A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 60V 100mΩ @ VGS= 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance • Fast switching speed • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: TO252-3L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Motor Control • Terminals Connections: See Diagram • Transformer Driving Switch • • DC-DC Converters Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Power Management Functions • Weight: 0.33 grams (approximate) • Uninterrupted Power Supply D D TO252-3L G D G TOP VIEW Ordering Information Product DMN6068LK3-13 Note: S S PIN OUT -TOP Equivalent Circuit (Note 1) Marking N6068L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. about Marking Information YYWW N6068L DMN6068LK3 Document Number DS32057 Rev 2 - 2 = Manufacturer’s Marking N6068L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source voltage Gate-Source voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) (Note 8) (Note 8) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5) Symbol VDSS VGS EAS IAS ID IDM IS ISM Value 60 ±20 37.5 5.0 8.5 6.8 6.0 22.2 10.2 22.2 Unit V V mJ A Value 4.12 33 8.49 67.9 2.12 16.9 30.3 14.7 59.0 3.09 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 3) Power dissipation Linear derating factor (Note 4) PD (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 3) (Note 4) (Note 6) (Note 7) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note 2, except the device is measured at t ≤ 10 sec. 5. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 8. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = 25°C DMN6068LK3 Document Number DS32057 Rev 2 - 2 2 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Thermal Characteristics RDS(on) 10 Limited 1 DC ID Drain Current (A) ID Drain Current (A) RDS(on) 1s 100ms 10ms Tamb=25°C 100m 100µs 1 DC 1 1s 100ms 10ms Tamb=25°C 100m 1ms 25mm x 25mm 1oz FR4 10 Limited 1ms 50mm x 50mm 2oz FR4 10 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area Tamb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 35 60 Transient Thermal Impedance T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 D=0.1 D=0.2 10 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 100 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse Tamb=25°C 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMN6068LK3 Document Number DS32057 Rev 2 - 2 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.068 VGS= 10V, ID= 12A Static Drain-Source On-Resistance (Note 9) RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 9 & 10) gfs ⎯ 19.7 ⎯ S VDS= 15V, ID= 12A Diode Forward Voltage (Note 9) VSD ⎯ 0.98 1.15 V IS= 12A, VGS= 0V Reverse recovery time (Note 10) trr 145 ⎯ ns Reverse recovery charge (Note 10) Qrr ⎯ 929 ⎯ nC Input Capacitance Ciss ⎯ 502 ⎯ pF Output Capacitance Coss ⎯ 45.7 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 27.1 ⎯ pF Total Gate Charge Qg ⎯ 5.55 ⎯ nC 0.100 Ω VGS= 4.5V, ID= 6A IS= 12A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 10) Total Gate Charge Qg ⎯ 10.3 ⎯ nC Gate-Source Charge Qgs ⎯ 1.6 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.5 ⎯ nC tD(on) ⎯ 3.6 ⎯ ns Turn-On Rise Time (Note 11) tr ⎯ 10.8 ⎯ ns Turn-Off Delay Time (Note 11) tD(off) ⎯ 11.9 ⎯ ns tf ⎯ 8.7 ⎯ ns Turn-On Delay Time (Note 11) Turn-Off Fall Time (Note 11) Notes: VDS= 30V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 12A VDD= 30V, VGS= 10V ID= 12A, RG ≅ 6.0Ω 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. DMN6068LK3 Document Number DS32057 Rev 2 - 2 4 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Typical Characteristics 10V T = 150°C 5V 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 1 3.5V VGS 0.1 3V 0.01 3.5V 1 2.5V VGS 2V 1 10 0.1 T = 150°C T = 25°C 0.01 1E-3 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1 1 10 Output Characteristics VDS = 10V 0.1 1 VDS Drain-Source Voltage (V) Output Characteristics 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 VGS(th) 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 3.5V 10 4V 1 4.5V 5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6068LK3 Document Number DS32057 Rev 2 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) 3V 0.1 VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) 4.5V 4V 10 0.01 0.1 10 10V 10 T = 150°C 1 T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Typical Characteristics - continued 600 VGS Gate-Source Voltage (V) C Capacitance (pF) 10 VGS = 0V f = 1MHz CISS 400 COSS CRSS 200 0 0.1 1 10 8 6 4 0 VDS - Drain - Source Voltage (V) ID = 12A 0 2 4 6 8 10 Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge 40 20 Starting T J = 25°C 15 30 10 20 5 10 100µ 1m EAS Avalanche Energy (mJ) IAS Avalanche Current (A) VDS = 30V 2 L Inductor (H) Single-Pulsed Avalanche Rating DMN6068LK3 Document Number DS32057 Rev 2 - 2 6 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN6068LK3 Document Number DS32057 Rev 2 - 2 Switching time test circuit 7 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Millimeters Min Max Min Max Max Min A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC 0.090 BSC Max 2.29 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN6068LK3 Document Number DS32057 Rev 2 - 2 8 of 9 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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