SANYO DBF250_10

DBF250
Ordering number : EN6567A
SANYO Semiconductors
DATA SHEET
DBF250
Diffused Junction Silicon Diode
25A Single-Phase Bridge Rectifier
Features
•
•
•
•
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=200, 600V.
Average output current : IO=25A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Symbol
Conditions
DBF250C
VRM
DBF250G
Unit
200
600
V
Tc=98°C, With heatsink
➝
25
A
Ta=25°C, Without heatsink
➝
3.5
A
50Hz sine 1cycle peak value
➝
350
A
➝
150
°C
➝
--40 to +150
°C
kV
Average Output Current
IO
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
Dilective Strength Voltage
Vdis
Terminals tc case, AC 1 minute
➝
2.5
Tightening Torque
TOR
( ): recommended value
➝
0.8(0.5)
N•m
Electrical Characteristics at Ta=25°C Per Constituent element of bridge.
Parameter
Forward Voltage
Symbol
VF
IR
Conditions
Ratings
min
typ
Unit
max
Thremal Resistance(Junction-Ambient)
Rth(j-a)
IF=12.5A
VR=At each VRM
Without heatsink
22
°C / W
Thremal Resistance(Junction-Case)
Rth(j-c)
With heatsink
1
°C / W
Thremal Resistance(Junction-Lead)
Rth(j-l)
Without heatsink
5
°C / W
Reverse Current
1.05
V
10
μA
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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83006RB MS IM TC-00000159 / 42800 GI IM No.6567-1/3
DBF250
Package Dimensions
Electrical Connection
unit : mm (typ)
1191A
30.0
4.6
3.6
11.0
20.0
5.0
3.2
2.2
2.7
17.5
4.0
2.5
0.7
1.0
+
10.0
7.5
7.5
IF -- VF
5
IO -- Ta
3
4
Average Output Current, IO -- A
10
7
5
3
150
1.0
7
5
25°C
°C
2
Tj=
Forward Current, IF -- A
2
3
3
Re
PCB
sis
tiv
el
2
oa
d
1
2
0
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Forward Voltage, VF -- V
Resistive load
Tc
20
15
10
5
90
100
110
120
130
140
Case Temperature, Tc -- °C
20
150
160
IT02102
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
IT02100
Average Forward Power Dissipation, PF -- W
Fin
Tc
25
0
80
0
1.2
IO -- Tc
30
Average Output Current, IO -- A
1.1
160
IT02101
PF -- IO
70
60
50
40
ve
e
Sin
30
wa
20
10
0
0
4
8
12
16
20
Average Output Current, IO -- A
24
28
IT02103
No.6567-2/3
DBF250
IFSM -- n
Surge Forward Current, IFSM -- A
400
300
50H
z
200
100
0
1.0
2
3
5
7
10
2
3
Number of Consective Applied Cycles at 50Hz, n
5
7
100
IT02104
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of August, 2006. Specifications and information herein are subject
to change without notice.
PS No.6567-3/3