ESAC33M(C,N,D) (8A) (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Insulated package by fully molding High voltage by mesa design SC-67 Connection diagram High reliability 2 Applications ESAC33M- C 1 ESAC33M- N 1 ESAC33M- D 1 3 2 High speed switching 3 2 Maximum ratings and characteristics 3 Absolute maximum ratings Item Symbol Rating Conditions -02 Unit Repetitive peak reverse voltage VRRM 200 V Non-repetitive peak reverse voltage VRSM 200 V Average output current IO Square wave, duty=1/2, Tc=95°C Surge current IFSM Sine wave 10ms Operating junction temperature Storage temperature 8* A 30 A Tj -40 to +150 °C Tstg -40 to +150 °C *Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Max. Unit Forward voltage drop VFM IFM=2.0A Reverse current IRRM VR=VRRM 500 µA Reverse recovery time t rr IF=0.1A, IR=0.1A 100 ns Thermal resistance Rth(j-c) Junction to case 1.4 3.5 V °C/W ESAC33M(C,N,D)(8A) (200V / 8A ) Characteristics Reverse characteristics Forward characteristics 10 10 5 1.0 3 IR IF [A] [µA] 1 0.1 0.5 0.01 0.005 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 100 200 300 VR [V] VF [V] Forward power dissipation Output current-case temperature 12 140 10 120 8 Tc WF 6 [W] [°C] 100 4 80 2 60 0 0 1 2 3 4 5 0 6 2 4 Io [A] 6 8 10 Io [A] Junction capacitance characteristics Surge capability 100 30 50 30 10 Cj IFSM [pF] [A] 5 10 3 5 3 1 5 10 30 VR [V] 50 100 1 3 5 10 [time] (at 50Hz) 30 ESAC33M(C,N,D)(8A) (200V / 8A ) Transient thermal impedance 101 [°C/W] 100 10-1 10-3 10-2 10-1 t [sec.] 100 101 102