DIODES FZT789ATA

A Product Line of
Diodes Incorporated
Green
FZT789A
25V PNP MEDIUM POWER TRANSISTOR IN SOT223
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
BVCEO > -25V
IC = -3A high Continuous Current
Low saturation voltage VCE(sat) < -250mV @ -1A
RCE(sat) = 93mΩ for a low equivalent On-Resistance
hFE specified up to -6A for a high gain hold up
Complementary NPN Type: FZT689B
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
•
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Applications
•
•
•
•
Power MOSFET & IGBT gate driving
Battery powered circuits
Fast charge converters
Low loss power switching
SOT223
C
E
B
C
C
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Notes 4 & 5)
Product
FZT789ATA
FZT789AQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
FZT789A
FZT789A
Reel size (inches)
7
7
Tape width (mm)
12
12
Quantity per reel
1,000
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT
789A
FZT789A
Document Number DS33168 Rev. 5 - 2
FZT789A = Product Type Marking
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A Product Line of
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FZT789A
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-30
-25
-7
-3
-6
Unit
V
V
V
A
A
Value
2
3
62.5
41.7
12.93
-55 to +150
Unit
W
W
°C/W
°C/W
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
PD
RθJA
RθJL
TJ, TSTG
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
≥ 400
Unit
V
V
JEDEC Class
3A
C
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT789A
Document Number DS33168 Rev. 5 - 2
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Thermal Characteristics and Derating Information
50
60
50
T amb=25°C
25mm x 25mm
2oz FR4
40 D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
Pulse Width (s)
100
1k
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
70
T amb=25°C
40
30
D=0.5
20
10
0
100µ
10
25mm x 25mm
2oz FR4
10m 100m
1
10
Pulse Width (s)
100
1k
Max Power Dissipation (W)
Max Power Dissipation (W)
Single Pulse
T amb=25°C
1m
Document Number DS33168 Rev. 5 - 2
1m
10m 100m
1
Pulse Width (s)
10
100
1k
3.0
50mm x 50mm
2oz FR4
2.5
2.0
25mm x 25mm
2oz FR4
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
FZT789A
D=0.05
D=0.1
Transient Thermal Impedance
50mm x 50mm
2oz FR4
1
100µ
Single Pulse
D=0.2
Transient Thermal Impedance
100
50mm x 50mm
2oz FR4
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Collector Cut-off Current
ICBO
Collector Cut-off Current
Emitter Cut-off Current
ICES
IEBO
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
VBE(sat)
VBE(on)
DC Current Gain (Note 8)
Current Gain-Bandwidth Product (Note 8)
Turn-On Time
Turn-Off Time
Input Capacitance (Note 8)
Output Capacitance (Note 8)
Notes:
hFE
Min
-30
-25
-7
−
−
−
−
−
−
−
−
300
250
200
100
Typ
-40
-35
-8.5
<1
−
Unit
V
V
V
nA
µA
nA
nA
−
Max
−
−
−
-100
-10
-100
-100
-0.25
-0.45
-0.50
-1.0
-1.1
800
−
−
−
<1
<1
-0.15
-0.30
-0.30
-0.80
-0.75
−
−
−
V
V
V
−
fT
100
−
−
MHz
ton
toff
Cibo
Cobo
−
−
−
−
35
400
225
25
−
−
−
−
ns
ns
pF
pF
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -15V
VCB = -15V, Tamb = 100°C
VCE = -15V
VEB = -5.6V
IC = -1A, IB = -10mA
IC = -2A, IB = -20mA
IC = -3A, IB = -100mA
IC = -1A, IB = -10mA
IC = -1A, VCE = -2V
IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
VCE = -5V, IC = -50mA
f = 50MHz
VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
VEB = -0.5V, f = 1MHz
VCB = -10V, f = 1MHz
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FZT789A
Document Number DS33168 Rev. 5 - 2
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FZT789A
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT789A
Document Number DS33168 Rev. 5 - 2
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FZT789A
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
X1
X2
Y1
Y2
C1
C2
C1
Y2
X2
FZT789A
Document Number DS33168 Rev. 5 - 2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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Document Number DS33168 Rev. 5 - 2
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