InGaAs PIN photodiodes G10899 series Wide spectral response range (0.5 to 1.7 μm) The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending to 0.5 μm on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899 series also features low noise and low dark current. Features Applications Wide spectral response range Spectroanalysis Low noise, low dark current Thermometer Large active area available Specifications / absolute maximum ratings Type no. G10899-003K G10899-005K G10899-01K G10899-02K G10899-03K Window material Package Reverse voltage VR (V) Active area (mm) φ0.3 φ0.5 φ1 φ2 φ3 TO-18 Borosilicate glass TO-5 Absolute maximum ratings Forward Operating temperature current If Topr (mA) (°C) Storage temperature Tstg (°C) 5 10 -40 to +85 -55 to +125 2 Electrical and optical characteristics (Ta=25 °C) Type no. G10899-003K G10899-005K G10899-01K G10899-02K G10899-03K Photo sensitivity Spectral Peak S response sensitivity λ=λp range wavelength λ=0.65 μm λ=0.85 μm λ=1.3 μm λ λp Min. Typ. Min. Typ. Min. Typ. Min. Typ. (μm) (μm) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) 0.5 to 1.7 1.55 0.15 0.22 0.35 0.45 0.8 0.9 0.85 1 Dark Cut-off Terminal current frequency capacitance Shunt D* resistance ID Ct fc λ=λp Rsh VR=1 V VR=1 V VR=1 V VR=10 mV Typ. Max. RL=50 Ω f=1 MHz (nA) (nA) (MHz) (pF) (MΩ) (cm・Hz1/2/W) 0.3 1.5 300 10 1000 0.5 2.5 150 20 300 5 × 1012 1 5 45 70 100 5 25 10 300 25 15 75 5 600 10 NEP λ=λp (W/Hz1/2) 5 × 10-15 9 × 10-15 2 × 10-14 4 × 10-14 6 × 10-14 The G10899 series may be damaged by electrostatic discharge, etc. Be careful when using the G10899 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G10899 series Spectral response Photo sensitivity temperature characteristic (Typ. Ta=25 °C) 1.2 (Typ. Ta=25 °C) 2 Temperature coefficient (%/°C) G10899 series Photo sensitivity (A/W) 1.0 InGaAs PIN photodiode (standard type) 0.8 0.6 Si photodiode S1337-BQ 0.4 0.2 0 0.19 Si photodiode S1337-BR 0.4 0.6 0.8 1.2 1.0 1.4 1.6 1.5 1 0.5 0 -0.5 -1 0.2 1.8 0.4 0.6 0.8 1.0 1.2 1.4 1.8 Wavelength (µm) Wavelength (µm) KIRDB0408EA KIRDB0409EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1 µA 1.6 (Typ. Ta=25 °C, f=1 MHz) 10 nF G10899-03K 100 nA G10899-03K G10899-02K Terminal capacitance G10899-01K Dark current 10 nA 1 nA G10899-003K 100 pA 1 nF G10899-02K 100 pF G10899-005K G10899-01K 10 pF G10899-005K 10 pA G10899-003K 1 pA 0.01 0.1 1 10 100 Reverse voltage (V) 1 pF 0.01 0.1 1 10 100 Reverse voltage (V) KIRDB0414EC KIRDB0410EC 2 InGaAs PIN photodiodes G10899 series Shunt resistance vs. ambient temperature (Typ.) 1 TΩ 100 GΩ G10899-003K G10899-005K Shunt resistance 10 GΩ G10899-01K 1 GΩ 100 MΩ 10 MΩ G10899-02K 1 MΩ G10899-03K 100 kΩ -40 -20 0 20 40 60 80 100 Ambient temperature (°C) KIRDB0411EC Dimensional outlines (unit: mm) G10899-003K/-005K/-01K 5.4 ± 0.2 2.7 ± 0.2 Window 3.0 ± 0.1 13 Min. Photosensitive surface 3.6 ± 0.2 4.7 ± 0.1 0.45 lead 2.5 ± 0.2 Case KIRDA0150EA 3 InGaAs PIN photodiodes G10899 series G10899-02K/-03K 9.2 ± 0.2 4.2 ± 0.2 0.45 lead 18 Min. Photosensitive surface 2.5 ± 0.2 Window 5.9 ± 0.1 0.4 Max. 0.15 Max. 8.1 ± 0.1 5.1 ± 0.3 1.5 Max. Case KIRDA0151EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1109E02 Jun. 2010 DN 4