MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF(AV) Average forward current ........................800A ● VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V ● QRR Reverse recovery charge ................. 1500µC ● Press pack type 0.4 MIN `'39 φ 60 φ 102 MAX M5 ✕ 0.8 DEPTH 2.5 APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight Voltage class 80 4000 4000 3200 70 3500 3500 2800 Unit 90 4500 4500 3600 Conditions V V V Ratings 1250 800 20 1.7 × 106 –40 ~ +125 –40 ~ +150 26.5 ~ 43.1 700 f = 60Hz, sine wave θ = 180°, Tf = 88°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz Recommended value 39.2 Standard value Unit A A kA A 2s °C °C kN g ELECTRICAL CHARACTERISTICS Parameter Test conditions IRRM VFM Repetitive peak reverse current Forward voltage QRR Reverse recovery charge Rth(j-f) Thermal resistance Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 2500A, Instantaneous measurement IFM = 800A, diF/dt = –30A/µs, VR = 150V, Tj = 125°C Junction to fin Symbol Min — — Limits Typ — — Max 150 3.0 — — 1500 µC — — 0.017 °C/W Unit mA V Aug.1998 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE MAXIMUM FORWARD CHARACTERISTICS 105 7 5 3 2 Tj = 125°C 104 7 5 3 2 Tj = 25°C 103 7 5 3 2 102 0 RATED SURGE FORWARD CURRENT SURGE FORWARD CURRENT (kA) FORWARD CURRENT (A) PERFORMANCE CURVES 20 16 12 8 4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 1 2 3 FORWARD VOLTAGE (V) 3200 POWER DISSIPATION (W) 0.016 0.012 0.008 0.004 RESISTIVE, INDUCTIVE LOAD 2800 THREE-PHASE HALF WAVE, 2400 FULL WAVE RECTIFICATION 2000 CIRCUIT DC CIRCUIT 1600 1200 SINGLE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 800 400 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 0 400 0 800 1200 1600 AVERAGE FORWARD CURRENT (A) ALLOWABLE FIN TEMPERATURE VS. AVERAGE FORWARD CURRENT REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. JUNCTION TEMPERATURE 130 RESISTIVE, INDUCTIVE LOAD 120 SINGLE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 110 100 DC CIRCUIT 90 THREE-PHASE 80 HALF WAVE, FULL WAVE 70 RECTIFICATION CIRCUIT 60 0 400 800 1200 1600 AVERAGE FORWARD CURRENT (A) REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) TIME (S) 104 7 IFM = 800A 5 3 diF/dt = –30A/µs 2 VRM = 150V 103 MAX. AV. QRR 7 5 3 2 VAK • iA THERMAL IMPEDANCE (°C/W) 50 70100 MAXIMUM POWER DISSIPATION CHARACTERISTICS 100 2 3 5 7 101 0.020 50 20 30 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) FIN TEMPERATURE (°C) 5 7 10 102 7 5 3 2 + IFM diF/dt trr t VRM 0 – Irm QRR = trr Irm 2 trr 101 7 5 3 2 100 MAX. AV. 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Aug.1998 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 2 MAX. QRR AV. trr MAX. 101 7 5 3 2 AV. QRR = trr Irm 2 + IFM diF/dt trr t VRM 0 – Irm 100 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 FORWARD CURRENT (A) 104 7 IFM = 800A 5 VRM = 150V 3 Tj = 125°C 2 MAX. MAX. AV. 2 101 7 5 3 2 QRR AV. 103 7 5 trr IFM VAK • iA 103 7 5 REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) 104 7 diF/dt = –30A/µs 5 VRM = 150V 3 Tj = 125°C 2 VAK • iA REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. FORWARD CURRENT + 0 – diF/dt trr t VRM Irm QRR = trr Irm 2 100 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECREASE OF REVERSE CURRENT (A/µS) Aug.1998