ELPIDA EDD1204ALTA

PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
128 M-bit Synchronous DRAM with Double Data Rate
(4-bank, SSTL_2)
Description
The EDD1204ALTA, EDD1208ALTA, EDD1216ALTA are high-speed 134,217,728 bits synchronous dynamic
random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 (word x bit x bank),
respectively.
The synchronous DRAMs use Double Data Rate (DDR) where data bandwidth is twice of regular synchronous
DRAM.
The synchronous DRAM is compatible with SSTL_2 (Stub Series terminated Logic for 2.5 V).
The synchronous DRAM is packaged in 66-pin Plastic TSOP (II).
Features
• Fully Synchronous Dynamic RAM with all input signals except DM, DQS and DQ referenced to a positive clock edge
• Double Data Rate interface
Differential CLK (/CLK) input
Data inputs and DM are synchronized with both edges of DQS
Data outputs and DQS are synchronized with a cross point of CLK and /CLK
• Quad internal banks operation
• Possible to assert random column address in every clock cycle
• Programmable Mode register set
/CAS latency (2, 2.5)
Burst length (2, 4, 8)
Wrap sequence (Sequential / Interleave)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• x4, x8, x16 organization
• Byte write control (x4, x8) by DM
• Byte write control (x16) by LDM and UDM
• 2.5 V ± 0.2 V Power supply for VDD
• 2.5 V ± 0.2 V Power supply for VDDQ
• Maximum clock frequency up to 133 MHz
• SSTL_2 compatible with all signals
• 4,096 refresh cycles/64 ms
• 66-pin Plastic TSOP (II) (10.16 mm (400))
• Burst termination by Precharge command and Burst stop command
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0136E30 (Ver. 3.0)
Date Published October 2001 (K)
Printed in Japan
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Ordering Information
Part Number
Organization
Clock frequency
(word x bit x bank)
MHz (MAX.)
8M x 4 x 4
133
66-pin Plastic TSOP (II)
EDD1204ALTA-75
133
(10.16 mm (400))
EDD1204ALTA-1A
100
EDD1204ALTA-7A
EDD1208ALTA-7A
4M x 8 x 4
133
EDD1208ALTA-75
133
EDD1208ALTA-1A
100
EDD1216ALTA-7A
2M x 16 x 4
133
EDD1216ALTA-75
133
EDD1216ALTA-1A
100
2
Preliminary Data Sheet E0136E30
Package
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Part Number
E D D 12 04 A L TA - 7A
ELPIDA Memory
Material Type
D: Mono
Function
D: DDR (I)
Density & Bank
12: 128M/4 Bank
Bit Organization
4: x4
8: x8
16: x16
Interface
A: SSTL_2
Mask Revision
Package
TA: TSOP (II)
Speed
7A: 7.5 ns (133 MHz)
75: 7.5 ns (133 MHz)
1A: 10 ns (100 MHz)
Preliminary Data Sheet E0136E30
3
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Pin Configurations
/xxx indicates active low signal.
[EDD1204ALTA]
66-pin Plastic TSOP (II) (10.16 mm (400))
8M word x 4 bit x 4 bank
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
A0 - A11
A0 - A11
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
: Address inputs
/CAS
: Column address strobe
: Row address inputs
/WE
: Write enable
DM
: DQ write mask enable
: Supply voltage
A0 - A9, A11 : Column address inputs
4
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
BA0, BA1
: Bank select
VDD
DQ0 - DQ3
: Data inputs/outputs
VSS
: Ground
DQS
: Data strobe
VDDQ
: Supply voltage for DQ and DQS
CLK, /CLK
: System clock input
VSSQ
: Ground for DQ and DQS
CKE
: Clock enable
VREF
: Input reference
/CS
: Chip select
NC
: No connection
/RAS
: Row address strobe
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
[EDD1208ALTA]
66-pin Plastic TSOP (II) (10.16 mm (400))
4M word x 8 bit x 4 bank
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CLK
CLK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
: Address inputs
/CAS
: Column address strobe
A0 - A11
: Row address inputs
/WE
: Write enable
A0 - A9
: Column address inputs
DM
: DQ write mask enable
BA0, BA1
: Bank select
VDD
: Supply voltage
DQ0 - DQ7
: Data inputs/outputs
VSS
: Ground
DQS
: Data strobe
VDDQ
: Supply voltage for DQ and DQS
CLK, /CLK
: System clock input
VSSQ
: Ground for DQ and DQS
CKE
: Clock enable
VREF
: Input reference
/CS
: Chip select
NC
: No connection
/RAS
: Row address strobe
A0 - A11
Preliminary Data Sheet E0136E30
5
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
[EDD1216ALTA]
66-pin Plastic TSOP (II) (10.16 mm (400))
2M word x 16bit x 4 bank
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CLK
CLK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
: Address inputs
/CAS
: Row address inputs
/WE
: Write enable
: Column address inputs
LDM, UDM
: DQ write mask enable
: Bank select
VDD
: Supply voltage
: Data inputs/outputs
VSS
: Ground
LDQS, UDQS : Data strobe
VDDQ
: Supply voltage for DQ, LDQS and UDQS
CLK, /CLK
: System clock input
VSSQ
: Ground for DQ, LDQS and UDQS
CKE
: Clock enable
VREF
: Input reference
/CS
: Chip select
NC
: No connection
/RAS
: Row address strobe
A0 - A11
A0 - A11
A0 - A8
BA0, BA1
DQ0 - DQ15
6
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Preliminary Data Sheet E0136E30
: Column address strobe
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Clock
Generator
Block Diagram
Bank D
Bank C
Bank B
A0 - A11, BA0, BA1
Mode
Register
Row
Address
Buffer
and
Refresh
Counter
Row Decoder
CLK
/CLK
CKE
Memory Cell Array
Bank A
Control Logic
/CS
/RAS
/CAS
/WE
Command Decoder
Sense Amp.
Column Decoder
Column
Address
Buffer
and
Burst
Counter
Data Control Circuit
Latch Circuit
CLK, /CLK
DLL
Input & Output Buffer
DQS
DM
DQ
Preliminary Data Sheet E0136E30
7
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
CONTENTS
1. Input/Output Pin Function....................................................................................................................................10
2. Commands ............................................................................................................................................................11
3. Simplified State Diagram......................................................................................................................................15
4. Truth Table ............................................................................................................................................................16
4.1 Command Truth Table...............................................................................................................................16
4.2 DM Truth Table ..........................................................................................................................................16
4.3 CKE Truth Table ........................................................................................................................................16
4.4 Operative Command Table
Note1
................................................................................................................17
4.5 Command Truth Table for CKE .................................................................................................................20
5. Initialization ...........................................................................................................................................................21
6. Programming the Mode Register.........................................................................................................................22
7. Mode Register .......................................................................................................................................................23
7.1 Burst Length and Sequence ......................................................................................................................24
8. Address Bits of Bank-Select and Precharge ......................................................................................................25
9. Precharge ..............................................................................................................................................................26
9.1 Read to Precharge Command Interval ......................................................................................................26
9.2 Write to Precharge Command Interval ......................................................................................................27
10. Auto Precharge ...................................................................................................................................................28
10.1 Read with Auto Precharge.......................................................................................................................28
10.2 Write with Auto Precharge.......................................................................................................................29
11. Read/Write Command Interval ...........................................................................................................................30
11.1 Read to Read Command Interval ............................................................................................................30
11.2 Write to Write Command Interval ............................................................................................................31
11.3 Write to Read Command Interval ............................................................................................................32
11.4 Read to Write Command Interval ............................................................................................................33
8
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
12. Burst Termination ...............................................................................................................................................34
12.1 Burst Stop Command in Read Cycle .......................................................................................................34
12.2 Terminating a Burst Read Cycle by Precharge Command ......................................................................35
12.3 Terminating a Burst Write Cycle by Precharge Command ......................................................................36
13. Electrical Specifications.....................................................................................................................................37
13.1 Absolute Maximum Ratings .....................................................................................................................37
13.2 Recommended Operating Conditions......................................................................................................37
13.3 Pin Capacitance (TA = 25 °C, f = 100 MHz) .............................................................................................37
13.4 DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted) ...........................38
13.5 DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted) ...........................39
13.6 AC Characteristics (Recommended Operating Conditions unless otherwise noted)...............................39
13.6.1 Test Conditions .........................................................................................................................39
13.6.2 Timing Diagram .........................................................................................................................40
13.6.3 Synchronous Characteristics.....................................................................................................41
13.6.4 Synchronous Characteristics Example......................................................................................42
13.6.5 Asynchronous Characteristics...................................................................................................42
14. Package Drawing ................................................................................................................................................74
15. Recommended Soldering Conditions ...............................................................................................................75
16. Revision History..................................................................................................................................................76
Preliminary Data Sheet E0136E30
9
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
1. Input/Output Pin Function
Pin name
CLK, /CLK
Input/Output
Input
Function
CLK and /CLK are the master clock inputs. The timing reference point for the differential
clock is when CLK and /CLK cross.
All control and address inputs except for DQ and DM are latched by a rising edge of CLK.
By both of rising and falling edges of CLK, output DQ and DQS are validated.
CKE
Input
CKE controls power down mode. When the EDD12xxALTA is not in burst mode and CKE
is negated, the device enters power down mode and deactivates internal clock signals,
input buffers and output drivers. During power down mode, CKE must remain low.
/CS
Input
/CS low starts a command input cycle. When /CS is high, commands are ignored but the
current operations will be continued.
/RAS, /CAS,
/WE
Input
As well as regular SDRAMs, each combination of /RAS, /CAS, and /WE input in
conjunction with /CS input at a rising edge of CLK determines SDRAM operation. Refer to
the command table.
A0 – A11
Input
Row address is determined by A0 - A11 at the rising edge of CLK in active command
cycle.
It does not depend on the bit organization.
Column address is determined by A0 - A9, A11 at the rising edge of CLK in read or write
command cycle. It depends on the bit organization: A0 - A9, A11 for x4 device, A0 - A9
for x8 device, A0 - A8 for x16 device.
A10 defines precharge mode. When A10 is high in precharge command cycle, all banks
are precharged; when A10 is low, only the bank selected by BA0 and BA1 is precharged.
When A10 is high in read or write command cycle, precharge starts automatically after the
burst access.
BA0, BA1
Input
BA0, BA1 are bank select signals. In command cycle, BA0 and BA1 low select Bank A,
BA0 high and BA1 low select bank B, BA0 low and BA1 high select bank C and then BA0
and BA1 high select bank D.
DQ0 – DQ15
Input/Output
DQ pins have the same function as I/O pins on conventional DRAMs.
DQS, LDQS,
UDQS
Input/Output
Active on the both edges for data input and output.
DM, LDM, UDM
Input
DM's are latched by both of rising and falling edges of the DQS. In write mode, DM's
control byte mask. Unlike regular SDRAMs, DM's do not control read operation.
VREF
Input
VREF is reference voltage for SSTL input buffers.
VDD, VDDQ, VSS,
VSSQ
(Power Supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply
pins for the output buffers.
10
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
2. Commands
Extended mode register set command
Fig.1 Extended mode register
set command
(/CS, /RAS, /CAS, /WE Low)
CLK
The EDD12xxALTA has an extended mode register that defines enabling or
disabling DLL. In this command, A0 through A11, BA0 and BA1 are the data
CKE
H
/CS
input pins.
After power on, the extended mode register set command must be executed for
/RAS
/CAS
enabling or disabling DLL.
The extended mode register can be set only when all banks are in idle state.
/WE
During tMRD, the EDD12xxALTA can not accept any other commands.
BA0
BA1
A10
Add
Mode register set command
Fig.2 Mode register set command
(/CS, /RAS, /CAS, /WE Low)
CLK
The EDD12xxALTA has a mode register that defines how the device operates.
In this command, A0 through A11, BA0 and BA1 are the data input pins.
CKE
/CS
After power on, the mode register set command must be executed to initialize the
/RAS
device.
/CAS
The mode register can be set only when all banks are in idle state.
During tMRD, the EDD12xxALTA can not accept any other commands.
H
/WE
BA0,BA1
A10
Add
Bank activate command
Fig.3 Bank activate command
(/CS, /RAS = Low, /CAS, /WE = High)
The EDD12xxALTA has four banks, each with 4,096 rows.
This command activates the bank and the row address selected by BA0 and
CLK
CKE
H
/CS
/RAS
BA1, and by A0 through A11 respectively.
This command corresponds to a conventional DRAM's /RAS falling.
/CAS
/WE
BA0,BA1
Preliminary Data Sheet E0136E30
A10
Row
Add
Row
11
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Precharge command
Fig.4 Precharge command
(/CS, /RAS, /WE= Low, /CAS = High)
CLK
This command begins precharge operation of the bank selected by BA0, BA1
and A10. When A10 is High, all banks are precharged, regardless of BA0 and
CKE
H
/CS
/RAS
BA1.
When A10 is Low, only the bank selected by BA0 and BA1 is precharged.
After this command, the EDD12xxALTA can't accept the activate command to
the precharging bank during tRP (precharge to activate command period).
This command can terminate the current burst operation.
This command corresponds to a conventional DRAM's /RAS rising.
/CAS
/WE
BA0, BA1
A10
(Precharge select)
Add
Read command
Fig.5 Read command
(/CS, /CAS = Low, /RAS, /WE = High)
CLK
This command begins the burst read operation. The bank and the burst start
column address are selected by BA0 and BA1 and by A0 through A11
respectively.
CKE
H
/CS
/RAS
Read data is available after /CAS latency requirements which have been met.
/CAS
And it is synchronized with DQS.
/WE
BA0, BA1
A10
(Auto precharge select)
Add
Write command
Col.
Fig.6 Write command
(/CS, /CAS, /WE = Low, /RAS = High)
CLK
This command begins burst write operation. The bank and the burst start
column address are selected by BA0 and BA1 and by A0 through A11
CKE
H
/CS
/RAS
respectively.
Write data must be input by DQ0 through DQ15. Byte mask data must be input
by DM, LDM, and UDM. Both data must be synchronized with DQS that is
inputted after this command.
/CAS
/WE
BA0, BA1
A10
(Auto precharge select)
Add
12
Preliminary Data Sheet E0136E30
Col.
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
CBR (auto) refresh command
Fig.7 CBR (auto) refresh
command
(/CS, /RAS, /CAS = Low, /WE, CKE = High)
CLK
This command is a request to begin the CBR (auto) refresh operation.
The refresh address is generated internally.
Before executing CBR (auto) refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
CKE
H
/CS
/RAS
/CAS
bank activate command.
During tRFC (refresh command to refresh or activate command period), the
EDD12xxALTA cannot accept any other command.
/WE
BA0, BA1
A10
Add
Self refresh entry command
Fig.8 Self refresh entry command
(/CS, /RAS, /CAS, CKE = Low, /WE = High)
CLK
After the command execution, self refresh operation continues while CKE
CKE
/CS
remains low.
When CKE goes high, the EDD12xxALTA will exit the self refresh mode.
/RAS
During self refresh mode, refresh interval and refresh operation are performed
/CAS
internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
/WE
BA0, BA1
A10
Add
Burst stop command
Fig.9 Burst stop command
(/CS, /WE = Low, /RAS, /CAS = High)
CLK
This command can stop the current read burst operation.
CKE
H
/CS
/RAS
/CAS
/WE
BA0, BA1
A10
Add
Preliminary Data Sheet E0136E30
13
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
No operation
Fig.10 No operation
(/CS = Low, /RAS, /CAS, /WE = High)
CLK
This command is not an execution command.
This command doesn't begin or terminate any operation.
CKE
/CS
/RAS
/CAS
/WE
BA0, BA1
A10
Add
14
Preliminary Data Sheet E0136E30
H
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
3. Simplified State Diagram
SREX
Self
Refresh
Recovery
Self
Refresh
SELF
MRS, EMRS
Mode
Register
Set
REF
IDLE
(tMRD)
CBR (auto)
Refresh
(tRFC)
PW
ACT
DN
PDE
X
Bank
Activating
Power
Down
DN
PW
EX
PD
BANK
ACTIVE
BS
T
RE
ITA
WR
(B
A
AD
(tW
RE
PRE/PALL
R)
AD
ur
st
en
d)
READ
WRIT
READ
READ
RE
AD
A
READA
E(
PR
n)
)
AL
tD
tio
R/
(tW
ina
erm
et
arg
ch
Pre
WRITA
PR
E(
Pre
ch
arg
et
erm
ina
tion
(B
ur
)
st
en
d)
WRIT
Precharge
READA
PRE/PALL
POWER
ON
(tRP)
Automatic sequence
Manual input
Preliminary Data Sheet E0136E30
15
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
4. Truth Table
4.1 Command Truth Table
Function
Symbol
CKE
/CS
n-1
n
/RAS
/CAS
/WE
Address
BA0 BA1
A10
A0-9,A11
Device deselect
DESL
H
x
H
x
x
x
x
x
x
No operation
NOP
H
x
L
H
H
H
x
x
x
BST
H
x
L
H
H
L
x
x
x
READ
H
x
L
H
L
H
V
L
V
Burst stop
Read
Read with auto precharge
READA
Write
WRIT
Write with auto precharge
H
H
x
L
H
L
L
V
L
WRITA
Bank active
ACT
H
x
L
L
H
H
Prechrage select bank
PRE
H
x
L
L
H
L
Precharge all banks
PALL
Mode register set
MRS
H
x
L
L
L
L
Extended mode register set
V
H
V
V
L
x
EMRS
x
H
x
L
L
L
V
H
L
L
V
4.2 DM Truth Table
Function
Symbol
CKE
DM
n-1
n
Data write enable
ENB
H
x
U
L
L
Data mask
MASK
H
x
H
Upper byte write enable
ENBU
H
x
Lower byte write enable
ENBL
H
Upper byte write inhibit
MASKU
H
Lower byte write inhibit
MASKL
H
L
x
x
x
L
x
H
x
x
x
H
4.3 CKE Truth Table
Current State
Function
Symbol
CKE
n-1
n
Idle
CBR (auto) refresh command
REF
H
H
Idle
Self refresh entry
SELF
H
L
Self refresh
Self refresh exit
SREX
L
H
Idle
Power down entry
Bank(s) active Power down entry
Power down
Power down exit
PWDN
PWDN
PDEX
H
H
L
L
L
H
/CS
/RAS
/CAS
/WE
Address
L
L
L
H
x
H
x
x
x
x
L
H
H
x
x
H
x
x
x
x
L
H
H
x
x
H
x
x
x
x
L
H
H
x
x
H
x
x
x
x
L
H
H
x
x
Remark H = High level, L = Low level, V = Valid, x = High or Low level (Don't care)
16
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
4.4 Operative Command Table
Note1
(1/3)
Current state
Idle
Row active
Read
/CS /RAS /CAS /WE
Address
Command
Action
Notes
H
x
x
x
x
DESL
Nop or Power down
L
H
H
H
x
NOP
Nop or Power down
L
H
H
L
x
BST
ILLEGAL
2
L
H
L
H
BA, CA, A10 READ/READA ILLEGAL
2
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
2
L
L
H
H
BA, RA
ACT
Bank activating
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
x
REF/SELF
CBR (auto) refresh or Self refresh
4
L
L
L
L
Op-Code
MRS
Mode register set
4
L
L
L
L
Op-Code
EMRS
Extended mode register set
4
3
H
x
x
x
x
DESL
Nop
L
H
H
H
x
NOP
Nop
L
H
H
L
x
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA Begin read/read with AP
L
H
L
L
BA, CA, A10 WRIT/WRITA Begin write/write with AP
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
Precharge/Precharge all banks
5
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
H
x
x
x
x
DESL
Nop (Row active after burst end)
L
H
H
H
x
NOP
Nop (Row active after burst end)
L
H
H
L
x
BST
terminate burst, Row active
L
H
L
H
BA, CA, A10 READ/READA terminate burst, Begin new read/
2
6
6
read with AP
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
terminate burst,
6
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Precharge/Precharge all banks
Write
L
L
L
L
Op-Code
EMRS
ILLEGAL
H
x
x
x
x
DESL
Nop (Row active after tWR)
L
H
H
H
x
NOP
Nop (Row active after tWR)
L
H
H
L
x
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA terminate burst, Begin read/read with AP 6
L
H
L
L
BA, CA, A10 WRIT/WRITA terminate burst, Begin new write/
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PALL
terminate burst, Precharge/Precharge all 6
banks
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
6
write with AP
Preliminary Data Sheet E0136E30
2
17
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
(2/3)
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Notes
Read with auto
H
x
x
x
x
DESL
Nop (Precharge after burst end)
precharge
L
H
H
H
x
NOP
Nop (Precharge after burst end)
L
H
H
L
x
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA ILLEGAL
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
Write with
H
x
x
x
x
DESL
Nop (Idle after tDAL)
auto precharge
L
H
H
H
x
NOP
Nop (Idle after tDAL)
L
H
H
L
x
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA ILLEGAL
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Precharge
Row activating
18
L
L
L
L
Op-Code
EMRS
ILLEGAL
H
x
x
x
x
DESL
Nop (Idle after tRP)
L
H
H
H
x
NOP
Nop (Idle after tRP)
L
H
H
L
x
BST
ILLEGAL
2
L
H
L
H
BA, CA, A10 READ/READA ILLEGAL
2
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
Nop (Idle after tRP)
3
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
H
x
x
x
x
DESL
Nop (Row active after tRCD)
L
H
H
H
x
NOP
Nop (Row active after tRCD)
L
H
H
L
x
BST
ILLEGAL
2
L
H
L
H
BA, CA, A10 READ/READA ILLEGAL
2
L
H
L
L
BA, CA, A10 WRIT/WRITA ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
(3/3)
Current state
Write recovering
/CS /RAS /CAS /WE
Address
Command
Action
Notes
H
x
x
x
x
DESL
Nop (Row active after tWR)
L
H
H
H
x
NOP
Nop (Row active after tWR)
L
H
H
L
x
BST
Nop (Row active after tWR)
L
H
L
H
BA, CA, A10 READ/READA
Begin read/read with AP
L
H
L
L
BA, CA, A10 WRIT/WRITA
Begin new write/write with AP
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
Write recovering
H
x
x
x
x
DESL
Nop (Idle after tDAL)
with auto precharge
L
H
H
H
x
NOP
Nop (Idle after tDAL)
L
H
H
L
x
BST
ILLEGAL
L
H
L
H
BA, CA, A10 READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10 WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
L
L
L
L
Op-Code
EMRS
ILLEGAL
H
x
x
x
x
DESL
Nop (Idle after tRFC)
L
H
H
H
x
NOP
Nop (Idle after tRFC)
L
H
H
L
x
BST
Nop (Idle after tRFC)
2
L
H
L
x
x
READ/WRIT
ILLEGAL
2
L
L
H
x
x
ACT/PRE/PALL
ILLEGAL
3
L
L
L
x
x
REF/SELF/MRS/E ILLEGAL
MRS
Mode register
H
x
x
x
x
DESL
Nop (Idle after tMRD)
accessing
L
H
H
H
x
NOP
Nop (Idle after tMRD)
L
H
H
L
x
BST
ILLEGAL
2
L
H
x
x
x
READ/WRIT
ILLEGAL
2
L
L
x
x
x
ACT/PRE/PALL/R ILLEGAL
EF/SELF/MRS/EM
RS
2
Refresh
Remark
H = High level, L = Low level, x = High or Low level (Don't care),
BA = Bank address, RA = Row address, CA = Column address, A10 = Precharge control address,
Op-Code = Operand code, Nop = No operation, AP = Auto precharge,
ILLEGAL = Device operation and/or data-integrity are not guaranteed
Notes 1. All entries assume that CKE is active (High level) during the preceding clock cycle and the current clock
cycle.
2. ILLEGAL to bank in specified states; function may be legal in the bank indicated by BA0, BA1 depending on
the state of that bank.
3. Nop to bank precharging or in idle state. May precharge bank indicated by BA0, BA1.
4. ILLEGAL if any bank is not idle.
5. ILLEGAL if tRAS is not satisfied.
6. Must satisfy command interval and/or burst terminate condition.
Preliminary Data Sheet E0136E30
19
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
4.5 Command Truth Table for CKE
Current State
Self refresh
Self refresh recovery
Power down
All banks idle
CKE
/CS /RAS /CAS /WE Add Command
n-1
n
H
x
x
x
x
x
x
L
H
H
x
x
x
x
L
H
H
x
x
Action
ILLEGAL(Impossible)
SREX
Exit S.R, self refresh recovery
L
L
x
x
x
x
x
H
H
H
x
x
x
x
DESL
Nop (Idle after tRC)
H
H
L
H
H
H
x
NOP
Nop (Idle after tRC)
H
L
x
x
x
x
x
ILLEGAL
L
x
x
x
x
x
x
ILLEGAL (Impossible)
H
x
x
x
x
x
x
ILLEGAL (Impossible)
L
H
H
x
x
x
x
L
H
H
x
x
x
x
x
x
x
PDEX
Exit power down, Idle
L
L
Maintain power down
H
H
V
V
V
V
x
H
L
H
x
x
x
x
PWDN
Power down entry
1
H
L
L
H
H
H
x
PWDN
Power down entry
1
H
L
L
x
x
L
x
ILLEGAL
H
L
L
H
L
x
x
ILLEGAL
H
L
L
L
H
x
x
ILLEGAL
H
L
L
L
L
H
x
Refer to operative command table
SELF
Self refresh entry
L
x
x
x
x
x
x
Power down
x
x
x
x
x
x
Refer to operative command table
L
x
x
x
x
x
x
Power down
Any state except
H
H
V
V
V
V
V
Refer to operative command table
listed above
H
L
x
x
x
x
x
ILLEGAL
L
x
x
x
x
x
x
ILLEGAL (Impossible)
Remark H = High level, L = Low level, x = High or Low level (Don't care), V = Valid,
Add = Address (A0 - A11, BA0, BA1),
ILLEGAL = Device operation and/or data-integrity are not guaranteed
Notes 1. Self refresh can be entered only from all banks idle state.
Power down can be entered only from all banks idle or row active state.
2. CKE low to high transition will re-enable CLK and other inputs asynchronously.
A Minimum setup time must be satisfied before any command other than exit.
20
2
Maintain self refresh
H
Row active
Notes
Preliminary Data Sheet E0136E30
1
1
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
5. Initialization
The EDD12xxALTA is initialized in the power-on sequence according to the following.
(1) Power must first be applied to VDD, then VDDQ, and finally to VREF. VTT must be applied.
(2) Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS
output will be in Hi-Z state.
(3) To stabilize internal circuits, when power is applied a 100 µs or longer pause must precede any signal toggling.
(4) After the pause, all banks must be precharged using precharge command. The precharge all banks command is
convenient.
(5) EMRS command must be performed to enable or disable DLL. Then MRS command must be applied to reset
DLL. After this MRS command additional 200 cycles are required before read command.
(6) All banks must be precharged using precharge command again. Then two or more CBR (auto) refresh command
must be performed.
(7) After the refresh the mode register can be programmed by MRS command.
Case 1: MRS after the REF
Min. 200 cycles before Read command
tMRD
tMRD
tRP
tRFC
tMRD
tRFC
CLK
CKE
Command
Remark
PALL
EMRS
MRS
DLL
enable / disable
DLL reset
PALL
REF
REF
MRS
Any
Command
Minimum 2 REF cycles must be performed.
Two refresh commands may be follow the first MRS command.
Preliminary Data Sheet E0136E30
21
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
6. Programming the Mode Register
The mode register is programmed by the Mode register set command using address bits BA0, BA1, A11 through A0
as data inputs. The register retains data until it is reprogrammed or the device loses power.
The mode register has five fields;
Option
: A11 through A9, A7
DLL reset
: A8
/CAS latency
: A6 through A4
Wrap type
: A3
Burst length
: A2 through A0
Following mode register programming, no command can be issued during tMRD.
/CAS Latency
/CAS latency is the critical parameter. It tells how many clocks must elapse before the data is available.
The value is determined by the frequency of the clock and the speed grade of the device.
Burst Length
Burst length is the number of words that will be output or input in read or write cycle. After read burst is completed,
the output bus becomes Hi-Z.
The burst length is programmable as 2, 4 and 8.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data is addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen depends on the type of CPU in the system.
Some microprocessor cache system are optimized for sequential addressing and others for interleaved addressing.
7.1 Burst Length and Sequence shows the addressing sequence for each burst length using them. Both
sequences support bursts of 2, 4 and 8.
The extended mode register has two fields;
Option
: A11 through A1
DLL enable
: A0
22
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
7. Mode Register
BA1 BA0 A11
x
x
x
BA1 BA0 A11
0
1
0
BA1 BA0 A11
0
0
0
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
x
x
0
1
V
V
V
V
V
V
V
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
0
0
0
0
0
0
DLL
A10
A9
A8
A7
0
0
DLL
0
Bit 8
DLL
0
Normal
1
Reset
A6
A5
LTMODE
A4
A3
WT
A2
A1
A0
Vender specific
Extended mode register set
Bit 0
DLL
0
Enable
1
Disable
Mode register set
BL
Bit 2 - Bit 0
WT = 0
WT = 1
000
R
R
001
2
2
Burst
010
4
4
Length
011
8
8
100
R
R
101
R
R
110
R
R
111
R
R
Remark V = Valid, x = Don't care
CLK
CKE
/CS
Wrap
Bit 3
Mode
Type
0
Sequential
1
Interleave
Bit 6 - Bit 4
/CAS Latency
000
R
001
R
Latency
010
2
Mode
011
R
100
R
101
R
110
2.5
111
R
/RAS
/CAS
/WE
A0 - A11,
BA0, BA1
Mode register set timming
Remark R: Reserved
Preliminary Data Sheet E0136E30
23
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
7.1 Burst Length and Sequence
[Burst Length = Two]
Starting Address
Sequential Addressing Sequence
Interleave Addressing Sequence
(column address A0, binary)
(decimal)
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
Starting Address
Sequential Addressing Sequence
Interleave Addressing Sequence
(column address A1 - A0, binary)
(decimal)
(decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
[Burst Length = Four]
[Burst Length = Eight]
24
Starting Address
Sequential Addressing Sequence
Interleave Addressing Sequence
(column address A2 - A0, binary)
(decimal)
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
8. Address Bits of Bank-Select and Precharge
[Activate Command]
A10
A9
A8
A6
A5
A4
A3
A2
A1
A0
Row Address
A7
A6
A5
A4
A3
A2
A1
A0
Row Address
A7
A6
A5
A4
A3
A2
A1
A0
Column Address
BA1
BA0
A11
A7
BA1
BA0
Result
0
0
Select Bank A, ''Activate'' command
0
1
Select Bank B, ''Activate'' command
1
0
Select Bank C, ''Activate'' command
1
1
Select Bank D, ''Activate'' command
[Precharge Command]
BA1
BA0
A11
A10
A9
A8
BA1
BA0
A10
Result
0
0
0
Precharge Bank A
0
1
0
Precharge Bank B
1
0
0
Precharge Bank C
1
1
0
Precharge Bank D
x
x
1
Precharge All Banks
Remark x = Don't care
[Read/Write Command]
BA1
BA0
A11
A10
A10
Result
A9
A8
0
Disables Auto-Precharge
1
Enables Auto-Precharge
BA1
BA0
Result
0
0
Enables Read/Write commands for Bank A
0
1
Enables Read/Write commands for Bank B
1
0
Enables Read/Write commands for Bank C
1
1
Enables Read/Write commands for Bank D
Preliminary Data Sheet E0136E30
25
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
9. Precharge
9.1 Read to Precharge Command Interval
The precharge command can be issued anytime after tRAS (MIN.) is satisfied. Soon after the precharge command is
issued, precharge operation performed and the DDR SDRAM enters the idle state after tRP is satisfied. The
parameter tRP is the time required to perform the precharge.
The earliest timing in a read cycle that a precharge command can be issued without losing any data in the burst is
as follows.
/CAS latency = 2
: (burst length/2) clocks after the read command is issued.
/CAS latency = 2.5
: (burst length/2) clocks after the read command is issued.
Burst length = 4
T0
T1
T2
T3
T4
T5
CLK
/CLK
CKE
/CAS latency = 2
Command
READ
PRE
Hi-Z
DQS
Q1
DQ
Q2
Q3
Hi-Z
Q4
/CAS latency = 2.5
Command
READ
PRE
Hi-Z
DQS
DQ
Q1
Q2
Q3
Q4
Hi-Z
(Must satisfy tRAS)
26
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
9.2 Write to Precharge Command Interval
In order to write all burst data to the memory cell correctly, the asynchronous parameter tWR must be satisfied. The
tWR specification defines the earliest time that a precharge command can be issued.
Burst length = 4
T0
T1
T2
T3
T4
T5
tWR
CLK
/CLK
DM
/CAS latency = 2, 2.5
Command
WRITE
PRE
Preamble
Postamble
DQS
Hi-Z
DQ
Q1
Q2
Q3
Q4
(Must satisfy tRAS)
Preliminary Data Sheet E0136E30
27
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
10. Auto Precharge
During a read or write command cycle, A10 controls auto precharge. A10 high in the read or write command (read
with auto precharge command or write with auto precharge command), auto precharge is selected and begin
automatically.
The tRAS must be satisfied with a read with auto precharge or a write with auto precharge operation. In addition, the
next activate command to the bank being precharged cannot be executed until the precharge cycle ends.
In read cycle, once auto precharge starts, an activate command to the bank can be issued after tRP is satisfied.
In write cycle, tDAL must be satisfied to issue the next activate command to the bank being precharged.
10.1 Read with Auto Precharge
When a read with auto precharge command is issued, the auto precharge begins (Burst length / 2) clocks later from
a read with auto precharge command.
Burst length = 4
T0
T1
T2
T3
Burst length / 2 cycle
T4
T5
tRP
CLK
/CLK
CKE
/CAS latency = 2
Command
READA
ACT
Auto precharge starts
Hi-Z
Q1
DQ
Q2
Q3
Q4
/CAS latency = 2.5
Command
READA
ACT
Auto precharge starts
Hi-Z
DQ
Q1
Q2
Q3
Q4
(When tRAS is satisfied)
Remark READA means Read with Auto Precharge command
28
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
10.2 Write with Auto Precharge
When a write with auto precharge command is issued, the auto precharge begins after tWR is satisfied.
Burst length = 2
T0
T1
T2
T3
T4
T5
T6
tRP
tWR
CLK
/CLK
CKE
/CAS latency = 2, 2.5
Command
Auto precharge starts
ACT
WRITEA
DQS
DQ
D1
D2
(When tRAS is satisfied)
Remark WRITEA means Write with Auto Precharge command
Preliminary Data Sheet E0136E30
29
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
11. Read/Write Command Interval
11.1 Read to Read Command Interval
During a read cycle, when new read command is issued, it will be effective after /CAS latency, even if the previous
read operation is not completed. READ will be interrupted by another READ.
The interval between commands is minimum 1 cycle. Each read command can be issued in every clock without any
restriction.
Burst length = 4
T0
T1
T2
T3
T4
T5
T6
1 cycle
CLK
/CLK
CKE
/CAS latency = 2
Command
READ A
READ B
Hi-Z
DQ
QA1
QA2
QB1
QB2
QB3
QB4
QA1
QA2
QB1
QB2
QB3
/CAS latency = 2.5
Command
DQ
30
READ A
READ B
Preliminary Data Sheet E0136E30
QB4
Hi-Z
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
11.2 Write to Write Command Interval
During a write cycle, when new write command is issued, the previous burst will terminate and the new burst will
begin with new write command. WRITE will be interrupted by another WRITE.
The interval between commands is minimum 1 cycle. Each write command can be issued in every clock without
any restriction.
Burst length = 4
T0
T1
T2
T3
T4
T5
1 cycle
CLK
/CLK
CKE
/CAS latency = 2, 2.5
Command
WRITE A
WRITE B
DQS
DQ
DA1
DA2
DB1
DB2
Preliminary Data Sheet E0136E30
DB3
DB4
31
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
11.3 Write to Read Command Interval
The burst write operation can be interrupted by read command of any bank. The data bus must be high impedance
at least 1 cycle prior to the first output data.
The minimum time interval between the rising clock edge after the last input data and the read command is tWTR.
When the read command is issued, the invalid data from the burst write cycle must be masked by DM.
T0
T1
T2
T3
T4
T6
T5
tWTR
CLK
/CLK
CKE
/CAS latency = 2
Command
WRITE A
READ B
Hi-Z
DQS
DA1
DQ
Hi-Z
DA2
QB1
QB2
QB3
QB4
QB1
QB2
QB3
DM
/CAS latency = 2.5
Command
WRITE A
READ B
Hi-Z
DQS
DQ
DA1
Hi-Z
DA2
DM
DQ and DQS : Input
32
DQ and DQS : Output
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
11.4 Read to Write Command Interval
To interrupt the burst read operation using the write command, the burst stop command must be issued to avoid
data conflict. The data bus must be high impedance when the write command is issued.
When the write command is issued, any residual data from the burst read cycle must be terminated by the burst
stop command. When /CAS latency is 2, 2.5, the burst stop command must be issued at least 2 cycles prior to the
write command.
T0
T1
T2
T0
T3
T4
T1
T5
T6
T7
T8
T2
T9
T10
T3
T11
T12
T4
T13
T14Burst length = 8
T6
T5
CLK
/CLK
CKE
/CAS latency = 2
Command
READ A
BST
WRITE B
Hi-Z
DQS
QA1
DQ
QA2
QA3
QA4
Hi-Z
DB1
DB2
DB
DB1
DB2
DB
/CAS latency = 2.5
Command
READ A
BST
WRITE B
Hi-Z
DQS
DQ
QA1
QA2
QA3
DQ and DQS : Output
Preliminary Data Sheet E0136E30
QA4
Hi-Z
DQ and DQS : Input
33
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
12. Burst Termination
12.1 Burst Stop Command in Read Cycle
During a burst read cycle, when the burst stop command is issued at the rising edge of the clock (CLK), the burst
read data are terminated and the data bus goes to high impedance after the /CAS latency from the burst stop
command.
T0
T1
T2
T3
T0
T4
T5
T1
T6
T7
T9
T8
T2
T10
T3
T11
T4
Burst length = 8
T5
CLK
/CLK
CKE
/CAS latency = 2
Command
READ
BST
Hi-Z
Q1
DQ
Q2
Q3
Q4
Q1
Q2
Q3
/CAS latency = 2.5
Command
READ
BST
Hi-Z
DQ
Q4
(When tRAS is satisfied)
Remark BST means Burst Stop command
34
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
12.2 Terminating a Burst Read Cycle by Precharge Command
During a burst read cycle without auto precharge, the burst read operation is terminated by a precharge command of
the same banks. When the precharge command is issued at the rising edge of the clock (CLK), the burst read
operation is terminated and the data bus goes to high impedance after the /CAS latency from the precharge
command. The precharge command can be issued after tRAS (MIN.) is satisfied.
Burst length = Full page
T0
T1
T2
T3
T4
T5
CLK
/CLK
CKE
/CAS latency = 2
Command
READ
PRE
Hi-Z
Q1
DQ
Q2
Q3
Q4
Q1
Q2
Q3
/CAS latency = 2.5
Command
READ
PRE
Hi-Z
DQ
Q4
(When tRAS is satisfied)
Preliminary Data Sheet E0136E30
35
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
12.3 Terminating a Burst Write Cycle by Precharge Command
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command
of the same banks. In order to write the last input data to the memory cell correctly, tWR (MIN.) must be satisfied. When
the precharge command is issued at the rising edge of the clock (CLK), the invalid data from the burst write cycle
must be masked by DM.
Burst length = 8
T0
T1
T2
T3
T4
tWR
CLK
/CLK
CKE
/CAS latency = 2, 2.5
Command
WRITE
PRE
DQS
DQ
D1
D2
DM
36
Preliminary Data Sheet E0136E30
T5
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13. Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
13.1 Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
VDD, VDDQ
−0.5 to +3.6
V
Voltage on any pin relative to VSS
VT
−0.5 to +3.6
V
Short circuit output current
IO
50
mA
Voltage on power supply pin relative to VSS
Power dissipation
PD
1
W
Storage temperature
Tstg
−55 to + 125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
13.2 Recommended Operating Conditions
Parameter
Supply voltage
Symbol
Condition
MIN.
TYP.
MAX.
Unit
VDD
2.3
2.5
2.7
V
Supply voltage for DQ, DQS
VDDQ
2.3
2.5
2.7
V
Input reference voltage
VREF
0.49 × VDDQ
0.51 × VDDQ
V
VTT
VREF − 0.04
VREF + 0.04
V
High level dc input voltage
VIH (DC)
VREF + 0.18
VDD + 0.3
V
Low level dc input voltage
VIL (DC)
−0.3
VREF − 0.18
V
Input differential voltage (CLK and /CLK)
VID (DC)
0.36
VDDQ + 0.6
V
Input crossing point voltage (CLK and /CLK)
VIX
0.5 × VDDQ–0.2
0.5 × VDDQ+0.2
V
Operating ambient temperature
TA
0
70
°C
Termination voltage
VREF
13.3 Pin Capacitance (TA = 25 °C, f = 100 MHz)
Parameter
Input capacitance
Data input/output capacitance
Symbol
Condition
MIN.
TYP.
MAX.
Unit
CI1
A0 - A11, BA0, BA1
2.5
3.5
pF
CI2
CLK, /CLK, CKE, /CS, /RAS, /CAS, /WE
2.5
3.5
pF
CIO1
DQS, LDQS, UDQS
4
5
pF
CIO2
DQ0 - DQ15, DM, LDM, UDM
4
5
pF
Preliminary Data Sheet E0136E30
37
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13.4 DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted)
Parameter
Operating current
(ACT-PRE)
Operating current
Symbol
IDD0
IDD1
(ACT-READ-PRE)
Test condition
/CAS Grade
latency
tRC = tRC(MIN.), tCK = tCK (MIN.), One bank,
Active-precharge, DQ, DM and DQS
inputs changing twice per clock cycle,
Address and control inputs changing
once per clock cycle
tRC = tRC(MIN.), tCK = tCK (MIN.), One CL = 2
bank, Active-read-precharge,
IO = 0 mA, Burst length = 2,
Address and control inputs
changing once per clock cycle CL = 2.5
Maximum
x4
x8
-7A
115
-75
115
-1A
100
Unit
Notes
mA
1
x16
-7A
140
150
170
-75
130
140
160
-1A
130
140
160
-7A
150
160
180
-75
150
160
180
-1A
140
150
170
mA
Precharge power down
standby current
IDD2P
CKE ≤ VIL(MAX.), tCK = tCK(MIN.),
All banks idle, Power down mode
2
mA
Idle standby current
IDD2N
CKE ≥ VIH(MIN.), tCK = tCK(MIN.), /CS ≥ VIH(MIN.),
All banks idle, Address and other control inputs
45
mA
Active power down
standby current
IDD3P
CKE ≤ VIL(MAX.), tCK = tCK(MIN.), One bank active,
Power down mode
25
mA
Active standby current
IDD3N
/CS ≥ VIH(MIN.), CKE ≥ VIH(MIN.), tCK = tCK(MIN.), tRC =
tRAS(MAX.), One bank, Active-precharge, DQ, DM
and DQS inputs changing twice per clock
cycle, Address and other control inputs
changing once per clock cycle
65
mA
Operating current
IDD4R
tCK = tCK(MIN.), Continuous burst
read, Burst length = 2, IO =
0mA, One bank active,
Address and control inputs
changing once per clock cycle
changing once per clock cycle
(Burst read)
Operating current
IDD4W
(Burst write)
CBR (auto) refresh current
Self refresh current
IDD5
IDD6
tCK = tCK(MIN.), Continuous burst
write, Burst length = 2, One
bank active, Address and
control inputs changing once
per clock cycle
tRFC = tRFC(MIN.)
CL = 2
CL = 2.5
CL = 2
CL = 2.5
-7A
200
210
230
-75
170
180
200
-1A
170
180
200
-7A
210
220
240
-75
210
220
240
-1A
180
190
210
-7A
195
205
225
-75
160
170
190
-1A
160
170
190
-7A
195
205
225
-75
195
205
225
-1A
160
170
190
-7A
250
-75
250
-1A
220
CKE ≤ 0.2 V
2
mA
2
mA
2
mA
mA
Notes 1. IDD1 depends on output loading and cycle rates. Specified values are obtained with the output open.
2. IDD4R and IDD4W depend on output loading and cycle rates. Specified values are obtained with the output
open.
38
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13.5 DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit Notes
Input leakage current
II(L)
Any input 0 V ≤ VIN ≤ VDD, all other pins not under
test = 0 V
−2
2
µA
Output leakage current
IO(L)
DOUT is disabled, VO = 0 to VDDQ + 0.3 V
−5
5
µA
Output high current
IOH
VOUT = 1.95 V
–15.2
mA
Output low current
IOL
VOUT = 0.35 V
15.2
mA
13.6 AC Characteristics (Recommended Operating Conditions unless otherwise noted)
13.6.1 Test Conditions
Parameter
Symbol
MIN.
MAX.
Unit
Input Reference voltage (Input timing measurement reference level)
VREF
0.49 x VDDQ
0.51 x VDDQ
V
VREF + 0.04
V
VTT
VREF − 0.04
High level ac input voltage
VIH(ac)
VREF + 0.31
Low level ac input voltage
VIL(ac)
Input differential voltage (CLK and /CLK)
VID(ac)
0.7
Input signal slew rate
SLEW
1
Termination voltage (Output timing measurement reference level)
Notes
1
V
VREF − 0.31
VDDQ + 0.6
V
V
V/ns
2
Notes 1. Output waveform timing is measured where the output signal crosses through the VTT level.
2. Slew rate is to be maintained in the VIL (ac) to VIH(ac) range of the input signal swing.
SLEW = (VIH(ac)-VIL(ac))/ ∆t
VTT
RT = 50 Ω
Output
CLOAD = 30 pF
Preliminary Data Sheet E0136E30
39
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13.6.2 Timing Diagram
tCK
tCL
tCH
CLK
VID(ac)
/CLK
tIS
Command
(Input)
tIS
tIH
VREF + 0.31 V
Valid
Valid
VREF - 0.31 V
tIS
Address
(Input)
tIH
tIH
tIS
tIH
VREF + 0.31 V
Valid
Valid
VREF - 0.31 V
tRPRE
DQS
(Output)
(CL = 2)
tRPST
tDQSCK
tDQSCK
VTT
tQH
tDQSQ
tAC
tQH
tDQSQ
tAC
DQ
(Output)
(CL = 2)
VTT
tRPRE
tDQSCK
DQS
(Output)
(CL = 2.5)
tDQSS
(MIN.)
DQS
(Input)
tRPST
tDQSCK
VTT
tQH
tQH
tDQSQ
tDQSQ
tAC
tAC
DQ
(Output)
(CL = 2.5)
Valid
Valid
Valid
VTT
Valid
tDQSH
tDQSL
tDSH
tDQSS
VREF + 0.31 V
VREF
VREF - 0.31 V
tWPRES
tWPST
tWPRE
VREF + 0.31 V
DQ and DM
(Input)
VREF
Valid
Valid
tDS tDH
tDS tDH
VREF - 0.31 V
tDQSS
(MAX.)
DQS
(Input)
tDQSH
tDQSL
tDSS
tDQSS
VREF + 0.31 V
VREF
VREF - 0.31 V
tWPRES
tWPST
tWPRE
VREF + 0.31 V
DQ and DM
(Input)
VREF
Valid
Valid
tDS tDH
tDS tDH
VREF - 0.31 V
40
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13.6.3 Synchronous Characteristics
Parameter
Clock cycle time
Symbol
CL = 2.5
tCK
CL = 2
-7A
-75
1A
Unit
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
7.5
12
7.5
12
10
12
7.5
12
10
12
10
12
ns
CLK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CLK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQ output access time from CLK, /CLK
tAC
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
DQS output access time from CLK, /CLK
tDQSCK
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
DQS-DQ skew (for DQS and associated
DQ signals)
tDQSQ
0.5
0.5
0.6
ns
DQS-DQ skew (for DQS and all DQ
signals)
tDQSQA
0.5
0.5
0.6
ns
Data out low-impedance time from CLK,
/CLK
tLZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
Data out high-impedance time from CLK,
/CLK
tHZ
–0.75
0.75
–0.75
0.75
–0.8
0.8
ns
Half clock period
tHP
MIN.
(tCH, tCL)
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQ output hold time from DQS
tQH
tHP –
0.75
tHP –
0.75
tHP – 1
ns
DQ and DM input setup time
tDS
0.5
0.5
0.6
ns
DQ and DM input hold time
tDH
0.5
0.5
0.6
ns
tDIPW
1.75
1.75
2
ns
Write preamble setup time
tWPRES
0
0
0
ns
Write preamble
tWPRE
0.25
0.25
0.25
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write command to first DQS latching
transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS input high pulse width
tDQSH
0.35
0.35
0.35
tCK
DQS input low pulse width
tDQSL
0.35
0.35
0.35
tCK
DQS falling edge to CLK setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge hold time from CLK
tDSH
0.2
0.2
0.2
tCK
Address and control input setup time
tIS
0.9
0.9
1.1
ns
Address and control input hold time
tIH
0.9
0.9
1.1
ns
Address and control input pulse width
tIPW
2.2
2.2
2.5
ns
Internal write to read command delay
tWTR
1
1
1
tCK
DQ and DM input pulse width (for each
input)
MIN.
(tCH, tCL)
Preliminary Data Sheet E0136E30
MIN.
(tCH, tCL)
Note
ns
41
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
13.6.4 Synchronous Characteristics Example
Symbol
tCK =7.5 ns
tCK =10 ns
Unit
MIN.
MAX.
MIN.
MAX.
tCH
3.4
4.1
4.5
5.5
ns
tCL
3.4
4.1
4.5
5.5
ns
tRPRE
6.75
8.25
9
11
ns
tRPST
3
4.5
4
6
ns
tWPRE
1.88
tWPST
3
4.5
4
6
ns
9.4
7.5
12.5
ns
2.5
ns
tDQSS
5.6
tDQSH
2.63
3.5
ns
tDQSL
2.63
3.5
ns
tDSS
1.5
2
ns
tDSH
1.5
2
ns
tWTR
7.5
10
ns
13.6.5 Asynchronous Characteristics
Parameter
Symbol
-7A
MIN.
ACT to REF/ACT command period
-75
MAX.
MIN.
-1A
MAX.
MIN.
Unit
MAX.
tRC
65
65
70
ns
REF to REF/ACT command period (refresh)
tRFC
75
75
80
ns
ACT to PRE command period
tRAS
45
PRE to ACT command period
tRP
20
20
20
ns
ACT to READ/WRITE delay
tRCD
20
20
20
ns
ACT(one) to ACT(another) command period
tRRD
15
15
15
ns
Write recovery time
tWR
2
2
2
CLK
Auto precharge write recovery time + precharge
tDAL
35
35
35
ns
Mode register set command cycle time
tMRD
15
15
15
ns
Exit self refresh to command
tXSNR
75
75
80
ns
Average periodic Refresh interval
tREF1
(operation)
120,000
45
120,000
50
120,000
ns
time
42
15.6
Preliminary Data Sheet E0136E30
15.6
15.6
µs
AC Parameters for Read Timing 1 (Manual Precharge, Burst Length = 4, /CAS Latency = 2.5)
T0
tCK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
tCH
tCL
tCK
/CLK
tCL
tCH
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CKE
tIH
tIS
tIS tIH
/CS
/RAS
;;;;
;;;;
/WE
BA0
BA1
A10
ADD
tIS tIH
DM
L
tDQSCK tDQSCK tDQSCK tDQSCK
tRPRE
DQS
DQ
VTT
VTT
tRPST
Hi-Z
tDQSQ
tDQSQ
tDQSQ
tDQSQ
tQH
tQH
tQH
tQH
tAC
tAC
tAC
tAC
Hi-Z
tRCD
tRAS
tRP
tRC
43
Activate Command
for Bank A
Read Command
for Bank A
Precharge Command
for Bank A
Activate Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
44
AC Parameters for Read Timing 2 (Auto Precharge, Burst Length = 4, /CAS Latency = 2.5)
T0
tCK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CLK
;;;;;;
;;;;
;;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;;
;
;
;;
;;
;;
;;
;
;;
;
;
;;
;;
;;
;;
;
;;
;
;
;;
;;
;;
;
;;
;;
;
;;
;
;
;;
;;
;;
;
;;
;;
;
;;
;
;
;
;;
;;
;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;
;;
;
;;
;
;
;
;;
;;
;
;;
;;
;
;;
;
;;
;;
;
;;
;;
;
;;
;
;;
;;
;
;;
;;
;
;;
;
;;
;;
;
;;
;;
;
;;
;
;;
;;;
;;
;;
;;
;
;;
;
;;
tCH
tCL
tCK
/CLK
tCL
tCH
CKE
tIS
tIS
Auto Precharge
Start for Bank C
tIH
tIH
/CS
/RAS
BA0
BA1
A10
ADD
tIS tIH
DM
;;;;
;;;;
/WE
tDQSCK tDQSCK tDQSCK tDQSCK
tRPRE
DQS
VTT
tRPST
Hi-Z
tDQSQ
DQ
VTT
tDQSQ
tDQSQ
tDQSQ
Hi-Z
tRCD
tRAS
tQH
tQH
tQH
tQH
tAC
tAC
tAC
tAC
tRRD
tRC
Activate Command
for Bank C
Bank C Read Command
with Auto Precharge
Activate Command
for Bank D
Activate Command
for Bank C
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Relationship between Frequency and Latency
Speed version
-7A
-75
-1A
Clock cycle time [ns]
7.5
7.5
7.5
10
10
10
Frequency [MHz]
133
133
133
100
100
100
/CAS latency
2.5
2
2.5
2
2.5
2
[tRCD]
3
3
3
2
2
2
5.5
5
5.5
4
4.5
4
[tRC]
9
9
9
7
7
7
[tRFC]
10
10
10
8
8
8
[tRAS]
6
6
6
5
5
5
[tRRD]
2
2
2
2
2
2
[tRP]
3
3
3
2
2
2
[tWR]
2
2
2
2
2
2
[tDAL]
5
5
5
4
4
4
/RAS latency (/CAS latency + [tRCD])
[tMRD]
2
2
2
2
2
2
[tXSNR]
10
10
10
8
8
8
Preliminary Data Sheet E0136E30
45
46
AC Parameters for Write Timing (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
CKE
Auto Precharge
Start for Bank C
tIS
tIS tIH
tIH
/CS
/RAS
/CAS
BA0
BA1
A10
ADD
tIS tIH
DM
tDQSS
tWPRE
tWPRES
DQS
VTT
DQ
VTT
Hi-Z
tDS
tWPST
tDH
Hi-Z
tRCD
tDAL
tRC
tRRD
tRCD
tWR
tRP
tRAS
tRC
Bank C Activate
Activate
Write Command Command
Command
for Bank C with Auto Precharge for Bank B
Bank B
Write Command
without Auto Precharge
Activate
Command
for Bank C
Precharge
Command
for Bank B
Activate
Command
for Bank B
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
Mode Register Set (Burst Length = 4, /CAS Latency = 2)
/WE
BA0
BA1
A10
ADD
ADDRESS KEY
DM
VTT
Mode
Register Set
Command
47
tRP
Activate
Command
is valid
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
;;;
;;
;;;
;;
;;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;;
;
;
;;
;
;;
;;
;
;
;;
;
;
;;
;;
;;
;
;
;;
;
;;
;;
;
;;
;
;;
;
;
;;
;;
;
;;
;
/CAS
Preliminary Data Sheet E0136E30
DQ
Hi-Z
VTT
Hi-Z
DQS
tMRD
H
CKE
All Banks
Precharge
Command
T21
T20
T19
T18
T17
T16
T15
T14
T13
T12
T11
T10
T9
T8
T7
T6
T5
T4
T3
T2
T1
T0
CLK
/CLK
/CS
/RAS
48
Power On Sequence and CBR (auto) Refresh
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
CLK
/CLK
CKE
tMRD
Low level is necessary
2 refresh cycles are necessary
;;
;
;;
;;;
;;
;;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;
;;
;
;
;;
;
;;
;
;
;;
;
;
;;
;
;;
;
;
;;
;
;
;;
;
;;
;
;
;;
;
;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;;
;
;
;
;
;
;;
;
;;
;;
;;
;
;
;
;
;;
;
;
;;
;;
;
;;
;
;
;;
;;
;
;;
;;
;;
;
;;
;
;
;
;;
;
;;
;;
;;
;;
;
;;
;
;
;
;
;;
;;
;
;;
;;
;;
;
;;
;
;;
;
;;
;;
;;
;
/CS
/RAS
/CAS
BA0
BA1
A10
ADDRESS KEY ADDRESS KEY
ADDRESS KEY
ADD
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
All Banks
Precharge
Command
is necessary
All Banks
Extended Mode
Mode
Refresh
Precharge
Register Set
Register Set
Command
Command
Command
Command
is necessary
is necessary
(DLL enable /
(DLL reset)
disable)
is necessary
is necessary
tMRD
tMRD
tRP
Refresh
Command
is necessary
tRFC
Mode
Register Set
Command
is necessary
tRFC
More than 200 cycles are necessary before Read command
Activate
Command
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
/CS Function (at 100 MHz, Burst Length = 4, /CAS Latency = 2.5)
Only /CS signal needs to be issued at minimum rate
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
CKE
H
/CS
/RAS
/WE
BA0
L
BA1
L
A10
RAa
ADD
RAa
DM
CAa
L
DQS VTT
Hi-Z
Hi-Z
DQ
CAb
QAa1 QAa2 QAa3 QAa4
VTT
49
Activate
Command
for Bank A
Read
Command
for Bank A
DAb1 DAb2 DAb3 DAb4
Write
Command
for Bank A
Precharge
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
50
Power Down Mode (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
tIS
CKE
;;;;
;;;
;
;
;
;
;;
;
;
;
;
;
;;
;
;
;
;
;
;;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;
;
;
;;
;
;
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
CAa
DM
DQS VTT
DQ
VTT
Hi-Z
Hi-Z
QAa1 QAa2 QAa3 QAa4
Precharge
Command
for Bank A
Power Down
Mode Entry
PRECHARGE STANDBY
Activate
Command
for Bank A
Power Down
Mode Exit
Read
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
CBR (auto) Refresh
H
CKE
/WE
BA0
BA1
A10
ADD
DM
CBR (auto) Refresh
Precharge CBR (auto) Refresh
Command
is necessary
tRFC
tRFC
51
tRP
Activate
Command
Read
Command
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
;
;;
;;
;;
;;
;;
;
;
;
;;
;;
;
;;
;;
;
;
;;
;;
;;
;;
;
;
;
;
;;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;
;;
;
;;
;;
;
;
;
;;
;;
;
;
;;
;;
;
;;
;
;;
;;
;;
;
;
;;
;
;
;;
;
;;
;
;;
;
;;
;
/CAS
Preliminary Data Sheet E0136E30
VTT
Q1 Q2
DQ
Hi-Z
VTT
Hi-Z
DQS
T21
T20
T19
T18
T17
T16
T15
T14
T13
T12
T11
T10
T9
T8
T7
T6
T5
T4
T3
T2
T1
T0
CLK
/CLK
/CS
/RAS
52
Self Refresh (Entry and Exit)
;;;;;;;;;;
;;;
;
;
;
;
;;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
T0
T1
T2
T3
T4
Tn
Tn+1
Tn+2
Tm
Tm+1
Tm+2
Tk
Tj
Tj+1
Tj+2
CLK
/CLK
CKE
/CS
/RAS
/WE
BA0
BA1
A10
ADD
DM
Hi-Z
DQS VTT
Hi-Z
DQ
VTT
Precharge
Command
is necessary
Self Refresh
Entry
tRP
Self Refresh Self Refresh
Entry
Exit
(or Activate Command)
Self Refresh
Exit
tXSNR
Next Clock
Enable
Activate
Command
tXSNR
Next Clock
Enable
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Random Column Read (Page with Same Bank) (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
;;;;
;;;;
;;;
;
;
;;
;
;
;;
;;;;
;
;;
;;
;
;;
;
;
;;
;
;;
;
;;
;
;
;;
;;;;
;
;;
;;
;
;;
;
;
;;
;
;;
;
;;
;
;
;;
;;;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;
;
;
;;
;
;;;;;
;
;;
;
;
;;
;;
;
;
;;
;
;;
;
;;
;
;
;;
;;;;
;
;;
;;
;;
;
;;
;
;
;
;;
;
;
;;
;
;;
;;;;
;
;;
;;
;
;;
;
;
;
;
;;
;;;
;;
;
;
;;
;
;;;;
;
;;
;;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;;;;
;
;;
;
;;
;;
;
;
;;
;
;;
;;;;
;
;;
;
;
;;
;
;;
CLK
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RAd
CAa
CAb
CAc
RAd
CAd
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
53
Activate
Command
for Bank A
QAa1 QAa2 QAa3 QAa4 QAb1 QAb2 QAc1 QAc2 QAc3 QAc4
Read
Command
for Bank A
Read
Read
Command Command
for Bank A for Bank A
Precharge
Command
for Bank A
Activate
Command
for Bank A
QAd1 QAd2 QAd3 QAd4
Read
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
54
Random Column Read (Page with Same Bank) (2/2) (Burst Length = 4, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
;;
;;;;
;;;
;;;
;
;;
;
;
;
;;
;
;
;;
;;
;
;
;
;;
;
;
;;
;;
;
;
;
;;
;
;
;;
;;
;
;
;
;;
;
;
;;
;
;
;;
;;
;
;
;
;
;;
;
;;
;;
;
;
;
;
;;
;
;;
;;
;
;
;
;
;;
;
;;
;;
;
;
;
;
;;
;;
;
;;
;
;
;
;
;;
;;
;
;;
;
;
;
;
;
;;
;
;;
;
;;
;
;
;
;
;;
;;
;
;;
;
;
;
;
;;
;;
;
;
;;
;
;
;
;;
;;
;
;
;;
;
;
;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;
;
;;
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
RAa
ADD
RAa
CAa
CAb
CAc
RAa
CAa
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
QAa1 QAa2 QAa3 QAa4 QAb1 QAb2 QAc1 QAc2 QAc3 QAc4
Read
Command
for Bank A
Read
Read
Command Command
for Bank A for Bank A
Precharge
Command
for Bank A
Activate
Command
for Bank A
QAd1 QAd2 QAd3 QAd4
Read
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Random Column Write (Page with Same Bank) (1/2) (Burst Length = 4, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RDa
ADD
RDa
RDd
CDa
CDb
CDc
RDd
CDd
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank D
DDa1 DDa2 DDa3 DDa4 DDb1 DDb2 DDc1 DDc2 DDc3 DDc4
Write
Command
for Bank D
Write
Command
for Bank D
55
Write
Command
for Bank D
DDd1 DDd2 DDd3 DDd4
Precharge
Command
for Bank D
Activate
Command
for Bank D
Write
Command
for Bank D
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
56
Random Column Write (Page with Same Bank) (2/2) (Burst Length = 4, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
CKE
H
/CS
/RAS
/WE
BA0
BA1
A10
RDa
ADD
RDa
RDd
CDa
CDb
CDc
RDd
CDd
L
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank D
DDa1 DDa2 DDa3 DDa4 DDb1 DDb2 DDc1 DDc2 DDc3 DDc4
Write
Command
for Bank D
Write
Command
for Bank D
Write
Command
for Bank D
DDd1 DDd2 DDd3 DDd4
Precharge
Command
for Bank D
Activate
Command
for Bank D
Write
Command
for Bank D
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Random Row Read (Ping-Pong Banks) (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
;;;;;;;;;;;
;
;
;;
;
;;;;;
;;
;
;;
;
;
;
;;
;
;;
;
;
;
;;
;
;;;;;
;;
;
;;
;
;
;;
;
;
;;
;
;
;
;;
;
;;;;;
;;
;
;;
;
;
;
;;
;
;;
;
;
;
;;
;
;;;;;
;;
;
;;
;
;;
;
;;
;;;;;;
;;;;
;
;;;;
;;
;
;;
;
;
;;
;
;;
;
;;;
;
;
;;
;
;;;;
;;
;
;
;
;
;;
;
;;
;
;;;
;
;
;;
;
;;;;
;;
;
;;
;
;
;
;
;;
;;
;
;
;
;;
;
;;;;;
;;
;
;
;
;
;;
;;
;
;
;;;;
;;;
;
;
;;
;;
;
;
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RDa
ADD
RDa
RDb
RBa
CDa
RBa
CBa
RDb
CDb
DM
DQS VTT
DQ
VTT
Hi-Z
Hi-Z
QDa1 QDa2 QDa3 QDa4 QDa5 QDa6 QDa7 QDa8 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QBa8
Activate
Command
for Bank D
Read
Command
for Bank D
Activate
Command
for Bank B
Read
Command
for Bank B
57
Precharge
Command
for Bank D
Activate
Command
for Bank D
QDb1 QDb2 QDb3 QDb4 QDb5 QDb6 QDb7 QDb8
Read
Command
for Bank D
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
58
Random Row Read (Ping-Pong Banks) (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
;
;;
;;;
;;;
;;;
;;;;
;;
;
;
;
;;
;
;;
;;
;
;;
;
;
;;
;
;;
;;;;
;;
;
;
;
;
;;
;;
;
;;
;
;
;;
;
;;
;
;;;;;;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;;;;
;;
;
;
;
;;
;
;;
;
;
;;
;;
;
;
;
;
;;;;;
;;
;
;
;;
;
;
;
;;
;
;
;
;;;;
;;
;
;;;;;;
;;;
;
;
;;
;
;
;
;
;;
;;
;
;;;;;
;;
;
;;
;
;
;
;;
;
;;
;
;;
;
;
;
;;;;;
;;
;
;;
;
;
;
;
;;
;
;
;;
;
;
;;;;
;;;
;;
;
;
;;
;
;
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RBa
ADD
RBa
RAa
CBa
RAa
RBb
CAa
RBb
CBb
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
QBb1 QBb2 QBb3 QBb4 QBb5 QBb6 QBb7
QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 QBa8 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QAa8
Activate
Command
for Bank B
Read
Command
for Bank B
Activate
Command
for Bank A
Read
Command
for Bank A
Precharge
Command
for Bank B
Activate
Command
for Bank B
Read
Command
for Bank B
Precharge
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Random Row Write (Ping-Pong Banks) (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
;;;;;;
;;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;;
;;;;;;;;;;;;
;;;;;;;;;;;;
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDa
RAb
RAb
CDa
CAb
L
DM
Hi-Z
DQS
VTT
DQ
VTT
Hi-Z
Activate
Command
for Bank A
DAa1 DAa2 DAa3 DAa4 DAa5 DAa6 DAa7 DAa8 DDa1 DDa2 DDa3 DDa4 DDa5 DDa6 DDa7 DDa8
Write
Command
for Bank A
Activate
Command
for Bank D
Write
Command
for Bank D
Precharge
Command
for Bank A
Activate
Command
for Bank A
DAb1 DAb2 DAb3 DAb4 DAb5 DAb6 DAb7 DAb8
Write
Command
for Bank A
59
Precharge
Command
for Bank D
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
60
Random Row Write (Ping-Pong Banks) (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
CLK
/CLK
CKE
H
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RAb
RDa
RDa
CAa
RAb
CDa
CAb
L
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
DAa1 DAa2 DAa3 DAa4 DAa5 DAa6 DAa7 DAa8 DDa1 DDa2 DDa3 DDa4 DDa5 DDa6 DDa7 DDa8
DAb1 DAb2 DAb3 DAb4 DAb5 DAb6 DAb7 DAb8
Hi-Z
Activate
Command
for Bank A
Write
Command
for Bank A
Activate
Command
for Bank D
Write
Command
for Bank D
Precharge
Command
for Bank A
Activate
Command
for Bank A
Precharge
Command
for Bank D
Write
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Read and Write (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
CKE
H
;;;;;
;;;;;
;;
;
;;;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;;;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;;;
;
;;
;;
;
;;
;
;
;
;
;;
;;
;
;;;;;;
;;;
;;
;
;
;;
;
;;;
;
;;
;;
;
;
;;
;
;;;
;
;;
;;
;
;
;;
;
;;;
;
;;
;;
;
;
;;
;
;;;
;;
;
;;
;;
;
;
;;
;
;;;
;;
;
;;
;;
;
;;
;
;;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAb
CAa
CAc
DM
Word Masking
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QAa8
Read
Command
for Bank A
Hi-Z at the end of
wrap function
DAb1
QAc1 QAc2 QAc3 QAc4 QAc5 QAc6 QAc7 QAc8
DAb3 DAb4 DAb5 DAb6 DAb7 DAb8
Write
Command
for Bank A
61
0-Clock Latency
Read
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
62
Read and Write (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
;;;;;
;;
;;;;;;
;;
;
;
;;
;;
;
;;
;
;
;;
;;
;
;;
;
;;;;;
;
;;
;
;
;;
;;
;
;;
;
;
;;
;;
;
;;
;;;;;
;;
;
;
;;
;;
;
;;
;
;;
;;
;
;;
;;;;;
;
;;
;
;
;
;;
;
;
;
;;;;;;
;;;
;;
;;
;;;;
;
;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;;;;
;
;
;
;;
;;
;
;;
;
;;;
;
;;
;;
;
;;
;
;;;;
;
;
;
;;
;
;;
;
;;
;;
;
;
;;
;;
;;
;
;;;;;
;
;
;;
;
;
;;
;
;;;;
;;;;;;
;;;
;;
;
;;
;
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
CAb
CAa
CAc
DM
Word Masking
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QAa8
Read
Command
for Bank A
DAb1
QAc1 QAc2 QAc3
DAb3 DAb4 DAb5 DAb6 DAb7 DAb8
Write
Command
for Bank A
Read
Command
for Bank A
0-Clock Latency
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Interleaved Column Read Cycle (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
H
CKE
/CS
;;;;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;;;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDa
CDa
CDb
CDc
CAb
CDd
DQM
Hi-Z
DQS
VTT
DQ
VTT
Hi-Z
Activate
Command
for Bank A
Aa1 Aa2 Aa3 Aa4 Aa5 Aa6 Aa7 Aa8 Da1 Da2 Da3 Da4 Db1 Db2 Db3 Db4 Dc1 Dc2 Dc3 Dc4 Ab1 Ab2 Ab3 Ab4 Dd1 Dd2 Dd3 Dd4 Dd5 Dd6 Dd7 Dd8
Read
Command
for Bank A
63
Activate
Command
for bank D
Read
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank A
Read
Command
for Bank D
Precharge
Command
for Bank A
Precharge
Command
for Bank D
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
64
Interleaved Column Read Cycle (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
;;;;;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
;
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDa
CDa
CDb
CDc
CAb
L
DQM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
Aa1 Aa2 Aa3 Aa4 Aa5 Aa6 Aa7 Aa8 Da1 Da2 Da3 Da4 Db1 Db2 Db3 Db4 Dc1 Dc2 Dc3 Dc4 Ab1 Ab2 Ab3 Ab4 Ab5 Ab6 Ab7 Ab8
Read
Command
for Bank A
Activate
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank D
Read
Command
for Bank A
Precharge
Command
for Bank D
Precharge
Command
for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Interleaved Column Write Cycle (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
CLK
/CLK
CKE
H
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RBa
CAa
RBa
CBa
CBb
CBc
CAb
CBd
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Aa1 Aa2 Aa3 Aa4 Aa5 Aa6 Aa7 Aa8 Ba1 Ba2 Ba3 Ba4 Bb1 Bb2 Bb3 Bb4 Bc1 Bc2 Bc3 Bc4 Ab1 Ab2 Ab3 Ab4 Bd1 Bd2 Bd3 Bd4 Bd5 Bd6 Bd7 Bd8
Activate
Command
for Bank A
Write
Command
for Bank A
Write
Command
for Bank B
65
Activate
Command
for Bank B
Write
Command
for Bank B
Write
Command
for Bank B
Write
Command
for Bank A
Write
Command
for Bank B
Precharge
Command
for Bank A
Precharge
Command
for Bank B
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
66
Interleaved Column Write Cycle (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
T23
CLK
/CLK
H
CKE
/CS
/RAS
/WE
BA0
BA1
A10
RAa
ADD
RAa
RBa
CAa
RBa
CBa
CBb
CBc
CAb
CBd
DQM
Hi-Z
DQS
VTT
DQ
VTT
Hi-Z
Activate
Command
for Bank A
Aa1 Aa2 Aa3 Aa4 Aa5 Aa6 Aa7 Aa8 Ba1 Ba2 Ba3 Ba4 Bb1 Bb2 Bb3 Bb4 Bc1 Bc2 Bc3 Bc4 Ab1 Ab2 Ab3 Ab4 Bd1 Bd2 Bd3 Bd4 Bd5 Bd6 Bd7 Bd8
Write
Command
for Bank A
Activate
Command
for Bank B
Write
Command
for Bank B
Write
Command
for Bank B
Write
Command
for Bank B
Write
Command
for Bank A
Write
Command
for Bank B
Precharge
Command
for Bank A
Precharge
Command
for Bank B
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/CAS
Auto Precharge after Read Burst (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
;;;;
;;
;;;
;;
;
;;
;
;
;
;
;;
;
;;
;
;
;
;
;;
;
;;
;
;
;
;
;;
;
;
;;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;;
;;
;
;
;
;
;
;
;;
;;
;
;
;
;
CLK
/CLK
CKE
H
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDb
RDa
CDa
CAb
RDb
RAc
CDb
RAc
CAc
DM
Hi-Z
DQS
VTT
DQ
VTT
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Bank A
Read Command
without Auto Precharge
Bank D
Read Command
with Auto Precharge
Bank A
Read Command
with Auto Precharge
67
Auto Precharge
Start for Bank D
Activate
Command
for Bank D
Auto Precharge
Start for Bank A
Activate
Command
for Bank A
Auto Precharge
Start for Bank D
Bank D
Read Command
with Auto Precharge
Bank A
Read Command
with Auto Precharge
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
68
Auto Precharge after Read Burst (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
;;;;;
;;;;
;
;;
;
;;
;
;
;;;;
;
;
;;
;
;
;
;;
;
;;
;
;
;;;;
;
;
;
;
;;
;
;;
;;
;
;
;
;;;;
;
;;
;
;
;
;
;
;
;;
;;
;
;;;;
;
;;
;
;
;
;
;;
;;
;
;
;
;;;;
;
;;
;
;
;
;
;;
;;
;
;
;
;;;;
;
;;
;
;
;
;
;;
;;
;
;
;
;;;;
;
;;
;
;
;
;
;;
;;
;
;
;
;;;;
;;
;
;
;
;
/CLK
CKE
H
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDa
RDb
CDa
CAb
RDb
CDb
DM
DQS VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Bank A
Read Command
without Auto Precharge
Bank A
Read Command
with Auto Precharge
Bank D
Read Command
with Auto Precharge
Auto Precharge
Start for Bank D
Auto Precharge
Start for Bank A
Activate
Command
for Bank D
Bank D
Read Command
with Auto Precharge
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
Auto Precharge after Write Burst (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
CLK
/CLK
CKE
H
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
DM
RDa
CAa
RDb
RDa
CDa
CAb
RDb
RAc
CDb
RAc
CAc
L
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Bank A
Write Command
without Auto Precharge
Bank D
Write Command
with Auto Precharge
Activate
Command
for Bank A
Activate
Command
for Bank D
Bank A
Write Command
with Auto Precharge
Bank D
Write Command
with Auto Precharge
69
Auto Precharge
Start for Bank D
Bank A
Write Command
with Auto Precharge
Auto Precharge
Start for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
70
Auto Precharge after Write Burst (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
CLK
/CLK
H
CKE
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
RDa
CAa
RDa
RDb
CDa
CAb
RDb
CDb
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
Activate
Command
for Bank A
Activate
Command
for Bank D
Bank A
Write Command
without Auto Precharge
Bank A
Write Command
with Auto Precharge
Activate
Command
for Bank D
Bank D
Write Command
with Auto Precharge
Auto Precharge
Start for Bank D
Bank D
Write Command
with Auto Precharge
Auto Precharge
Start for Bank A
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
Byte Write Operation (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
;;;;;
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CLK
/CLK
H
CKE
/CS
/RAS
/CAS
BA0
BA1
A10
ADD
LDM
UDM
Hi-Z
LDQS
VTT
UDQS
VTT
Lower DQ
VTT
Upper DQ
VTT
Hi-Z
Hi-Z
Hi-Z
Activate
Command
Read
Command
Lower Byte
Lower Byte
not Write
not Write
Upper Byte
not Write
71
Read
Command
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
72
PRE (Precharge) Termination of Burst (1/2) (Burst Length = 8, /CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
/CLK
;;;;;;
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;;;;;;;;;;;;
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H
CKE
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
RAb
CAa
RAb
RAc
CAb
RAc
Write
Mask
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
QAb1 QAb2 QAb3 QAb4 QAb5 QAb6
DAa1 DAa2 DAa3 DAa4
Activate
Command
for Bank A
Write
Command
for Bank A
Read
Command
for Bank A
Precharge
PRE Command Command
for Bank A
Termination
tRAS
Precharge
Command
for Bank A
Activate
Command
for Bank A
Activate
Command
for Bank A
tRP
tRAS
tRP
PRE Command
Termination
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
PRE (Precharge) Termination of Burst (2/2) (Burst Length = 8, /CAS Latency = 2.5)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
CLK
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/CLK
CKE
H
/CS
/RAS
/CAS
BA0
BA1
A10
RAa
ADD
RAa
RAb
CAa
RAb
RAc
CAb
RAc
Write
Mask
DM
DQS
VTT
DQ
VTT
Hi-Z
Hi-Z
QAb1 QAb2 QAb3 QAb4 QAb5 QAb6
DAa1 DAa2 DAa3 DAa4
Activate
Command
for Bank A
Write
Command
for Bank A
PRE Command
Termination
73
tRAS
Read
Command
for Bank A
Precharge
Command
for Bank A
Activate
Command
for Bank A
tRP
tRAS
Precharge
Command
for Bank A
Activate
Command
PRE Command for Bank A
Termination
tRP
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
Preliminary Data Sheet E0136E30
/WE
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
14. Package Drawing
66-PIN PLASTIC TSOP (II) (10.16 mm (400))
detail of lead end
66
34
F
G
R
P
L
S
1
E
33
A
H
I
J
S
C
D
M
N
L
S
K
M
B
NOTES
1. Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
2. Dimension "A" does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.15mm per side.
ITEM
A
MILLIMETERS
22.22±0.05
B
0.865 MAX.
C
0.65 (T.P.)
D
0.24+0.08
−0.07
E
0.10±0.05
F
1.1±0.1
G
1.00
H
11.76±0.20
I
10.16±0.10
J
0.80±0.2
K
0.145+0.025
−0.015
L
0.50
M
0.12
N
0.10
P
3°+5°
−3°
R
0.25
S
0.60±0.15
S66G5-65-9LG-1
74
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
15. Recommended Soldering Conditions
Please contact our sales offices for soldering conditions of EDD12xxALTA.
Type of Surface Mount Device
EDD12xxALTA: 66-pin Plastic TSOP (II) (10.16 mm (400))
Preliminary Data Sheet E0136E30
75
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
16. Revision History
Version /
Date
Ver. 1.0 /
Page
Description
This edition
Previous
edition
Type of
revision
Location
—
—
—
—
April. 2001
—
—
—
—
Ver. 2.0 /
27
27
Modification
Figure of Write to Precharge Command Interval
May. 2001
29
29
Modification
Figure of Write with Auto precharge
36
36
Modification
Figure of Precharge Termination in Write Cycle
41
41
Modification
tCK (CL = 2.5) (MIN.) : 8 ns to 10 ns
42
42
Modification
tWR (MIN.) : 15/15/15 ns to 2/2/2 CLK
46
46
Modification
AC Parameters for Write Timing
55
55
Modification
Random Column Write (1/2)
56
56
Modification
Random Column Write (2/2)
60
60
Modification
Random Row Write (2/2)
65
65
Modification
Interleaved Column Write Cycle (1/2)
66
66
Modification
Interleaved Column Write Cycle (2/2)
69
69
Modification
Auto Precharge after Write Burst (1/2)
Auto Precharge after Write Burst (2/2)
70
70
Modification
Ver. 3.0
38
38
Addition
DC Characteristics specification
October 2001
39
39
Modification
VIH (ac) (MIN.): VREF + 0.35 to VREF + 0.31
41
41
Modification
tHP (MIN.): tCH, tCL to MIN. (tCH, tCL)
42
42
Modification
tWPRE (MIN.) (tCK = 7.5ns): 0.25 ns to 1.88 ns
42
42
Modification
tDAL (MIN.): TBD to 35 ns
45
45
Modification
[tDAL]:  to 5/5/5/4/4/4
VIL (ac) (MAX.): VREF + 0.35 to VREF - 0.31
76
Preliminary Data Sheet E0136E30
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0136E30
77
EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
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compliance with the relevant laws and regulations.
M01E0107