MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTLINE DRAWING Dimension in mm φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 φ 130 ± 0.2 ● IF(AV) Average forward current .....................1700A ● VRRM Repetitive peak reverse voltage ..........6000V ● QRR Reverse recovery charge ................. 1500µC ● Press pack type TYPE NAME ANODE 0.4 min 35 ± 0.5 CATHODE 0.4 min φ 190 max φ 130 ± 0.2 φ 190 max φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Voltage class 120 6000 6000 4800 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight Unit V V V Conditions Ratings 2670 1700 40 6.7 × 106 –40 ~ +125 –40 ~ +150 98 ~ 118 4600 f = 60Hz, sine wave θ = 180°, Tf = 65°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz Recommended value 108 Standard value Unit A A kA A 2s °C °C kN g ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Rth(j-f) Parameter Test conditions Repetitive peak reverse current Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 6300A, Instantaneous measurememt Forward voltage IFM = 2000A, diF/dt = –30A/µs, VR = 150V, Reverse recovery charge Tj = 125°C Thermal resistance Junction to fin Min — — Limits Typ — — Max 300 5.0 — — 1500 µC — — 0.009 °C/W Unit mA V Aug.1998 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE MAXIMUM FORWARD CHARACTERISTICS 104 7 Tj = 125°C 5 4 3 2 Tj = 25°C 103 7 5 4 3 2 102 0 2.0 4.0 6.0 8.0 RATED SURGE FORWARD CURRENT 50 SURGE FORWARD CURRENT (kA) 45 40 35 30 25 20 15 10 5 0 0 10 10.0 FORWARD VOLTAGE (V) 5 7 102 MAXIMUM POWER DISSIPATION CHARACTERISTICS 100 2 3 5 7 101 0.01 10000 RESISTIVE, INDUCTIVE LOAD 9000 POWER DISSIPATION (W) THERMAL IMPEDANCE (°C/W) 2 3 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 0.008 0.006 0.004 0.002 THREE-PHASE HALF WAVE, 7000 FULL WAVE RECTIFICATION 6000 CIRCUIT 8000 DC CIRCUIT 5000 4000 3000 2000 SINGLE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 1000 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 0 500 1000 1500 2000 2500 3000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE FORWARD CURRENT REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. JUNCTION TEMPERATURE (TYPICAL) RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 120 100 DC CIRCUIT 80 60 THREE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 40 20 0 500 1000 1500 2000 2500 3000 AVERAGE FORWARD CURRENT (A) REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) AVERAGE FORWARD CURRENT (A) 140 0 0 TIME (S) 160 FIN TEMPERATURE (°C) 5 7 101 2 3 3 2 103 7 5 3 2 QRR 102 7 5 3 2 101 7 5 3 IFM = 2000A diF/dt = –30A/µs VRM = 150V VAK • iA FORWARD CURRENT (A) PERFORMANCE CURVES + 0 – IFM diF/dt trr t VRM Irm QRR = trr Irm 2 trr 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Aug.1998 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 102 7 5 3 2 QRR + 0 – IFM diF/dt trr t VRM Irm QRR = trr Irm 2 diF/dt = –30A/µs VRM = 150V Tj = 125°C 101 trr 7 5 3 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 FORWARD CURRENT (A) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT (TYPICAL) 7 5 3 QRR 2 103 7 5 3 2 102 7 5 3 2 VAK • iA 103 7 5 3 2 REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) 3 2 VAK • iA REVERSE RECOVERY CHARGE (µC), REVERSE RECOVERY TIME (µS) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. FORWARD CURRENT (TYPICAL) + IFM diF/dt trr 0 – Irm IFM = 2000A VRM = 150V QRR = trr Irm 2 Tj = 125°C t VRM trr 101 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECREASE OF REVERSE CURRENT (A/µS) Aug.1998