Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=15A. unit : mm 1170 [DBA150] 7.2 6.35 4.5 2.4 0.8 26.5 max 18 9 11 14.4 26.5 max 25 max Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Recitified Current Symbol VRM IO Surge Forward Current Junction Temperature Storage Temperature Insulation Voltage IFSM Tj Tstg VIS Conditions Ta=40°C Ta=40°C, with a 270✕270✕3.0mm3 Cu fin 50Hz sine wave, 1 cycle DBA150C 200 ➝ ➝ ➝ ➝ ➝ ➝ DBA150G 600 4.5 15.0 200 150 --40 to +150 2 Unit V A A A °C °C kV Electrical Characteristics at Ta=25°C Parameter Symbol Forward Voltage Reverse Current Thermal Resistance VF IR Rth(j-c) Conditions min Ratings typ IF=7.5A✻ VR : At each VRM✻ Junction-Case max 1.05 10 2.3 Unit V µA °C/W Note : Tightening torque : 0.98N·m max. Note✻ : Per constituent element of bridge. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41000 GI IM / 52098 HA (KT) / 82595 GI (KOTO) 3019 TA, TS No.2222-1/2 DBA150 IO -- Ta 12 sis e, tiv 10 d in Ca pa ive l oa d d oa el tiv uc cit 8 6 No fin Resi stive 4 , ind Capa citive 2 uctiv e loa d load 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 ID01175 Surge Foward Current, IFSM -- A With fin 14 IFSM -- n 240 With a 270✕270✕3mm3 Cu fin Re Average Rectified Current, IO -- A 16 200 160 120 50H z 80 40 0 1.0 2 3 5 7 10 2 3 5 7 Number of Cycles at 50Hz, n 2 100 ID01176 IF -- VF 5 10 C 25° 0° C 2 Ta =1 5 Forward Current, IF -- A 3 7 5 3 2 1.0 0.4 0.6 0.8 1.0 Forward Voltage, VF -- V 1.2 1.4 ID01177 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2000. Specifications and information herein are subject to change without notice. PS No.2222-2/2