NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device containing a low power 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/lowpower circuit technology. This device is designed for very low voltage operation making it quite suitable for battery powered devices. It is also designed for both very low operating and standbycurrents. The device pinout is compatible with other standard 128Kx8 SRAMs. • • • Wide Voltage Range: 2.3 to 3.6 Volts Extended Temperature Range: -40 to +85 o C • Fast Cycle Time: TACC < 55 ns @ 3.0V Very Low Operating Current: ICC < 10 mA typical at 3V, 10 Mhz Very Low Standby Current: • ISB < 10 µA @ 55 o C 32-Pin TSOP, STSOP, Packages Available • FIGURE 1: Typical Operating Current Curves 12.5 10.0 Typical ICC 3.6 Volts 7.5 2.3 Volts 5.0 2.5 0.0 0 2.5 5.0 7.5 10.0 12.5 15.0 Operating Frequency (Mhz) Stock No. 23033-A Advance Information - Subject to Change Without Notice 1 EM128L08 Advance Information NanoAmp Solutions, Inc. FIGURE 1: Pin Configuration A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 EM128L08 STSOP, TSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3 FIGURE 2: Functional Block Diagram Address Inputs A0 - A16 Address Decode Logic CE WE OE Control Logic Input/ Data I/O Output Mux and D0 - D 7 Buffers 128K x 8 RAM Array TABLE 1: Pin Description Pin Name Pin Function Pin Name Pin Function A0-A16 Address Inputs WE Write Enable (Active Low) D0-D7 Data Inputs/Outputs VCC Power CE Chip Enable (Active Low) VSS Ground OE Output Enable (Active Low) NC Not Connected (Do not connect signal) TABLE 2: Functional Description CE1 CE2 WE OE D0-D7 MODE POWER H X X X High Z Standby Standby X L X X High Z Standby Standby L H L X Data In Write Active -> Standby* L H H L Data Out Read Active -> Standby* L H H H High Z Active Standby* *The device will consume active power in this mode whenever addresses are changed Stock No. 23033-A Advance Information - Subject to Change Without Notice 2 EM128L08 Advance Information NanoAmp Solutions, Inc. TABLE 3: Absolute Maximum Ratings* Item Symbol Rating Unit VIN,OUT –0.3 to VCC +0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.0 V Power Dissipation PD 500 mW T STG –40 to 125 o TA -40 to +85 o 260 C, 10sec(Lead only) o Voltage on any pin relative to VSS Storage Temperature Operating Temperature Soldering Temperature and Time * T SOLDER C C o C Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. TABLE 4: Operating Characteristics (Over specified Temperature Range) Item Symbol Test Conditions Min Typ Max Unit 3.6 V Supply Voltage VCC Data Retention Voltage VDR 1.8 3.6 V Input High Voltage VIH 0.7VCC VCC +0.5 V Input Low Voltage VIL –0.5 0.3VCC V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VO L IOL = -0.2mA 0.2 V Input Leakage Current I LI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = V IH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µS Cycle Time ICC1 VCC=3.6 V, V IN=VIH or VIL Chip Enabled, IOL = 0 3.0 mA Read/Write Operating Supply Current @ 70 nS Cycle Time ICC2 VCC=3.6 V, V IN=VIH or VIL Chip Enabled, IOL = 0 14.0 mA Read/Write Quiescent Operating Supply Current (Note 1) ICC3 VIN = V CC or 0V Chip Enabled, IOL = 0 f = 0, t A= 85oC, VCC = 3.3 V 20 µA 10 µA 20 µA 10 µA 2.3 Chip Disabled (Note 3) Operating Standby Current (Note 1) I SB1 VIN = V CC or 0V Chip Disabled tA = 55o C, VCC = 3.3V Maximum Standby Current (Note 1) I SB2 VIN = V CC or 0V Chip Disabled tA = 85o C, VCC = 3.3V Maximum Data Retention Current (Note 1) I DR Note 1. VCC –0.2 Vcc = 2.0V, VIN = VCC or 0 Chip Disabled, tA = 85o C V This device assumes a standby mode if either CE1 is disabled (high) or CE2 is disabled (low). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) regardless of the state of CE1 or CE2. In order to achieve low standby current in the enabled mode (CE1 low and CE2 high), all inputs must be within 0.2 volts of either V CC or V SS . Stock No. 23033-A Advance Information - Subject to Change Without Notice 3 EM128L08 Advance Information NanoAmp Solutions, Inc. TABLE 5: Timing Test Conditions Item Input Pulse Level 0.1V CC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load Operating Temperature CL = 30pF -40 to +85 o C TABLE 6: Timing 2.3 - 3.6 V Item 3.0 - 3.6 V Symbol Units Min. Max. Min. Max. Read Cycle Time tRC Address Access Time tAA 70 55 ns Chip Enable to Valid Output tCO 70 55 ns Output Enable to Valid Output tO E 25 20 ns Chip Enable to Low-Z output t LZ 10 10 ns Output Enable to Low-Z Output tOLZ 5 5 ns Chip Disable to High-Z Output tHZ 0 20 0 15 ns Output Disable to High-Z Output tOHZ 0 20 0 15 ns Output Hold from Address Change tOH 10 10 ns Write Cycle Time tWC 70 55 ns Chip Enable to End of Write tCW 50 45 ns Address Valid to End of Write t AW 50 45 ns Write Pulse Width t WP 40 35 ns Address Setup Time tAS 0 0 ns Write Recovery Time tWR 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 40 35 ns Data Hold from Write Time tDH 0 0 ns End Write to Low-Z Output tOW 5 5 ns Stock No. 23033-A 70 55 20 Advance Information - Subject to Change Without Notice ns 15 ns 4 EM128L08 Advance Information NanoAmp Solutions, Inc. FIGURE 3: Read Cycle Timing (WE = VIH ) tRC A0-A16 tAA tHZ tCE CE1/CE2 Enable Valid tLZ tOHZ tOE OE tOLZ tOH D0-D7 Data Valid FIGURE 4: Write Cycle Timing (OE clock) tWC A0-A16 tWR tAW OE tCW Enable Valid CE1/CE2 tWP WE tWHZ tAS tDW Data Data In tOHZ Data Out Stock No. 23033-A tDH tOW High-Z Advance Information - Subject to Change Without Notice 5 EM128L08 Advance Information NanoAmp Solutions, Inc. FIGURE 5: Write Cycle Timing (OE fixed) tWC A0-A16 tWR tAW tCW CE1/CE2 Enable Valid tWP tAS tOH WE tDH tDW Data Valid Data In tWHZ Data Out Stock No. 23033-A tOW High-Z Advance Information - Subject to Change Without Notice 6 EM128L08 Advance Information NanoAmp Solutions, Inc. TABLE 7: Ordering Information Part Number Package Temperature Range Voltage Range Speed EM128L08T 32 pin TSOP -40 to +85 oC 2.3 to 3.6 V 55 ns @ 3.0 V 2.3 to 3.6 V 55 ns @ 3.0 V EM128L08N 32 pin STSOP o -40 to +85 C TABLE 8: Revision History Revision # Date A Jan. 2001 Stock No. 23033-A Change Description Initial Advance Release Advance Information - Subject to Change Without Notice 7