DB2U309 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB27309 in USSMini2 type package Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 12 Packaging DB2U30900L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 100 mA Peak forward current IFM 200 mA Non-repetitive peak forward surge current *1 IFSM 1 A Tj 125 °C Operating ambient temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Junction temperature 1: Cathode 2: Anode Panasonic JEITA Code USSMini2-F2-B SC-116A SOD-923 Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 10 mA 0.44 VF2 IF = 100 mA 0.58 IR1 VR = 10 V 0.3 IR2 VR = 30 V 2.0 Terminal capacitance Ct VR = 10 V, f = 1 MHz 3.0 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω 1.3 ns Forward voltage Reverse current V µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2013 VR Ver. CED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA 1 DB2U309 DB2U309_ IR-VR DB2U309_ IF-VF 1 10−3 Pulse test 10−6 10−3 25°C 10−7 100°C 10−8 85°C −40°C 10−9 25°C 10−4 85°C Reverse current IR (A) Forward current IF (A) Ta = 125°C Ta = 25°C 100°C Ta = 125°C 10−5 10−2 Ct VR 20 10−4 10−1 DB2U309_Ct-VR IR VR Terminal capacitance Ct (pF) IF VF 15 10 5 10−10 10−5 −40°C 0 0.2 0.4 Forward voltage VF (V) 0.6 10−11 0 10 20 30 Reverse voltage VR (V) Ver. CED 40 0 0 10 20 30 Reverse voltage VR (V) 2 DB2U309 USSMini2-F2-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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