FMS2013 Preliminary Data Sheet 2.1 SPDT GaAs High Isolation Absorptive Switch DC-4 GHz Functional Schematic Features: ♦ ♦ ♦ ♦ ♦ Available as RF Known Good Die Excellent low control voltage performance Excellent harmonic performance Very high isolation >49dB typ. up to 4GHz Very low Tx Insertion loss <1.0 dB at 4GHz RF01 V2 V1 RFIN RF02 Description and Applications: The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers market leading performance optimised for switch applications. Electrical Specifications: Parameter Test Conditions Tx Insertion Loss 4GHz 1.0 dB Rx Insertion Loss 4GHz 1.0 dB Return Loss 4GHz 15 dB VSWR On State 4GHz 1:1.3 VSWR Off State 4GHz 1:1.4 Isolation at 4 GHz 4GHz 49 2nd Harmonic Level 3GHz, Pin = 21dBm, Vctrl = 3V -72 dBc 3GHz, Pin = 27dBm, Vctrl = 5V -68 dBc Pin = 21dBm, 10% to 90% RF 30 ns Switching speed Note: (TOP = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Min Typ Max External DC blocking capacitors are required on all RF ports (typ: 47pF). 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Units dB FMS2013 Preliminary Data Sheet 2.1 Absolute Maximum Ratings: Parameter Symbol Absolute Maximum Max Input Power Pin +30dBm Control Voltage Vctrl +5V Operating Temperature TOP -40°C to +100°C Storage Temperature TOP -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. Truth Table: Vctrl1 Vctrl2 RFIN-RF01 RFIN-RF02 High Low On Off Low High Off On Note: ‘High’ ‘Low’ = >2.5V & <5V = <0.2V Pad and Die Layout: E D C Pad Reference Pad Name Description Pin Coordinates (µm) A G1 GND1 159 , 286 B RFI RFIN 159 , 446 C C2 Vctrl1 159 , 606 D C1 Vctrl2 159 , 766 E RFO1 RFO1 757 , 857 F G2 GND2 757 , 555 G G3 GND3 757 , 414 H RFO2 RFO2 757 , 112 F B G A H Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) Die Thickness (µm) Min. Bond Pad Pitch (µm) Min. Bond pad Opening (µm) 870 x 970 150 141 94 x 94 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com FMS2013 Preliminary Data Sheet 2.1 Typical Measured Performance Curves Mounted on Evaluation Board: -20 2 1.8 Isolation (dB) Off State VSWR On State 1.6 1.4 -30 Isolation (dB) -40 -50 -60 1.2 1 0 2 4 Frequency (GHz) -70 6 0 VSWR vs. Frequency 2 4 Frequency (GHz) 6 Isolation vs. Frequency -0.8 0 dB(S21) -1 Loss (dB) Loss (dB) -0.5 -1 -1.2 -1.4 3V 5V -1.6 -1.5 -1.8 -2 3e-005 20 2 4 6 Insertion Loss vs. Frequency 22 24 26 28 Input Power (dBm) Insertion Loss vs. Power 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com 30 FMS2013 Preliminary Data Sheet 2.1 Evaluation Board: V1 GRD V2 RFO1 C2 C1 C4 C6 C7 C3 RFIN C5 RFO2 Label Component C1, C2 Capacitor, 470pF, 0603 C3, C4, C5 Capacitor, 100pF, 0202 C6, C7 Capacitor, 47pF, 0402 Evaluation Board De-Embedding Data (Measured): 0 -0.2 S11 (dB) Loss (dB) S11 (dB) -10 0 -20 -30 -40 3e-005 -0.4 -0.6 Loss (dB) -0.8 -1 2 4 Frequency (GHz) 0 6 Return Loss vs. Frequency 2 4 Frequency (GHz) 6 Insertion Loss vs. Frequency Isolation (dB) -20 -30 Isolation (dB) -40 -50 -60 -70 0 2 4 Frequency (GHz) 6 Isolation vs. Frequency 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com Preliminary Data Sheet 2.1 FMS2013 Ordering Information: Part Number Description FMS2013-000-WP Die – waffle pak FMS2013-000-GP Die – gel pak FMS2013-000-EB Die mounted on evaluation board FMS2013-000-FF Wafer mounted on film frame Preferred Assembly Instructions: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected] Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected] Website: www.filcs.com