DIODES 2DB1188R-13

2DB1188P/Q/R
40V PNP SURFACE MOUNT TRANSISTOR IN SOT89
Features
Mechanical Data
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•
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•
•
•
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Complementary NPN Type Available (2DD1766)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT89
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
SOT89
C
B
E
Top View
Device Schematic
Pin Out - Top view
Ordering Information (Note 3)
Product
2DB1188P-13
2DB1188Q-13
2DB1188R-13
Notes:
Marking
P23P
P23Q
P23R
Reel size (inches)
13
13
13
Tape width (mm)
12
12
12
Quantity per reel
2,500
2,500
2,500
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P23x = Product Type Marking Code
Where P23P = 2DB1188P
P23Q = 2DB1188Q
P23R = 2DB1188R
= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 1 = 2011)
WW = Week Code (01 – 53)
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
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November 2011
© Diodes Incorporated
2DB1188P/Q/R
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-40
-32
-5
-2
-3
Unit
V
V
V
A
A
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
TJ, TSTG
4. Device mounted on 15mm X 15mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
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November 2011
© Diodes Incorporated
2DB1188P/Q/R
VCE(sat)
1
Max Power Dissipation (W)
-IC Collector Current (A)
Thermal Characteristics
Limited
DC
1s
100ms
100m
10ms
1ms
15x15mm 1oz
Single Pulse
Tamb=25°C
10m
100m
100µs
1
10
-VCE Collector-Emitter Voltage (V)
1.0
15x15mm 1oz
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
T amb=25°C
Maximum Power (W)
Thermal Resistance (°C/W)
100
120 15x15mm 1oz
100
80
D=0.5
60
40 D=0.2
Single Pulse
20
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
15x15mm 1oz
Single Pulse
Tamb=25°C
10
1
100µ
10m 100m
10
100
1k
Pulse Power Dissipation
3
Tamb=25°C
120.0
100.0
80.0
1oz copper
60.0
2oz copper
500
1000
1500
2000
Copper Area (sqmm)
2500
Maximum Power (W)
140.0
40.0
0
1
Pulse Width (s)
Transient Thermal Impedance
Thermal Resistance (°C/W)
1m
Pulse Width (s)
2oz copper
2
1oz copper
1
Tamb=25°C
0
0
Document number: DS31144 Rev. 5 - 2
1000
1500
2000
Copper Area (sqmm)
2500
PD vs Area
RTH vs Area
2DB1188P/Q/R
500
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
-40
-32
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
-1
V
V
V
μA
μA
IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -20V, IE = 0
VEB = - 4V, IC = 0
VCE(sat)
⎯
82
120
180
-0.35
-0.8
180
270
390
V
IC = -2A, IB = -0.2A
⎯
VCE = -3V, IC = -0.5A
fT
⎯
120
⎯
MHz
Cobo
⎯
20
⎯
pF
2DB1188P
2DB1188Q
2DB1188R
DC Current Gain
hFE
⎯
Test Condition
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
VCE = -5V, IC = -0.1A,
f = 30MHz
VCB = -10V, f = 1MHz
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Notes:
1.4
350
IB = -10mA
IB = -8mA
1.0
0.8
IB = -6mA
0.6
IB = -4mA
0.4
TA = 150°C
250
TA = 85°C
200
150
TA = 25°C
100
TA = -55°C
IB = -2mA
50
0.2
0
0
0.001
1
2
3
4
5
-VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0.6
IC/IB = 10
0.5
0.4
0.3
TA = 150°C
0.2
TA = 85°C
0.1
TA = 25°C
TA = -55°C
0
0.0001
-VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V)
0
-VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE = -3V
300
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
1.2
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
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0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain
vs. Collector Current (2DB1188Q)
10
1.2
VCE = -3V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
0.2
TA = 85°C
TA = 150°C
0
0.0001
0.001
0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
November 2011
© Diodes Incorporated
60
1.2
Cobo, OUTPUT CAPACITANCE (pF)
-VBE(SAT), BASE EMITTER SATURATION VOLTAGE(V)
2DB1188P/Q/R
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2
TA = 150°C
IC/IB = 10
50
f = 1MHz
40
30
20
10
0
0.01
0
0.0001
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Output Capacitance Characteristics
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
fT, GAIN-BANDWIDTH PRODUCT (MHz)
140
120
100
80
60
40
20
0
0
10
20
30 40 50 60 70 80 90 100
IE, Emitter Current (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Emitter Current
Package Outline Dimensions
R0
D1
.2
00
C
E
H
L
B
e
B1
e1
8°
(4 X
)
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1
1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
D
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
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November 2011
© Diodes Incorporated
2DB1188P/Q/R
Suggested Pad Layout
X1
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
X2 (2x)
Y1
Y3
Y4
Y2
Y
C
X (3x)
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2DB1188P/Q/R
Document number: DS31144 Rev. 5 - 2
6 of 6
www.diodes.com
November 2011
© Diodes Incorporated