DIODES 2DB1184Q_11

2DB1184Q
50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L
Features
Mechanical Data
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•
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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•
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Case: TO252-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.34 grams (approximate)
TO252-3L
C
B
E
Device Schematic
Top View
Pin Out Configuration
Top view
Ordering Information (Note 3)
Notes:
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
2DB1184Q-13
2DB1184Q
13
16
2,500
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
2DB1184Q
2DB1184Q
Document number: DS31504 Rev. 4 - 2
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code 01-52
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2DB1184Q
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-60
-50
-5
-3
-4.5
Unit
V
V
V
A
A
Value
15
8.3
1.2
104
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Case
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB with minimum pad size recommended.
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes:
Symbol
PD
RθJC
PD
RθJA
TJ, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
-60
-50
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
-1
V
V
V
μA
μA
IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -40V, IE = 0
VEB = - 4V, IC = 0
VCE(sat)
VBE(sat)
hFE
⎯
⎯
120
⎯
⎯
⎯
-1
-1.2
270
V
V
⎯
IC = -2A, IB = -0.2A
IC = -1.5A, IB = -0.15A
VCE = -3V, IC = -0.5A
fT
⎯
110
⎯
MHz
Cobo
⎯
26
⎯
pF
VCE = -5V, IC = -0.1A,
f = 30MHz
VCB = -10V, f = 1MHz
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1184Q
Document number: DS31504 Rev. 4 - 2
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2DB1184Q
1,000
400
VCE = -3V
800
IB = -5mA
IB = -4mA
600
IB = -3mA
400
IB = -2mA
TA = 150°C
300
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (mA)
350
TA = 125°C
250
T A = 85°C
200
TA = 25°C
150
100
200
TA = -55°C
IB = -1mA
50
0
0.001
0
0.1
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.4
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
0.3
0.2
TA = 150°C
TA = 125°C
0.1
T A = 85°C
TA = 25°C
T A = -55°C
0
0.001
1.2
VCE = -3V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
TA = 125°C
0.2
TA = 150°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
1.2
f = 1MHz
IC/IB = 10
1.0
0.8
CAPACITANCE (pF)
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
10
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
T A = -55°C
TA = 25°C
0.6
TA = 85°C
T A = 125°C
0.4
TA = 150°C
Cibo
100
Cobo
0.2
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1184Q
Document number: DS31504 Rev. 4 - 2
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10
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
June 2011
© Diodes Incorporated
2DB1184Q
140
10
VCE = -5V
f = 30MHz
IC, COLLECTOR CURRENT (A)
fT, GAIN-BANDWIDTH PRODUCT (MHz)
Pw = 100µs (mA)
120
100
80
60
40
Pw = 100ms (mA)
1
Pw = 10ms (mA)
Pw = 1ms (mA)
DC (mA)
0.1
20
TA = 25°C
Single Non-repetitive Pulse
0.01
0
0
10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
0.1
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 8 Safe Operating Area (Note 3)
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 110°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
T J - T A = P * R θJA(t)
Duty Cycle, D = t1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 9 Transient Thermal Response
2DB1184Q
Document number: DS31504 Rev. 4 - 2
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2DB1184Q
Package Outline Dimensions
E
b3
L3
D
b2
L4
e
b
A1
A
H
a
SEATING
PLANE
L
C2
TO252-3L
Dim Min Typ
Max
A
2.19 2.29
2.39
A1
0.97 1.07
1.17
b
0.64 0.76
0.88
b2
0.76 0.95
1.14
b3
5.21 5.33
5.50
C2
0.45 0.51
0.58
D
6.00 6.10
6.20
E
6.45 6.58
6.70
e
2.286 Typ.
H
9.40 9.91 10.41
L
1.40 1.59
1.78
L3
0.88 1.08
1.27
L4
0.64 0.83
1.02
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Y2
C
Z
Y1
X1
2DB1184Q
Document number: DS31504 Rev. 4 - 2
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
E1
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2DB1184Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2DB1184Q
Document number: DS31504 Rev. 4 - 2
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June 2011
© Diodes Incorporated