UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 5N90 is universally applied in high efficiency switch mode power supply. FEATURES * RDS(ON) < 2.8Ω @ VGS=10V, ID=2.5A * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N90L-TA3-T 5N90G-TA3-T 5N90L-TF3-T 5N90G-TF3-T 5N90L-TF1T 5N90G-TF1T 5N90L-T2Q-T 5N90G-T2Q-T 5N90L-TQ2-T 5N90G-TQ2-T 5N90L-TQ2-R 5N90G-TQ2-R 5N90L-T3P-T 5N90G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-262 TO-263 TO-263 TO-3P Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube 1 of 6 QW-R502-499.H 5N90 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-499.H 5N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous ID 5 A Drain Current Pulsed (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 350 mJ Avalanche Energy Repetitive (Note 2) EAR 5.1 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220/TO-262/TO-263 125 Power Dissipation TO-220F/TO-220F1 PD 47 W TO-3P 240 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=28mH, IAS=5A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-262 Junction to Ambient TO-263 TO-3P TO-220/TO-262 TO-263 Junction to Case TO-220F/TO-220F1 TO-3P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 62.5 UNIT °C/W 40 1 θJC 3.66 0.52 °C/W 3 of 7 QW-R502-499.H 5N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=900V, VGS=0V Drain-Source Leakage Current IDSS VDS=720V, TC=125°C Forward VDS=0V ,VGS=30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A Forward Transconductance gFS VDS=50V, ID=2.5A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V, f=1.0MHz Output Capacitance COSS IG=3.3mA Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=120V, VGS=10V, ID=5A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=1A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =5A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=5.4A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1.0 10 100 100 -100 2.0 4.0 5.0 2.8 V V/°C µA µA nA nA V Ω S 1200 1550 110 145 13 17 pF pF pF 140 12 30 70 106 196 110 nC nC nC ns ns ns ns 160 90 140 220 130 5 12 1.4 610 5.26 A A V ns μC 4 of 7 QW-R502-499.H UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-499.H 5N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-499.H 5N90 TYPICAL CHARACTERISTICS Drain Current, ID (A) Body-Diode Continuous Current, IS (A) Drain Current, ID (µA) Drain Current, ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-499.H