWE [7] WE HIGH to Low Z [6, 7] WE LOW to High Z 6 7 8 ns Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. The internal write time of the memory is defined by the overlap of CE1 LOW, CE2 HIGH, and WE LOW. CE1 and WE must be LOW and CE2 HIGH to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05038 Rev. *C Page 3 of 10 [+] Feedback CY7C109B CY7C1009B Data Retention Characteristics Over the Operating Range (Low Power version only) Parameter Description Conditions VDR VCC for Data Retention ICCDR Data Retention Current tCDR Chip Deselect to Data Retention Time tR Operation Recovery Time Min. No input may exceed VCC + 0.5V VCC = VDR = 2.0V, CE1 > VCC – 0.3V or CE2 < 0.3V, VIN > VCC – 0.3V or VIN < 0.3V Max. 2.0 Unit V 150 µA 0 ns 200 µs Data Retention Waveform DATA RETENTION MODE VCC 4.5V 4.5V VDR > 2V tR tCDR CE Switching Waveforms Read Cycle No. 1[10, 11] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[11, 12] ADDRESS tRC CE1 CE2 tACE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZCE HIGH IMPEDANCE DATA VALID tPD tPU 50% ICC 50% ISB Notes: 10. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH. Document #: 38-05038 Rev. *C Page 4 of 10 [+] Feedback CY7C109B CY7C1009B Switching Waveforms (continued) Write Cycle No. 1 (CE1 or CE2 Controlled)[13, 14] tWC ADDRESS tSCE CE1 tSA CE2 tSCE tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[13, 14] tWC ADDRESS tSCE CE1 CE2 tSCE tAW tSA tHA tPWE WE OE tSD DATA I/O tHD DATAIN VALID NOTE 15 tHZOE Notes: 13. Data I/O is high impedance if OE = VIH. 14. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state. 15. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05038 Rev. *C Page 5 of 10 [+] Feedback CY7C109B CY7C1009B Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[14] tWC ADDRESS tSCE CE1 CE2 tSCE tAW tHA tSA tPWE WE tSD NOTE 15 DATA I/O tHD DATA VALID tLZWE tHZWE Truth Table CE1 CE2 OE WE H X X X High Z Power-Down Standby (ISB) X L X X High Z Power-Down Standby (ISB) L H L H Data Out Read Active (ICC) L H X L Data In Write Active (ICC) L H H H High Z Selected, Outputs Disabled Active (ICC) Document #: 38-05038 Rev. *C I/O0–I/O7 Mode Power Page 6 of 10 [+] Feedback CY7C109B CY7C1009B Ordering Information Speed (ns) 12 Ordering Code Package Diagram CY7C109B-12VC 51-85033 32-pin (400-Mil) Molded SOJ CY7C1009B-12VC 51-85041 32-pin (300-Mil) Molded SOJ CY7C109B-12ZC 51-85056 32-pin TSOP Type I 51-85033 32-pin (400-Mil) Molded SOJ CY7C109B-12ZXC 15 CY7C109BL-15VC 32-pin (400-Mil) Molded SOJ CY7C109B-15VXC 32-pin (400-Mil) Molded SOJ (Pb-Free) 51-85041 CY7C1009B-15VXC CY7C109B-15ZC Operating Range Commercial 32-pin TSOP Type I (Pb-Free) CY7C109B-15VC CY7C1009B-15VC Commercial 32-pin (300-Mil) Molded SOJ 32-pin (300-Mil) Molded SOJ (Pb-Free) 51-85056 CY7C109B-15ZXC 20 Package Type 32-pin TSOP Type I 32-pin TSOP Type I (Pb-Free) CY7C109B-15VI 51-85033 32-pin (400-Mil) Molded SOJ CY7C1009B-15VI 51-85041 32-pin (300-Mil) Molded SOJ CY7C109B-20ZC 51-85056 32-pin TSOP Type I CY7C1009B-20VC 51-85041 32-pin (300-Mil) Molded SOJ CY7C109B-20VI 51-85033 32-pin (400-Mil) Molded SOJ Industrial Commercial Industrial Please contact local sales representative regarding availability of parts Package Diagrams 32-pin (300-Mil) Molded (51-85041) 51-85041-*A Document #: 38-05038 Rev. *C Page 7 of 10 [+] Feedback CY7C109B CY7C1009B Package Diagrams (continued) 32-pin (400-Mil) Molded SOJ (51-85033) 51-85033-*B Document #: 38-05038 Rev. *C Page 8 of 10 [+] Feedback CY7C109B CY7C1009B Package Diagrams (continued) 32-pin TSOP Type I (8 x 20 mm) (51-85056) 51-85056-*D All product and company names mentioned in this document may be the trademarks of their respective holders Document #: 38-05038 Rev. *C Page 9 of 10 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] Feedback CY7C109B CY7C1009B Document History Page Document Title: CY7C109B/CY7C1009B 128K x 8 Static RAM Document Number: 38-05038 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 106832 09/22/01 SZV Change from Spec number: 38-00971 to 38-05038 *A 116467 09/16/02 CEA Added applications foot note to data sheet, page 1 *B 397875 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Updated the Ordering Information Table on page 7 *C 493543 See ECN NXR Removed 25 ns and 35 ns speed bin from product offering Added note# 2 on page# 1 Changed the description of IIX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Removed IOS parameter from DC Electrical Characteristics table Updated the Ordering Information Table Document #: 38-05038 Rev. *C Page 10 of 10 [+] Feedback