FSGL035R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured. December 2001 Features • 12A†, 60V, rDS(ON) = 0.062Ω • UIS Rated TM The Fairchild family of Star*Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star*Power and Star*Power Gold products. Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 1.2nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging TO-205AF Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Formerly available as type TA45224W. Ordering Information D RAD LEVEL SCREENING LEVEL G S PART NUMBER/BRAND 10K Engineering samples FSGL035D1 100K TXV FSGL035R3 100K Space FSGL035R4 † Current is limited by the package capability ©2001 Fairchild Semiconductor Corporation FSGL035R Rev. B FSGL035R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) FSGL035R 60 60 UNITS V V 12 (Note) 10 48 ±30 A A A V 25 10 0.2 48 12 48 -55 to 150 300 W W W/ oC A A A oC oC 1.0 (Typical) g CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. † Current is limited by the package capability Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) VDS = 48V, VGS = 0V VGS = ±30V TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC VGS = 12V, ID = 12A ID = 10A, VGS = 12V Gate Charge Source Qgs Gate Charge Drain Qgd MAX UNITS 60 - - - V - 5.5 V 2.0 - 4.5 V 1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - 0.756 V - 0.055 0.062 Ω TC = 125oC - - 0.093 Ω - - 20 ns - - 65 ns - - 30 ns VDD = 30V, ID = 12A, RL = 2.5Ω, VGS = 12V, RGS = 7.5Ω VGS = 0V to 12V TYP TC = 25oC tf Qg(12) MIN VDD = 30V, ID = 12A - - 15 ns - 24 28 nC - 10 12 nC - 5 7 nC Gate Charge at 20V Qg(20) VGS = 0V to 20V - 56 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 3 - nC Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case ©2001 Fairchild Semiconductor Corporation RθJC ID = 12A, VDS = 15V - 6 - V VDS = 25V, VGS = 0V, f = 1MHz - 1550 - pF - 540 - pF - 13 - pF 5.0 oC/W - - FSGL035R Rev. B FSGL035R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge TEST CONDITIONS MIN TYP MAX UNITS ISD = 12A - - 1.5 V ISD = 12A, dISD/dt = 100A/µs - - 100 ns - 0.25 - µC QRR TC = 25oC, Unless Otherwise Specified Electrical Specifications up to 100K RAD MIN MAX UNITS Drain to Source Breakdown Volts PARAMETER (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA TEST CONDITIONS 60 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±30V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 48V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 12A - 0.756 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 10A - 0.062 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (Note 7) MAXIMUM VDS BIAS (V) 37 36 -5 60 60 32 -2 60 60 32 -4 30 82 28 0 48 82 28 -2 30 SYMBOL (Note 6) TYPICAL LET (MeV/mg/cm) SEESOA NOTES: 4. Testing conducted at Brookhaven National Labs or Texas A&M. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ 70 70 60 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 60 50 VDS 50 VDS (V) LET = 37 40 40 30 30 LET = 82 20 20 10 10 LET = 60 0 0 0 -1 -2 -3 VGS (V) -4 -5 FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA ©2001 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 35 40 -6 NEGATIVE VGS BIAS (V) FIGURE 2. TYPICAL SEE SIGNATURE CURVE FSGL035R Rev. B FSGL035R Performance Curves Unless Otherwise Specified (Continued) LIMITING INDUCTANCE (HENRY) 1E-3 14 12 1E-4 ILM = 10A 10 ID , DRAIN (A) 30A 1E-5 100A 300A 8 6 1E-6 4 2 1E-7 30 10 100 0 -50 1000 300 0 FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS ID , DRAIN CURRENT (A) 100 50 150 100 TC , CASE TEMPERATURE (oC) DRAIN SUPPLY (V) FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE TC = 25oC 12V 100µs QG 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 VG 10ms 10 100 QGD QGS 200 CHARGE VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. BASIC GATE CHARGE WAVEFORM 2.5 ID, DRAIN-TO-SOURCE CURRENT (A) NORMALIZED rDS(ON) PULSE DURATION = 250ms, VGS = 12V, ID = 10A 2.0 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE ©2001 Fairchild Semiconductor Corporation 100 VGS = 14V VGS = 12V VGS = 10V VGS = 8V 80 60 40 VGS = 6V 20 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS FSGL035R Rev. B FSGL035R Performance Curves Unless Otherwise Specified (Continued) NORMALIZED THERMAL RESPONSE (ZθJC) 10 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM SINGLE PULSE 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 t1 t2 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 .01 .1 1 10 tAV , TIME IN AVALANCHE (ms) FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 12. UNCLAMPED ENERGY WAVEFORMS FSGL035R Rev. B FSGL035R Test Circuits and Waveforms (Continued) tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table) Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = ±30V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX ±20 (Note 7) ±25 (Note 7) ±20% (Note 8) ±20% (Note 8) UNITS nA µA Ω V 8. Or 100% of Initial Reading (whichever is greater). 9. Of Initial Reading. Screening Information TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) JANTXV EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 48A tH = 10ms; VH = 25V; IH = 1A; LIMIT = 60mV VGS = 45V, t = 250µs Optional MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-PRF-19500, Group A, Subgroup 2 JANS EQUIVALENT VGS(PEAK) = 20V, L = 0.1mH; Limit = 48A tH = 10ms; VH = 25V; IH = 1A; LIMIT = 60mV VGS = 45V, t = 250µs Required MIL-PRF-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-PRF-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-PRF-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-PRF-19500, Group A, Subgroups 2 and 3 NOTE: 10. Test limits are identical pre and post burn-in. Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 48V, t = 10ms 2.38 A Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 1A 230 mV ©2001 Fairchild Semiconductor Corporation FSGL035R Rev. B FSGL035R Rad Hard Data Packages - Fairchild Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D ©2001 Fairchild Semiconductor Corporation - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Radiation Data FSGL035R Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4