GTM G177

ISSUED DATE :2004/10/07
REVISED DATE :
G177
Single Output Hall Effect Latch IC
Description
The G177 is an integrated Hall effect latched sensor with output pull-high resistor driver designed for electronic commutation of
brushless DC motor applications and contactless switches. The device includes an on-chip Hall voltage generator for magnetic
sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and
output driver with pull-high resistor. An internal bandgap regulator is used to provide temperature compensated supply voltage for
internal circuits and allows a wide operating supply range.
If a magnetic flux density larger than threshold Bop, DO is turned on (low). The output state is held until a magnetic flux
density reversal falls below Brp causing DO to be turned off (high).
G177 is rated for operation over temperature range from -20 to 100 and voltage range from 3.5V to 28V. The devices
are available in low cost die forms or rugged 3 pin SIP packages.
Features
* Wide range of supply voltage: 3.5V to 28V.
* Internal bandgap regulator allows temperature compensated operations and a wide operating voltage range.
* High sensitivity with a small magnet.
* TTL and MOS ICs directly drivable by output.
* Build in protection diode for chip reverse power connecting.
Application
1)Brushless DC Motor
5)Revolution Counting
2)Brushless DC Fan
6)Speed Measurement
3)Position Sensors
7)Keyboard Switches
4)Rotation Sensors
8)Microswitches
Package Dimensions
REF.
A
A1
Millimeter
Min.
Max.
1.245
1.753
0.750REF.
REF.
Millimeter
Min.
Max.
D
3.962
4.216
E
2.870
3.124
13.60
15.60
b
0.330
0.432
L
b1
0.406
0.508
e
1.27 REF.
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ISSUED DATE :2004/10/07
REVISED DATE :
Functional Block Diagrams
VCC
VCC
1
1
27K
REG.
HALL
SENSOR
3
OUTPUT(DO)
2
Vss
Pin Descriptions
Name
Vcc
Vss
DO
P/I/O
P
P
O
Pin#
1
2
3
Description
Positive power supply
Ground
Digital output
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Supply Voltage
VALUE
Unit
Vcc
28V
V
VRCC
-28V
V
Magnetic flux density
B
Unlimited
Output OFF Voltage
Vce
35
V
Output ON Current
mA
Reverse Vcc Polarity Voltage
IC Continuous
25
Operating Temperature Range
Storage Temperature Range
Ta
-20~100
Ts
-65~150
Package Power Dissipation
PD
250
Maximum Junction Temp.
Tj
175
Electrical Characteristics (TA=+25
Parameter
SYMBOL
Supply Voltage
VCC
Low output voltage
VOL
High output voltage
VOH
Output Leakage Current
Output Short-circuit Current
Supply Current
ICex
-IOS
ICC
tr
Output Rise Time
Output Falling Time
tf
mW
)
Test Conditions
Min
Typ.
Max.
Unit
3.5
-
28
V
VCC=16V,Io=12mA,B=130 Gauss
-
-
0.4
V
VCC=3.6V,Io=12mA,B=130 Gauss
-
-
0.4
V
VCC=16V, Io=-30 A,B=-130 Gauss
14.6
-
-
V
VCC=3.6V,Io=-30 A,B=-130 Gauss
VCC=16V,Vcc=16V
VCC=16V,Vo=0V,B=-130 Gauss
VCC=24V,Output Open
VCC=16V,RL=820 CL=20pf
2.2
0.4
-
<0.1
5
0.3
10
0.9
10
1.5
V
uA
mA
mA
us
-
0.3
1.5
us
-
VCC=16V,RL=820
CL=20pf
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ISSUED DATE :2004/10/07
REVISED DATE :
Test Circuit
16V
Vout(DO)
RL
RL=820 Ohm
CL=20 pF
CL
Power dissipation VS. Environment Temperature
Ta( )
25 50 60 70 80 85 90 95 100 105 110 115
Pd(mW) 275 262 257 252 242 237 232 227 222 212 202 192
125
182
P o w e r D is s ip a t io n C u r v e
P d (m W )
300
250
200
150
100
0
25
50
75
100
125
150
T a ( °C )
Electrical Characteristics Curves
Current capacity vs. supply voltage for DO pin
Icc v.s Vcc at Different Temp
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ISSUED DATE :2004/10/07
REVISED DATE :
Magnetic Characteristics
Characteristic
Operate Point
Release Point
Hysteresis
Symbol
Ta=-0
Ta=+25
Max
Min
Min
to +70
Unit
Max
BIN A
Bop
0
70
0
70
Gauss
BIN B
-
100
-
100
Gauss
BIN C
Bop
Bop
-
130
-
130
Gauss
BIN A
Brp
-70
0
-70
0
Gauss
BIN B
Brp
-100
-
-100
-
Gauss
BIN C
Brp
-130
-
-130
-
Gauss
BIN A
Bhys
40
110
20
140
Gauss
BIN B
Bhys
50
150
30
200
Gauss
BIN C
Bhys
60
160
40
220
Gauss
Hysteresis Characteristics
Output Voltage in Volts
Bin A
DO
12
OFF
OP
10
8
6
4
2
RP
-200
-100
0
ON
100
200
Magnetic Flux Density in Gauss
Output Voltage in Volts
Bin B
DO
12
OFF
OP
10
8
6
4
2
RP
-200
-100
0
ON
100
200
Magnetic Flux Density in Gauss
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ISSUED DATE :2004/10/07
REVISED DATE :
Output Voltage in Volts
Bin C
DO
12
OFF
OP
10
8
6
4
2
RP
-200
-100
0
ON
100
200
Magnetic Flux Density in Gauss
Package Information
Active Area Depth
Package Sensor Location
Max:2.13mm
Min:1.87mm
0.51mm
NOM
Max:1.53mm
Min:1.27mm
BRANDED
SURFACE
1
2
3
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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