DMMT2907A ADVANCE INFORMATION 60V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V ICM = -1A Peak Pulse Current General purpose NPN transistors ideally suited for low power amplification and switching applications Dual transistors in a single SOT26 package taking half the footprint of two equivalent transistors in SOT23 Epitaxial planar die construction “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating: Matte Tin Finish annealed over Copper leadframe Weight: 0.015 grams (approximate) C1 SOT26 C2 B2 B1 E1 Top View B1 C1 E2 E1 B2 C2 E2 Top View Pin-Out Device Symbol Ordering Information (Note 3) Product DMMT2907A-7 Notes: Marking 907 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 907 DMMT2907A Document Number: DS35106 Rev: 1 - 2 907 = Product Type Marking Code 1 of 7 www.diodes.com April 2011 © Diodes Incorporated DMMT2907A ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Symbol VCBO VCEO VEBO IC ICM Value -60 -60 -5 -600 -1 Unit V V V mA A Symbol Value 1.28 10.3 0.90 7.14 97 140 113 -55 to +150 Unit Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 5 & 6) PD (Notes 4 & 6) (Notes 5 & 6) (Notes 4 & 6) (Note 7) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note (4), except the device is measured at t ≤ 5 sec. 6. For a dual device with one active die. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). DMMT2907A Document Number: DS35106 Rev: 1 - 2 2 of 7 www.diodes.com April 2011 © Diodes Incorporated DMMT2907A 1 VCE(sat) Limited DC 100m 1s 100ms 10ms 1ms 25mm x 25mm 1oz Cu Tamb=25°C 100µs Single Pulse 10m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) Max Power Dissipation (W) -IC Collector Current (A) 1.0 25mm x 25mm 1oz Cu 0.8 0.6 0.4 0.2 0.0 0 20 25mm x 25mm 1oz Cu Tamb=25°C 120 100 80 D=0.5 60 40 D=0.2 Single Pulse D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 100 120 140 160 100 1k 25mm x 25mm 1oz Cu Tamb=25°C Single Pulse 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number: DS35106 Rev: 1 - 2 80 100 Pulse Width (s) DMMT2907A 60 Derating Curve Maximum Power (W) 140 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics Pulse Power Dissipation 3 of 7 www.diodes.com April 2011 © Diodes Incorporated DMMT2907A ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO -60 -60 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -10 -10 ±50 ±50 V V V nA μA nA nA 75 100 100 100 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 300 ⎯ -0.4 -1.6 -1.3 -2.6 ⎯ ⎯ 200 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5.2 16.3 307 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 21 5.5 15.3 200 160 40 Collector-Base Cutoff Current ICBO Collector-Emitter Cutoff Current Base-Emitter Cutoff Current ON CHARACTERISTICS (Note 8) ICEV IBEV DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: Cobo Cibo fT ton td tr toff ts tf ⎯ V V pF pF MHz ns ns ns ns ns ns Test Condition IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 150°C VCE = -30V, VBE = ±0.25V VCE = -30V, VBE = ±0.25V IC = -100μA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0mA VEB = -2.0V, f = 1.0MHz, IC = 0mA VCE = -2V, IC = -10mA, f = 100MHz VCC = -30V IC = -150mA, IB1 = -15mA VCC = -6V IC = -150mA, IB1 = IB2 = -15mA 8. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. DMMT2907A Document Number: DS35106 Rev: 1 - 2 4 of 7 www.diodes.com April 2011 © Diodes Incorporated DMMT2907A 250 200 - VCE(sat) (V) Typical Gain (hFE) VCE=5V 125°C 25°C 150 -40°C 100 50 0 1m 10m 100m 1 1.0 0.9 IC/IB=10 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10m 125°C 25°C -40°C 100m - IC Collector Current (A) - IC Collector Current (A) VCE(sat) v IC hFE v IC 1.2 IC/IB=10 1.2 VCE=5V 1.0 0.8 - VBE(on) (V) - VBE(sat) (V) 1.0 -40°C 25°C 0.6 0.8 -40°C 25°C 0.6 125°C 125°C 0.4 1m 10m 100m 0.4 1m 1 - IC Collector Current (A) 10m 100m VBE(on) v IC 30 10 VCB = 35V Capacitance (pF) f = 1MHz 1 0.1 0.01 25 1 - IC Collector Current (A) VBE(sat) v IC - ICBO Collector Current (nA) ADVANCE INFORMATION Typical Electrical Characteristics 50 75 100 125 20 Cibo 10 Cobo 0 10m TA Ambient Temperature (°C) ICBO v TA DMMT2907A Document Number: DS35106 Rev: 1 - 2 5 of 7 www.diodes.com 100m 1 10 100 - Voltage(V) Capacitance v Voltage April 2011 © Diodes Incorporated DMMT2907A Package Outline Dimensions ADVANCE INFORMATION A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMMT2907A Document Number: DS35106 Rev: 1 - 2 6 of 7 www.diodes.com April 2011 © Diodes Incorporated DMMT2907A IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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