UTC-IC 15N65G-TF2-T

UNISONIC TECHNOLOGIES CO., LTD
15N65
Preliminary
Power MOSFET
15A, 650V N-CHANNEL
POWER MOSFET
1
TO-247
„
DESCRIPTION
The UTC 15N65 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 15N65 is universally applied in active power factor
correction and high efficient switched mode power supplies.
„
1
TO-220F2
FEATURES
* RDS(ON)=0.65Ω @ VGS=10V
* Typically 23.6pF low CRSS
* High switching speed
* Improved dv/dt capability
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N65L-TF2-T
15N65G-TF2-T
15N65L-T47-T
15N65G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220F2
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Avalanche Current (Note 2)
RATINGS
UNIT
650
V
±30
V
15
A
15
A
Continuous
Continuous Drain Current
Pulsed (Note 2)
60
A
637
mJ
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
25.0
mJ
Peak Diode Recovery dv/dt (Note 4)
4.5
V/ns
TO-220F2
38.5
Power Dissipation
PD
W
TO-247
312
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=5.23mH, IAS=15A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
„
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220F2
TO-247
TO-220F2
TO-247
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
40
3.3
0.4
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA, TJ=25°C
650
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
VDS=650V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=520V, TC=125°C
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=520V, VGS=10V,
Gate-Source Charge
QGS
ID=15A (Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=325V, ID=15A,
RG=21.7Ω (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =15A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=15A,
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Drain current limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
1
10
+100
-100
V
V/°C
µA
µA
nA
nA
4.0
0.65
V
Ω
2380 3095
295
385
23.6 35.5
pF
pF
pF
48.5
14.0
21.2
65
125
105
65
nC
nC
nC
ns
ns
ns
ns
0.65
0.5
63.0
140
260
220
140
15
60
1.4
496
5.69
A
A
V
ns
μC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
BVDSS
BVDSS-VDD
BVDSS
IAS
ID(t)
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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