DBF250 Ordering number : EN6567A SANYO Semiconductors DATA SHEET DBF250 Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Symbol Conditions DBF250C VRM DBF250G Unit 200 600 V Tc=98°C, With heatsink ➝ 25 A Ta=25°C, Without heatsink ➝ 3.5 A 50Hz sine 1cycle peak value ➝ 350 A ➝ 150 °C ➝ --40 to +150 °C kV Average Output Current IO Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Dilective Strength Voltage Vdis Terminals tc case, AC 1 minute ➝ 2.5 Tightening Torque TOR ( ): recommended value ➝ 0.8(0.5) N•m Electrical Characteristics at Ta=25°C Per Constituent element of bridge. Parameter Forward Voltage Symbol VF IR Conditions Ratings min typ Unit max Thremal Resistance(Junction-Ambient) Rth(j-a) IF=12.5A VR=At each VRM Without heatsink 22 °C / W Thremal Resistance(Junction-Case) Rth(j-c) With heatsink 1 °C / W Thremal Resistance(Junction-Lead) Rth(j-l) Without heatsink 5 °C / W Reverse Current 1.05 V 10 μA Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006RB MS IM TC-00000159 / 42800 GI IM No.6567-1/3 DBF250 Package Dimensions Electrical Connection unit : mm (typ) 1191A 30.0 4.6 3.6 11.0 20.0 5.0 3.2 2.2 2.7 17.5 4.0 2.5 0.7 1.0 + 10.0 7.5 7.5 IF -- VF 5 IO -- Ta 3 4 Average Output Current, IO -- A 10 7 5 3 150 1.0 7 5 25°C °C 2 Tj= Forward Current, IF -- A 2 3 3 Re PCB sis tiv el 2 oa d 1 2 0 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage, VF -- V Resistive load Tc 20 15 10 5 90 100 110 120 130 140 Case Temperature, Tc -- °C 20 150 160 IT02102 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT02100 Average Forward Power Dissipation, PF -- W Fin Tc 25 0 80 0 1.2 IO -- Tc 30 Average Output Current, IO -- A 1.1 160 IT02101 PF -- IO 70 60 50 40 ve e Sin 30 wa 20 10 0 0 4 8 12 16 20 Average Output Current, IO -- A 24 28 IT02103 No.6567-2/3 DBF250 IFSM -- n Surge Forward Current, IFSM -- A 400 300 50H z 200 100 0 1.0 2 3 5 7 10 2 3 Number of Consective Applied Cycles at 50Hz, n 5 7 100 IT02104 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No.6567-3/3