EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement • Ultrafast reverse recovery time for high frequency • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ ~ ~ TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Case Style DFS PRIMARY CHARACTERISTICS Package DFS IF(AV) 1A VRRM 50 V, 100 V, 150 V, 200 V IFSM 50 A IR 5 μA VF at IF = 1.0 A 1.05 V trr 50 ns TJ max. 150 °C Diode variations Quad MECHANICAL DATA Case: DFS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 106 140 V 50 100 150 200 Maximum DC blocking voltage VDC Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A I2t 10 A2s TJ, TSTG - 55 to + 150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range V Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode TEST CONDITIONS 1.0 A (1) Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 125 °C SYMBOL VF IR trr EDF1AS EDF1BS 1.05 EDF1CS EDF1DS UNIT V 5.0 μA 1.0 mA 50 ns Note (1) Pulse test: 300 ms pulse width, 1 % duty cycle Revision: 19-Aug-13 Document Number: 88578 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) EDF1AS EDF1BS EDF1CS RJA 38 RJL 12 EDF1DS UNIT °C/W Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EDF1DS-E3/45 0.406 45 50 Tube EDF1DS-E3/77 0.406 77 1500 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 IPK/IAV = π Resistive or Inductive Load 0.75 0.51 x 0.51" (13 x 13 mm) Copper Pads 0.5 Capacitive Loads 5.0 Ipk = 10 IAV 20 0.25 Instantaneous Forward Current (A) Average Forward Output Current (A) 1.0 0 20 40 60 100 80 120 140 1 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 160 Ambient Temperature (°C) Fig. 1 - Derating Curves Output Rectified Current 50 40 30 20 1.0 Cycle 0 10 100 Number of Cycles at 60 Hz Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Aug-13 1.0 1.2 1.4 1000 Instantaneous Reverse Leakage Current (µA) Peak Forward Surge Current (A) TJ = 150 °C Single Sine-Wave 1 0.8 Fig. 3 - Typical Forward Characteristics Per Diode 60 10 0.6 Instantaneous Forward Voltage (V) 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Document Number: 88578 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EDF1AS, EDF1BS, EDF1CS, EDF1DS www.vishay.com Vishay General Semiconductor Junction Capacitance (pF) 30 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 20 15 10 5 0 0.1 10 1 100 1000 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS Mounting Pad La yout 0.205 (5.2) 0.195 (5.0) 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.404 MAX. (10.26 MAX.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45° 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) Revision: 19-Aug-13 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.003 (0.076) Document Number: 88578 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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