MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF(AV) Average forward current ....................... 500A ¡VRRM Repetitive peak reverse voltage ................... 4500V ¡QRR Reverse recovery charge ................. 1500µC ¡Press pack type φ3.5 ± 0.2 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj T stg — — Parameter Voltage class Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage 4500 4500 3600 V V V Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Junction temperature Storage temperature Mounting force required Weight Conditions Applied for all conduction angles f = 60Hz, sine wave θ = 180°, Tf =76°C One half cycle at 60Hz, Tj =125°C IFM =500A, VR ≤ 2250V, Tj = 125°C (Fig. 1 and Fig. 2) (Recommended value 23.5kN) Typical 530g Ratings 785 500 10 4.2× 105 Unit A A kA A2s 2000 A/µs –20 ~ 125 –40 ~ 150 22 ~ 28 — °C °C kN g Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol I RRM VFM QRR Erec tb/ta VFP Rth(j-f) Parameter Limits Test conditions Repetitive peak reverse current Forward voltage Reverse recovery charge Reverse recovery loss Soft recovery rate Forward recovery voltage Thermal resistance VRM = 4500V, Tj = 125°C IFM = 1570A, T j = 125°C IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C (Refer to Fig. 1 and Fig. 2) di/dt = 1000A/µs, Tj = 25°C Junction to fin Fig. 1 (Definition of reverse recovery waveform) Min. — — — — — — — Typ. — — — 4.0 2 100 — Unit Max. 80 3.5 1500 — — — .027 mA V µC J/P — V °C/W Fig. 2 (Reverse recovery test circuit) QRR = (trr × IRM)/2 L(line) di/dt(0~50%IFM) (Note 1) 50%IFM IFM ta L(load) FD500JV Rc VD = 2250V trr tb CDi 0 GCT Cc IRM Cc : 6µF Rc = 2Ω 50%IRM 90%IRM di/dt = VD/L(line) = 2250V/1.125µH = 2000A (Note 1) Note 1 In case of 2000A/µs, definition of di/dt is by VD and inductance value of L (line) as follows. d i/dt = VD/L (line) = 2250V/1.125µH = 2000A/µs Feb.1999 MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE MAXIMUM FORWARD CHARACTERISTICS 104 7 5 3 Tj = 125°C 2 103 7 5 3 2 Tj = 25°C 102 7 5 3 2 101 0 1 2 3 4 5 6 7 8 Erec VS IF (TYP.) REVERSE RECOVERY LOSS Erec (J/P) FORWARD CURRENT (A) PERFORMANCE CURVES 10 7 6 5 4 3 2 1 0 200 400 600 800 1000 1200 MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.04 THERMAL IMPEDANCE (°C/ W) REVERSE RECOVERY CHARGE QRR (µC) 0 FORWARD CURRENT IF (A) QRR VS IF (TYP.) 800 VR = 2250V, Tj =125°C 8 di/dt = 1000A/µs FORWARD VOLTAGE (V) 2600 CONDITION 2400 2200 VR = 2250V, Tj =125°C di/dt = 1000A/µs 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 CONDITION 9 1000 1200 FORWARD CURRENT IF (A) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Feb.1999