FUJITSU FLL410IK-4C

FLL410IK-4C
L-Band High Power GaAs FET
FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=11.5dB(Typ.)
・High PAE: ηadd=44%(Typ.)
・Broad Band: 3.4~3.7GHz
・Hermetically Sealed Package
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 – 3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Symbol
Rating
Unit
Drain-Source Voltage
Item
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Storage Temperature
Channel Temperature
W
107.0
Tstg
-65 to +175
o
Tch
175
o
C
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
VDS
≤12
V
Gate Current
IGF
RG=5Ω
≤117
mA
Gate Current
IGR
RG=5Ω
≥-23
mA
≤145
o
Operating Channel Temperature
Tch
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol
VDS=5V , VGS=0V
Min.
-
Limit
Typ.
4.0
Max.
-
Test Conditions
Unit
A
Pinch-off Voltage
IDSS
Vp
VDS=5V , IDS=100mA
-0.1
-0.3
-0.5
V
Gate-Source Breakdown Voltage
VGSO
IGS=-1.0mA
-5.0
-
-
V
Output Power
POUT
45.0
46.0
-
dBm
10.5
11.5
-
dB
-
6.7
8.7
A
%
Drain Current
GL
Linear Gain *
1
Idsr
Drain Current
ηadd
Power-added Efficiency
Thermal Resistance
Rth
VDS=12V
f=3.6 GHz
IDS=3A
Pin=36.0dBm
Channel to Case
*1:GL is measured at Pin=22.0dBm
ESD
Class Ⅲ
44
-
-
1.0
1.4
o
C/W
CASE STYLE: IK
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
Oct 2003
-
1
FLL410IK-4C
L-Band High Power GaAs FET
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. TOTAL INPUT POWER
OUTPUT POWER vs. INPUT POWER
VDS=12V, IDS(DC)=3A
VDS=12V, IDS(DC)=3A, f=3.6GHz
Pin=38dBm
46
80
42
Pin=30dBm
40
38
Pin=26dBm
36
34
Output Power [dBm]
46
Pin=34dBm
44
Pin=22dBm
32
70
Pout
44
60
42
50
40
40
38
P.A.E
3.4
3.5
3.6
3.7
3.8
20
34
10
0
21 23 25 27 29 31 33 35 37 39
Frequency [GHz]
Input Power [dBm]
IMD vs. TOTAL OUTPUT POWER
-20
-24
-28
-32
-36
-40
-44
-48
-52
-56
-60
VDS=12V, f=3.6GHz, ∆ f=5MHz
IM3
IM5
2A
3A
2A
5A
3A
5A
24 26 28 30 32 34 36 38 40 42 44
Total Output Power [dBm]
2
30
36
32
3.3
IMD [dBc]
Output Power [dBm]
48
Power Added Efficiency [%]
48
FLL410IK-4C
L-Band High Power GaAs FET
■ S-PARAMETER
+90°
+50j
+100j
+25j
+250j
+10j
3.6GHz
3.6G H z
∞
3.6G H z
±180° 6
2
Scale for |S21|
3.6GHz
-250j
-10j
25
-25j
10Ω
-100j
-50j
0.3
-90°
S 11
S 22
VDS=12V, IDS=3.0A
Freq
[GHz]
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.50
S11
MAG
ANG
0.58
35.68
0.42
13.30
0.25
-20.74
0.14
-94.08
0.23 -164.13
0.36
163.77
0.45
142.74
0.50
124.23
0.50
108.29
0.47
93.47
0.39
78.62
0.25
65.52
0.07
82.54
0.20
179.28
0.42
166.40
0.60
150.07
0.71
136.32
0.78
124.93
0.81
115.73
0.84
107.96
0.85
101.79
S21
MAG
2.79
3.06
3.39
3.74
3.98
4.33
4.40
4.11
3.94
4.12
4.35
4.47
4.54
4.40
3.75
3.02
2.49
2.10
1.73
1.47
1.34
0°
Scale for |S 12|
0
ANG
-88.92
-111.83
-135.39
-152.40
-172.83
160.16
136.09
116.10
97.42
79.27
59.40
36.18
10.84
-17.44
-46.02
-67.67
-86.14
-103.97
-120.83
-133.98
-145.90
3
S12
MAG
0.02
0.02
0.02
0.03
0.03
0.03
0.04
0.04
0.04
0.05
0.05
0.06
0.06
0.06
0.05
0.05
0.04
0.03
0.03
0.02
0.02
ANG
-106.81
-133.45
-165.02
167.96
138.89
113.65
88.25
67.09
45.57
26.25
5.29
-15.70
-37.11
-63.99
-90.06
-113.42
-130.59
-143.89
-155.27
-165.37
-172.96
S22
MAG
ANG
0.79
62.67
0.78
52.26
0.74
39.91
0.68
26.00
0.60
11.96
0.52
-2.49
0.45
-17.92
0.39
-35.62
0.34
-56.13
0.33
-79.22
0.32 -105.46
0.32 -133.85
0.29 -165.63
0.25
156.61
0.21
109.33
0.21
58.18
0.25
18.29
0.30
-8.49
0.36
-27.76
0.40
-43.35
0.42
-58.31
S 12
S 21
FLL410IK-4C
L-Band High Power GaAs FET
■ BOARD LAYOUT(Reference)
<INPUT SIDE>
εr=3.5
<OUTPUT SIDE>
εr=3.5
εr=3.5 , t=0.6mm
Unit : mm
4
FLL410IK-4C
L-Band High Power GaAs FET
■ Package Out Line
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
5
FLL410IK-4C
L-Band High Power GaAs FET
For further information please contact :
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
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HONG KONG BRANCH
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TEL: +852-2377-0227
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FUJITSU QUANTUM DEVICES LTD.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL: +81-55-275-4411
FAX: +81-55-275-9461
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
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Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A.
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