UNISONIC TECHNOLOGIES CO., LTD 15N65 Preliminary Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET 1 TO-247 DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 15N65 is universally applied in active power factor correction and high efficient switched mode power supplies. 1 TO-220F2 FEATURES * RDS(ON)=0.65Ω @ VGS=10V * Typically 23.6pF low CRSS * High switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N65L-TF2-T 15N65G-TF2-T 15N65L-T47-T 15N65G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220F2 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-481.d 15N65 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain to Source Voltage Gate to Source Voltage Avalanche Current (Note 2) RATINGS UNIT 650 V ±30 V 15 A 15 A Continuous Continuous Drain Current Pulsed (Note 2) 60 A 637 mJ Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) 25.0 mJ Peak Diode Recovery dv/dt (Note 4) 4.5 V/ns TO-220F2 38.5 Power Dissipation PD W TO-247 312 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F2 TO-247 TO-220F2 TO-247 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 40 3.3 0.4 UNIT °C/W °C/W 2 of 6 QW-R502-481.d 15N65 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA, TJ=25°C 650 Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=650V, VGS=0V Drain-Source Leakage Current IDSS VDS=520V, TC=125°C Forward VGS=+30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=520V, VGS=10V, Gate-Source Charge QGS ID=15A (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=325V, ID=15A, RG=21.7Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=15A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Drain current limited by maximum junction temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 10 +100 -100 V V/°C µA µA nA nA 4.0 0.65 V Ω 2380 3095 295 385 23.6 35.5 pF pF pF 48.5 14.0 21.2 65 125 105 65 nC nC nC ns ns ns ns 0.65 0.5 63.0 140 260 220 140 15 60 1.4 496 5.69 A A V ns μC 3 of 6 QW-R502-481.d 15N65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-481.d 15N65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS BVDSS BVDSS-VDD BVDSS IAS ID(t) VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-481.d 15N65 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-481.d