1,550nm MQW-DFB Continous Wave Laser FLD5F6CX-H FEATURES • Continuous Wave (CW) MQW DFB Laser • Built-in TEC, Thermistor and Monitor PD • 14-Pin Butterfly Type Module • 10mW Output Power • Selected wavelengths according to ITU-T grid available • Polarization preserving (PANDA) fiber APPLICATIONS This MQW laser is intended for use in 2.5 and 10 Gb/s long haul DWDM transmission systems. DESCRIPTION The Multiple Quantum Well (MQW) Laser has high power CW operation. It is packaged in a “butterfly” type module. This module has high optical coupling efficiency through an optical isolator. This module also includes a monitor photodiode, a thermoelectric cooler (TEC) and thermistor. This laser is designed for use with external modulation components (such as LiNb03 modulators). NOTE This device is not available with an axis aligned connector. The Fujitsu connector is attached only for the convenience of measuring the extinction ratio at incoming inspection of the customer. A fusion splice is the recommended method for connecting this laser to an external modulator. ABSOLUTE MAXIMUM RATINGS (Tc=25°C) Symbol Condition Ratings Unit Storage Temperature Tstg - -40 to +70 °C Operating Case Temperature Top - -20 to +70 °C Optical Output Power Pf CW 15 mW Laser Reverse Voltage VR - 2 V Laser Forward Current IF CW 150 mA Photodiode Reverse Voltage VDR - 20 V Photodiode Forward Current IPF - 10 mA Cooler Current Ic - 1.4 A Cooler Voltage Vc Note (1) 2.5 V Tsold <260°C 10 sec Parameter Lead Soldering Time Note 1: Heatsink thickness shall be 10mm min. (refer to note on thermal precaution). Edition 1.0 March 1999 1 1,550nm MQW-DFB Continous Wave Laser FLD5F6CX-H OPTICAL AND ELECTRICAL CHARACTERISTICS AT (TL=Tset, Tc=25°C, BOL, unless otherwise specified) Limits Typ. - Max. +35 Unit - Min. +20 CW, Tc=-20 to +70°C 10 - - mW Ith CW 3 - 40 mA Forward Voltage VF CW, IF=30 mA, pin 3,13 - - 1.5 V Slope Efficiency η CW, Pf=10mW, ORL>40dB 0.09 0.16 - mW/mA Peak Wavelength λp CW, Pf=10mW, ORL>40dB Wavelength Drift - after 20 years - - 0.2 nm Wavelength Stability with Case Temperature - - - - +/-2 pm/°C Spectral Width (-3dB) ∆λ CW, Pf=10mW, ORL>40dB - 8 50 MHz Side Mode Suppression Sr CW, Pf=10mW, ORL>40dB 30 33 - dB Monitor Current Im Pf=10mW 0.04 - 1.0 mA Monitor Dark Current Idm VPD=5V - - 100 nA Monitor Capacitance Ct VPD=5V, f=1 MHz - - 10 pF Tracking Error (Note 2) TE Im=constant, Pf(Tc=25°C)=10mW, Tc=-20 to +70°C - - +/-0.5 dB Optical Isolation S22 Tc=-20 to +70°C 25 - - dB Extinction Ratio TE/TM CW, Pf=10mW 20 - - dB RIN CW, Pf=10mW, ORL>40dB, f=0.5GHz - - -157 dB/Hz Cooler Current Ic TL=Tset, Tc=+70°C, Pf=10mW - - 1.0 A Cooler Voltage Vc TL=Tset, Tc=+70°C, Pf=10mW - - 2.4 V Thermistor Resistance Rth TL=+20 to +35°C 6.3 - 12.7 kΩ B TL=+20 to +35°C 3,270 3,450 3,630 K Parameter Symbol Conditions Tset Pf Threshold Current Laser Set Temperature Optical Output Power Relative Intensity Noise Thermistor B Constant (Note 2) Note (4) °C nm Note 2. TE=10*log[Pf(Tc)/Pf(25)] Note 3. Relation between resistance and temperature (°K) is: Rth (T) = Rth (25)*exp[B(1/T-1/298)] Note 4. The selected wavelength is available which is listed in Figure 5. Edition 1.0 March 1999 2 1,550nm MQW-DFB Continous Wave Laser FLD5F6CX-H Fig. 1 Forward Voltage vs Output Power Fig. 2 Temperature Dependance of Wavelength 1554 Wavelength (nm) Output Power, Pf (mW) 12 9 6 1553 1552 1551 3 0 1550 10 0 30 60 90 20 30 40 Laser Temperature, TL (°C) Forward Current, If (mA) Fig.4 Spectrum Fig. 3 Cooler Voltage -Current 10 3.0 3.0 Vc 1.0 Ic 0.0 -1.0 1.0 0 10 20 30 40 50 60 0.0 70 Relative Intensity (dB) 2.0 2.0 Cooler Current (A) Cooler Voltage (V) 0 -10 -20 -30 -40 -50 -60 -1.0 80 1545 Cooler Temperature (°C) 1550 Wavelength λ (nm) Edition 1.0 March 1999 3 1555 1,550nm MQW-DFB Continous Wave Laser FLD5F6CX-H Fig. 5 Wavelength Table Part Number FLD5F6CX-H62 -H61 -H60 -H59 -H58 -H57 -H56 -H55 -H54 -H53 -H52 -H51 -H50 -H49 -H48 -H47 -H46 -H45 -H44 -H43 -H42 -H41 Wavelength (nm) (TL=Tset) (in vacuum) 1527.99 1528.77 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 1544.53 -H40 -H39 -H38 -H37 -H36 -H35 -H34 -H33 -H32 -H31 -H30 -H29 -H28 -H27 -H26 -H25 -H24 -H23 -H22 -H21 -H20 -H19 -H18 Tolerance (nm) ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 4 1545.32 1546.12 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.55 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 Edition 1.0 March 1999 1,550nm MQW-DFB Continous Wave Laser FLD5F6CX-H “CX” PACKAGE UNIT: mm TOP VIEW 17.24 15.24 2.54 14-0.5 PIN 7 All dimensions are in millimeters. PIN 1 TH 10 KΩ 15.2 11.6 φ0.9 8.89 12.7 14.6 φ5.2 TEC (Preliminary) 0.5 4-φ2.67 PIN 8 20.83 22.0 26.04 29.97 1.70 PIN 14 5.41 5.47 0.5 1.70 8.17 4.15 5.47 * Pigtail length (L) shall be specified in the detail (individual) specification, if it is special. L=1500 min. for standard *L 23 13 PIN # 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. FUNCTION Temperature Monitor Temperature Monitor Laser DC Bias (-) Monitor (Anode) Monitor (Cathode) TEHP (+) TEHP (-) Case Ground Case Ground N.C. Laser Ground Laser Modulation (-) Case Ground N.C. Po For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. www.fcsi.fujitsu.com FUJITSU MIIKROELCTRONIK GmbH FUJITSU QUANTUM DEVICES, LTD. Asia & Japan Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Edition 1.0 March 1999 5