FPD750DFN Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES (1850MHZ): • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant 9 GENERAL DESCRIPTION: TYPICAL APPLICATIONS: The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. • • • Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 22.5 24 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 19 20 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; 45 % POUT = P1dB Noise Figure Output Third-Order Intercept Point NF IP3 (from 15 to 5 dB below P1dB) VDS = 5 V; IDS = 50% IDSS 0.7 1.1 VDS = 5 V; IDS = 25% IDSS 0.3 0.9 dB VDS = 5V; IDS = 50% IDSS Matched for optimal power 37 Matched for best IP3 39 180 230 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 280 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 375 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 200 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.75 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 0.75mA 12 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.75 mA 12 16 V Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < +0V 8V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS > 2V IDss Gate Current IG Forward or reverse current 7.5mA RF Input Power PIN Under any acceptable bias state 175mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Total Power Dissipation PTOT See De-Rating Note below 1.5W Comp. Under any bias conditions 5dB 2 Gain Compression 3 Simultaneous Combination of Limits 2 or more Max. Limits Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 1.5 - (0.011W/°C) x TPACK where TPACK= source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65°C carrier temperature: PTOT = 1.5W – (0.011 x (65 – 22)) = 1.03W 5 The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilisation over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Note that pHEMTs, since they are “quasi- E/D mode” devices, exhibit Class AB traits when operated at 50% of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to 33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 TYPICAL TUNED RF PERFORMANCE: FPD750DFN Biased @ VD = 5V, ID = 50%IDSS FPD750DFN Biased @ VD = 5V ID = 50%IDSS 2 35 MSG & 20 15 1.75 S21 1.5 Noise Fugure (dB) MSG 25 Mag S21 30 10 1.25 1 0.75 0.5 5 0.25 0 0 0.4 1.4 2.4 3.4 4.4 5.4 6.4 7.4 Frequency (GHz) 8.4 9.4 10.4 11.412 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6 TYPICAL I-V CHARACTERISTICS: DC IV Curves FPD750SOT89 0.30 Drain-Source Current (A) 0.25 0.20 VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-Source Voltage (V) Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilised circuits. Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression analysis shows r2 < 0.7, and the regression fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary with the quiescent operating point IDS. 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 TYPICAL OUTPUT PLANE CONTOURS (VDS = 5V, IDS = 50%IDSS): FPD750DFN POWER CONTOURS 900MHz 1. 0 0.8 Swp Max 168 0.6 2.0 0.4 3.0 4.0 5.0 0.2 10.0 0. 2 0 0.4 0.6 0.8 1.0 2.0 24dBm 23dBm 25dBm 10. 022dBm 3.0 4. 5.0 0 21dBm 20dBm -10.0 -0.2 -5.0 -4.0 -3.0 -0.4 2.0 0.6 0.8 Swp Min 1 1.0 FPD750DFN POWER CONTOURS 1850MHz Swp Max 180 1. 0 0. 8 0. 6 2. 0 0.4 3.0 4.0 5.0 0.2 22dBm 10.0 0. 2 0 0. 4 0. 6 0. 8 1. 0 2. 0 3. 4. 5. 0 0 0 10 .0 25dBm -10.0 20dBm 24dBm -0.2 21dBm -5.0 -4.0 23dBm -3.0 -0.4 0. 6 2. 0 0. 8 1. 0 Swp Min 1 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 NOISE PARAMETERS: Bias 3V, 50%IDSS Bias 5V, 25%IDSS Γopt Freq (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.509 0.404 0.408 0.402 0.375 0.349 0.302 0.281 0.264 0.244 0.265 0.303 0.312 0.342 20.5 52.8 56.5 61.7 70.3 74.1 84.4 96.7 116.1 137.0 162.8 168.7 -176.1 -165.0 Γopt Freq Rn/50 0.082 0.074 0.070 0.067 0.064 0.066 0.064 0.060 0.055 0.056 0.051 0.043 0.049 0.060 Rn/50 (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.520 0.465 0.471 0.458 0.435 0.423 0.355 0.327 0.298 0.246 0.245 0.271 0.279 0.295 16.1 36.4 47.4 52.0 60.0 62.1 71.6 80.7 97.0 116.3 144.0 149.5 171.0 176.4 0.079 0.148 0.069 0.068 0.065 0.067 0.064 0.060 0.056 0.057 0.051 0.041 0.042 0.053 Bias 5V, 50%IDSS Γopt Freq Rn/50 (GHz) Mag Angle 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.512 0.400 0.403 0.385 0.362 0.344 0.299 0.284 0.264 0.236 0.263 0.298 0.323 0.326 21.8 52.8 57.5 63.2 72.0 76.1 86.7 98.0 117.5 139.7 163.7 171.9 -165.6 -163.6 0.096 0.084 0.080 0.077 0.074 0.075 0.072 0.068 0.062 0.064 0.058 0.051 0.062 0.075 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 S-PARAMETERS (BIASED @ 5V, 50%IDSS): FREQ[GHz] 0.400 0.650 0.900 1.150 1.400 1.650 1.900 2.150 2.400 2.650 2.900 3.150 3.400 3.650 3.900 4.150 4.400 4.650 4.900 5.150 5.400 5.650 5.900 6.150 6.400 6.650 6.900 7.150 7.400 7.650 7.900 8.150 8.400 8.650 8.900 9.150 9.400 9.650 9.900 10.150 10.400 10.650 10.900 11.150 11.400 11.650 11.900 S11m 0.987 0.906 0.863 0.825 0.794 0.770 0.753 0.741 0.732 0.724 0.720 0.713 0.710 0.700 0.703 0.694 0.703 0.690 0.683 0.687 0.696 0.699 0.705 0.709 0.715 0.721 0.726 0.729 0.731 0.733 0.739 0.743 0.750 0.755 0.761 0.768 0.779 0.782 0.791 0.805 0.804 0.807 0.813 0.821 0.831 0.845 0.858 S11a -36.5 -58.0 -76.9 -93.8 -108.7 -121.7 -133.2 -143.2 -152.1 -159.8 -166.8 -172.7 -178.4 176.6 171.4 166.9 161.1 156.4 151.2 146.8 141.5 136.3 131.1 126.2 121.8 117.6 113.6 110.0 106.8 104.0 100.9 98.3 95.3 92.3 89.1 85.7 81.9 77.8 73.9 69.3 64.7 60.7 57.1 53.6 50.3 47.2 43.9 S21m 17.890 16.489 14.905 13.369 11.976 10.761 9.713 8.828 8.065 7.416 6.864 6.398 5.991 5.643 5.308 5.058 4.815 4.649 4.422 4.199 4.033 3.855 3.694 3.527 3.367 3.224 3.083 2.933 2.801 2.692 2.601 2.516 2.443 2.373 2.315 2.256 2.205 2.149 2.115 2.066 1.973 1.899 1.833 1.776 1.718 1.669 1.635 S21a 156.1 140.4 128.5 118.1 109.1 101.1 94.1 87.6 81.9 76.5 71.5 66.8 62.2 58.0 53.6 49.7 45.1 41.3 35.6 32.0 27.7 23.5 19.0 14.8 10.8 6.8 2.7 -1.0 -4.3 -7.5 -10.8 -14.0 -17.4 -20.7 -24.3 -27.8 -31.5 -35.4 -39.4 -44.4 -48.7 -52.5 -56.1 -59.6 -63.2 -66.6 -70.4 S12m 0.017 0.025 0.031 0.036 0.039 0.043 0.044 0.046 0.047 0.048 0.049 0.051 0.052 0.053 0.054 0.054 0.056 0.058 0.058 0.058 0.060 0.062 0.062 0.064 0.064 0.064 0.065 0.064 0.064 0.064 0.064 0.066 0.068 0.069 0.071 0.075 0.077 0.080 0.084 0.086 0.087 0.087 0.089 0.091 0.091 0.093 0.094 S12a 72.2 60.3 51.8 44.8 39.4 35.2 30.6 27.7 24.9 23.2 19.9 18.2 15.3 13.5 13.2 10.4 10.5 7.8 3.8 4.2 0.8 -0.8 -3.1 -6.4 -9.4 -11.5 -14.1 -16.3 -18.7 -19.0 -20.2 -21.4 -21.9 -22.7 -25.0 -26.4 -28.9 -30.6 -33.7 -37.3 -40.7 -43.2 -45.3 -48.0 -50.4 -52.7 -54.3 S22m 0.392 0.335 0.311 0.287 0.266 0.246 0.228 0.212 0.198 0.185 0.174 0.166 0.160 0.152 0.158 0.150 0.154 0.157 0.167 0.158 0.159 0.158 0.162 0.165 0.166 0.167 0.169 0.173 0.172 0.172 0.177 0.185 0.196 0.209 0.221 0.239 0.257 0.276 0.299 0.320 0.337 0.350 0.361 0.374 0.385 0.394 0.398 S22a -29.3 -46.1 -60.1 -72.4 -82.9 -91.7 -99.5 -106.8 -113.7 -120.5 -126.8 -133.4 -140.4 -145.6 -152.6 -158.5 -161.5 -167.5 -173.1 -179.6 177.3 173.8 170.1 164.5 158.7 152.8 146.4 139.2 131.7 125.5 120.8 116.1 111.4 107.8 104.8 102.5 100.2 98.4 96.1 93.8 90.6 88.1 85.8 83.2 80.3 77.0 73.2 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 REFERENCE DESIGN (5.3 – 5.9GHZ): Vd -Vg 1.0uF 1.0uF FPD750DFN EVAL Board Schematic 15pF 15pF 20 Ohm Z16 Z10 Z15 Z9 15pF 1 RF IN (50 Ohm) Z5 Z1 Z0 2 4 1 3 Z2 2 4 Z3 1 3 Z4 Z6 Z5 Z1 Z14 Z8 2 4 1 3 Z7 Z11 15pF 3 Z13 Z17 Z18 Z19 RF OUT (50 Ohm) Z14 Z8 Desc. Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z16 Z11, Z12 Z13 Z14 Z15 Z17 Z18 Z19 Z12 2 4 Value 0.045" x 0.050" Microstrip 0.020" x 0.500" Microstrip W1=0.020" W2=0.020" W3=0.020" W4=0.020" Microstrip Cross 0.020" x 0.030" Microstrip W1=0.020" W2=0.052" W3=0.020" W4=0.052" Microstrip Cross 0.052" x 0.94" Microstrip 0.020" x 0.285" Microstrip W1=0.020" W2=0.054" W3=0.020" W4=0.054" Microstrip Cross 0.054" x 0.170" Microstrip 0.015" x 0.162" Microstrip 0.310" x 90° Microstrip Radial Stub 0.280" x 90° Microstrip Radial Stub 0.012" x 0.037" Microstrip W1=0.022" W2=0.040" W3=0.022" W4=0.040" Microstrip Cross 0.040" x 0.075" Microstrip 0.015" x 0.257" Microstrip 0.022" x 0.140" Microstrip 0.110" x 0.030" Microstrip 0.030" x 0.100" Microstrip PARAMETER UNIT PERFORMANCE Frequency GHz 5.3 to 5.9 Gain dB 13.5 P1dB dBm 24 N.F. dB 1.2 S11 dB -8 S22 dB -10 Vd V 5 Vg V -0.4 to -0.7 Id mA 100 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 EVALUATION BOARD: PCB FOOTPRINT: 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD750DFN Datasheet v3.0 PACKAGE OUTLINE: (dimensions in millimetres – mm) PREFERRED ASSEMBLY INSTRUCTIONS: DISCLAIMERS: Available on request. This product is not designed for use in any space based or life sustaining/supporting equipment. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. ORDERING INFORMATION: APPLICATION NOTES & DESIGN DATA: PART NUMBER DESCRIPTION FPD750DFN Packaged pHEMT EB750DFN-BB Packaged pHEMT eval board – 900MHz EB750DFN-BA Packaged pHEMT eval board – 1.85GHz EB750DFN-BC Packaged pHEMT eval board – 2.0GHz EB750DFN-BE Packaged pHEMT eval board – 2.4GHz EB750DFN-AJ Packaged pHEMT eval board Application Notes and design data including Sparameters are available on request. – 5.3 to 5.75GHz 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com