1,310nm MQW-DFB Return Path Laser FLD3F12JL FEATURES BENEFITS • Multiple Quantum Well (MQW) DFB Laser Loading • Wide operating temperature without TEC Characteristics • Built-in optical isolator • Coaxial module with vertical flange • 4 Channels video/data • Low Distortion • 5dB Link Loss APPLICATIONS This DFB laser module is intended for application in return (reverse) path analog video/data. DESCRIPTION The FLD3F12JL is a DFB laser diode for return path analog video/data applications. It has a 2.0 to 4.0mW optical power range*. It is specified with 4 channels signal loading and has excellent CSO and CTB performance. It is packaged in a small coaxial coolerless type module with built-in isolator and monitor photodiode. This device has a wide operating temperature of -25 to +85°C without ThermoElectric Cooler (TEC). ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Ratings Unit Optical Output Power Pfmax 8.0 mW Forward Current (LD) Ifmax 150 mA Reverse Voltage (LD) Vrmax 2 V Photodiode Reverse Voltage VDRmax 20 V Photodiode Forward Current IDFmax 2 mA Soldering Temperature (t<10sec., d>2.5mm) Tsolder 260 °C Storage Temperature Tstg -40 to +90 °C Operating Case Temperature Top -25 to +85 °C Storage Humidity (Note 1) Xstg 85 % Operating Humidity (Note 1) Xop 85 % Parameter Note 1: Storage or operating within 500 hours maximum. Edition 1.0 December 1999 1 1,310nm MQW-DFB Return Path Laser FLD3F12JL OPTICAL AND ELECTRICAL CHARACTERISTICS (Tc=-25 to +85°C, unless otherwise specified) Min. Limits Typ. Max. CW, IF=Iop 2.0 - 4.0 mW Ith CW 2 - 60 mA Forward Voltage VF CW, IF=Iop - 1.2 1.5 V Slope Efficiency S CW, IF=Iop 40 - 250 µW/mA Slope Efficiency at Tc=25°C S25 CW, IF=Iop, Tc=25°C 60 120 200 µW/mA Slope Efficiency Ratio RTS S(Tc)/S25 0.5 - 1.4 - λp CW, IF=Iop 1,290 - 1,330 nm SideMode Suppression Ratio SSR CW, IF=Iop 30 - - dB Composite Second Order CSO Note (1) - - -55 dBc Composite Triple Beat CTB Note (1) - - -60 dBc Relative Intensity Noise RIN Note (2) - - -150 dB/Hz - Note (3) -0.5 - +0.5 dB Monitor Current Im CW, IF=Iop, VDR=5V 0.05 - 2.0 mA Monitor Dark Current ID VDR=5V - 1 500 nA Tracking Error TE Note (4) -1.0 - +1.0 dB Parameter Symbol Test Conditions Fiber Output Power Pf Threshold Current Peak Wavelength Frequency Flatness Note (1): Note (2): Note (3): Note (4): Unit IF=Iop, OMI=7%/ch, 4ch(f=7.25MHz to 25.25MHz) CW, IF=Iop, f=5MHz to 300MHz IF=Iop, f=5MHz to 300MHz CW, Im-APC(IF=Iop@Tc=+25°C), Tc=-25°C to +85°C 2 Edition 1.0 December 1999 1,310nm MQW-DFB Return Path Laser FLD3F12JL Fig. 1 Forward Current vs Output Power Fig. 2 Forward Voltage vs Forward Current Tc=+25°C 80 -25°C Forward Current, If (mA) Output Power, Pf (mW) 4 3 +25°C 2 Tc=+85°C 1 0 0 20 40 60 80 60 40 20 0 100 Forward Current, If (mA) 0 0.5 1.0 1.5 2.0 Forward Voltage, Vf (V) Fig. 4 Temperature Dependence of Slope Efficiency Fig. 3 Temperature Dependence of Threshold Current Slope Efficiency, S (µW/mA) Threshold Current, Ith (mA) 100 10 1 -20 0 20 40 60 200 150 100 50 -20 80 0 20 40 60 Case Temperature, Tc (°C) Case Temperature, Tc (°C) Edition 1.0 December 1999 250 3 80 1,310nm MQW-DFB Return Path Laser FLD3F12JL Fig. 5 Tracking Characteristics Im = constant (@Tc=25°C) -1 0 -1 -2 -25 0 25 40 60 80 85 Case Temperature, Tc (°C) Fig. 6 CSO vs. Output Power CSO at 6MHz (dBc) -50 OMI = 7%/ch, 4ch -55 Tc=+85°C -60 +25°C -65 -25°C -70 2 3 4 Optical Output Power, Pf (mW) Fig. 7 CTB vs. Output Power -60 CTB at 13MHz (dBc) Tracking Error (dB) 2 OMI = 7%/ch, 4ch -65 Tc=-25°C -70 +85°C -75 +25°C -80 2 3 4 Optical Output Power, Pf (mW) 4 Edition 1.0 December 1999 1,310nm MQW-DFB Return Path Laser FLD3F12JL Notes Edition 1.0 December 1999 5 1,310nm MQW-DFB Return Path Laser FLD3F12JL “JL” PACKAGE UNIT: mm lead rotation ±10° 4-C1 Ø0.9±0.1 P.C.D.2.54 4 1 Ø6.3 MAX 4-Ø0.45±0.1 12±0.15 16.00±0.15 3 Ø7.1±0.1 0.3 2 10 MIN. 6.7±0.2 2.5±0.1 32 MAX. 7.4±0.2 LD 1 800 MIN. 4 CASE PD 2 3 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com • Do not put this product into the mouth. FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 6