DSL12AW Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra Small Surface Mount Package Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) 1, 2, 5, 6 6 5 4 4 1 2 3 3 Top View Device Schematic Top View Top View Pin Out Configuration Ordering Information Part Number DSL12AW-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com Marking Information ZPB Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DSL12AW Document Number: DS31644 Rev. 2 - 2 Mar 3 YM ADVANCE INFORMATION 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR 2010 X Apr 4 ZPB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 1 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D February 2011 © Diodes Incorporated DSL12AW Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Value -12 -12 -5 -2 -3 Unit V V V A A Symbol PD RθJA PD RθJA TJ, TSTG Value 450 275 650 192 -55 to +150 Unit mW °C/W mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Device mounted on FR-4 PCB, mounted on 25mmx25mm square pad 1oz coverage of copper 0.8 10 IC, COLLECTOR CURRENT (A) Pw = 100µs PD, POWER DISSIPATION (W) 0.6 0.4 Note 4 Note 3 0.2 1 0.1 0.01 0.001 0.1 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 188°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 3 Transient Thermal Response DSL12AW Document Number: DS31644 Rev. 2 - 2 2 of 6 www.diodes.com February 2011 © Diodes Incorporated DSL12AW Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 5) Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO ICES IEBO -12 -12 -5 ⎯ ⎯ ⎯ -35 -20 -8.3 -1 -1 -1 ⎯ ⎯ ⎯ -100 -100 -100 V V V nA nA nA hFE 100 100 100 175 165 160 ⎯ 300 ⎯ V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -70 -95 -115 -160 -235 -290 mV ⎯ ⎯ ⎯ ⎯ 180 290 -0.95 -0.95 65 ⎯ mΩ V V pF MHz Collector-Emitter Saturation Voltage (Note 5) VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Output Capacitance Current Gain-Bandwidth Product RCE(sat) VBE(sat) VBE(on) Cobo fT Test Condition IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -12V, IE = 0 VCE = -12V, VBE = 0 VEB = -5V, IC = 0 VCE = -1.5V, IC = -0.5A VCE = -1.5V, IC = -0.8A VCE = -1.5V, IC = -1A IC = -0.5A, IB = -10mA IC = -0.8A, IB = -16mA IC = -1A, IB = -20mA IC = -1A, IB = -20mA IC = -1A, IB = -20mA VCE = -1.5V, IC = -1A VCB = -1.5V, f = 1.0MHz VCE = -5V, IC = -100mA, f = 100MHz 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1.6 500 1.4 450 400 IB = 5mA 1.2 hFE, DC CURRENT GAIN Notes: IC, COLLECTOR CURRENT (A) ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified IB = 4mA 1.0 IB = 3mA 0.8 0.6 IB = 2mA 0.4 350 TA = 125°C 300 TA = 85°C 250 200 0.2 0 2 4 6 8 10 12 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage Document Number: DS31644 Rev. 2 - 2 TA = -55°C 50 0 DSL12AW TA = 25°C 150 100 IB = 1mA VCE = -1.5V TA = 150°C 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current February 2011 © Diodes Incorporated DSL12AW 500 0.14 450 VCE = -1V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.12 hFE, DC CURRENT GAIN T A = 150°C 350 300 TA = 85°C 250 T A = 25°C 200 150 100 T A = -55°C IC/IB = 10 0.10 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 50 0 0.001 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = -5V 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.2 T A = 125°C 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 Typical DC Current Gain vs. Collector Current 1.4 IC/IB = 10 1.2 1.0 0.8 TA = -55°C T A = 25°C 0.6 TA = 85°C 0.4 TA = 150°C TA = 125°C 0.2 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 210 180 f = 1MHz 150 CAPACITANCE (pF) ADVANCE INFORMATION 400 120 90 Cibo 60 30 Cobo 0 0 2 4 6 8 10 VR, REVERSE VOLTAGE (V) Fig. 10 Typical Capacitance Characteristics DSL12AW Document Number: DS31644 Rev. 2 - 2 4 of 6 www.diodes.com February 2011 © Diodes Incorporated DSL12AW Package Outline Dimensions ADVANCE INFORMATION A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DSL12AW Document Number: DS31644 Rev. 2 - 2 5 of 6 www.diodes.com February 2011 © Diodes Incorporated DSL12AW IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com DSL12AW Document Number: DS31644 Rev. 2 - 2 6 of 6 www.diodes.com February 2011 © Diodes Incorporated