DSS4240T LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS5240T) Lead Free By Design/RoHS Compliant (Note 1) “Green” Device (Note 2) • • NEW PRODUCT • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Peak Base Current Symbol VCBO VCEO VEBO ICM IC IBM Value 40 40 5 3 2 0.3 Unit V V V A A A Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DSS4240T Document number: DS31623 Rev. 3 - 2 1 of 5 www.diodes.com May 2009 © Diodes Incorporated DSS4240T Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 40 40 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 V V V nA μA nA ⎯ ⎯ ⎯ ⎯ ⎯ 30 ⎯ ⎯ ⎯ 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 70 100 180 180 320 200 1.1 0.75 mΩ V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) IEBO Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(SAT) VBE(SAT) VBE(ON) 350 300 300 150 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 100 ⎯ ⎯ MHz Output Capacitance Cob ⎯ ⎯ 20 pF DC Current Gain hFE ⎯ mV Test Conditions IC = 100μA IC = 10mA IE = 100μA VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150°C VEB = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 750mA, IB = 15mA IC = 1A, IB = 50mA IC = 2A, IB = 200mA IC = 500mA, IB = 50mA IC = 2A, IB = 200mA VCE = 2V, IC = 100mA VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 800 2.0 700 1.8 IB = 5mA 1.6 IB = 4mA IC, COLLECTOR CURRENT (A) Notes: PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage 600 500 400 300 200 RθJA = 209°C/W 100 1.4 IB = 3mA 1.2 1.0 IB = 2mA 0.8 0.6 IB = 1mA 0.4 0.2 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DSS4240T Document number: DS31623 Rev. 3 - 2 2 of 5 www.diodes.com 0 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage May 2009 © Diodes Incorporated DSS4240T 1,000 1 TA = 150°C IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) T A = 85°C hFE, DC CURRENT GAIN T A = -55°C 100 VCE = 2V 10 0.001 VCE = 2V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C T A = 150°C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current TA = 25°C TA = -55°C 0.01 1.2 IC/IB = 10 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 f = 1MHz 100 Cibo 10 Cobo 1 TA = 150°C TA = 85°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 0.1 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current CAPACITANCE (pF) NEW PRODUCT T A = 25°C 100 10 VCE = 10V f = 100MHz 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS4240T Document number: DS31623 Rev. 3 - 2 3 of 5 www.diodes.com 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current May 2009 © Diodes Incorporated DSS4240T Ordering Information (Note 6) Part Number DSS4240T-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ZN2 Date Code Key Year Code Month Code 2008 V 2009 W Jan 1 Feb 2 YM NEW PRODUCT Marking Information 2010 X Mar 3 Apr 4 ZN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DSS4240T Document number: DS31623 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com May 2009 © Diodes Incorporated DSS4240T IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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