PANASONIC DB2U309

DB2U309
Silicon epitaxial planar type
Unit: mm
For high speed switching circuits
DB27309 in USSMini2 type package
 Features
 Small reverse current IR
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Marking Symbol: 12
 Packaging
DB2U30900L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Forward current (Average)
IF(AV)
100
mA
Peak forward current
IFM
200
mA
Non-repetitive peak forward surge current *1
IFSM
1
A
Tj
125
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Reverse voltage
Junction temperature
1: Cathode
2: Anode
Panasonic
JEITA
Code
USSMini2-F2-B
SC-116A
SOD-923
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VF1
IF = 10 mA
0.44
VF2
IF = 100 mA
0.58
IR1
VR = 10 V
0.3
IR2
VR = 30 V
2.0
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
3.0
pF
Reverse recovery time *1
trr
IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω
1.3
ns
Forward voltage
Reverse current
V
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2013
VR
Ver. CED
t
IF
trr
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
IF = 100 mA
IR = 100 mA
RL = 100 Ω
t
Irr = 10 mA
1
DB2U309
DB2U309_ IR-VR
DB2U309_ IF-VF
1
10−3
Pulse test
10−6
10−3
25°C
10−7
100°C
10−8
85°C
−40°C
10−9
25°C
10−4
85°C
Reverse current IR (A)
Forward current IF (A)
Ta = 125°C
Ta = 25°C
100°C
Ta = 125°C
10−5
10−2
Ct  VR
20
10−4
10−1
DB2U309_Ct-VR
IR  VR
Terminal capacitance Ct (pF)
IF  VF
15
10
5
10−10
10−5
−40°C
0
0.2
0.4
Forward voltage VF (V)
0.6
10−11
0
10
20
30
Reverse voltage VR (V)
Ver. CED
40
0
0
10
20
30
Reverse voltage VR (V)
2
DB2U309
USSMini2-F2-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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