GEMOS MOS FIELD EFFECT TRANSISTOR GE9435 P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Schematic diagram GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment APPLICATIONS ● Battery protection ● Load switch ● Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape width Quantity 9435 GE9435 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS -30 V Gate-Source Voltage VGS ±20 V ID -5.3 A IDM -20 A Drain Current-Continuous @ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range PD 2.5 W TJ，TSTG -55 to 150 ℃ RθJA 50 ℃/W THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS Condition Min VGS=0V,ID=-250µA VDS=-24V,VGS=0V VGS=±20V,VDS=0V -30 VDS=VGS,,ID=-250µA VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A -1 VDS=-15V, ID=-5.3A 4 Typ 46 74 7 Max Unit -1 ±100 V µA nA -3 53 V mΩ 90 mΩ S 捷拓科技有限公司 GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY 地 址：廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室 電 話：0755-83661391 傳 真：0755-83661909 郵政編碼：518031 公司網站：www.gemostech.com ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China. Tel:0755-83661391 Fax:0755-83661909 Postcode:518031 Website:www.gemostech.com © GEMOS TECH CO., LTD. 2007 GEMOS GE9435 DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS=-15V,VGS=0V, F=1.0MHz 1040 420 PF PF 150 PF td(on) 19 VDD=-15V,ID=-1A VGS=-10V,RGEN=6Ω tr td(off) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VDS=-15V,ID=-5.3A, VGS=-10V 26 nS 9 13 nS 74 105 nS 36 50 nS 22.5 2 29 nC nC 6 VGS=0V,IS=-5.3A nC -1.3 -1.9 V A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 1: Switching Test Circuit Figure 2: Switching Waveforms Figure 3: Normalized Maximum Transient Thermal Impedance ©GEMOS TECH CO.,LTD. 2006.9.6 Version:1.1 Page 2 of 4 GEMOS GE9435 SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©GEMOS TECH CO.,LTD. 2006.9.6 Version:1.1 Page 3 of 4 GEMOS GE9435 ATTENTION: ■ Any and all GEMOS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your GEMOS representative nearest you before using any GEMOS products described or contained herein in such applications. ■ GEMOS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all GEMOS products described or contained herein. ■ Specifications of any and all GEMOS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ GEMOS THCH. Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all GEMOS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of GEMOS TECH. Co., Ltd. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. GEMOS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the GEMOS product that you intend to use. ■ This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. ■ The translation makes effort to be accurate and simply, if Chinese-translation has Difference, Take English explanation as the standard. 注意: ■ GEMOS产品说明书中所描述的信息，在没有特殊声明的条件下，不可使用在要求高可靠性的电路中。例如人体供能系统，航天控制系统或其 他应用中。在这种高可靠性应用下，可能会导致严重的物理或者材料的损坏。当设计电路中用到GEMOS的产品时，请就近咨询代理商。 ■ GEMOS对客户在超出说明书中提到的额定值使用产品所造成的损失不承担任何责任，即使是瞬间的使用（例如最大额定值，工作环境范围或 其他参数） 。 ■ GEMOS对所有产品在单独应用的情况下保证它的性能﹑典型应用和功能符合说明书中的条件。当使用在客户的产品和设备中，以上条件我们 不做保证。为了了解产品在单独使用下无法估测的情况，GEMOS建议客户在使用过程中，必须不断的评估和反复的测试实际应用在产品和设 备中的问题。 ■ GEMOS一直在努力为客户提供高质量，高可靠性的产品。但是，所有的半导体产品都有一定的失效概率，这些失效概率可能会导致一些事故 的发生，危及人的生命，也可能导致产生浓烟或者大火，招致财产受到损失。当你在设计产品时，必须采用安全指标，这样可以避免事故的发 生。这些措施不仅仅是为了保护电路，电路错误预防所做的安全的设计，多余的设计和结构的设计。 ■ GEMOS的所有产品（包括技术参数和服务）受到当地出口法规的控制，这种产品在没有得到有关部门的同意是不允许出口。 ■ 没有GEMOS预先的许可，这些出版物不能以任何的形式或方式重印或传送，包括影印和记录，或任何信息存储和检索系统。 ■ 在文中所列的信息（包括电路图和电路参数）仅做泛例参考；这并不是批量生产的保证。GEMOS保证说明书中所提到的任何信息都是准确、 可靠的，但是不对其使用在任何违反知识产权或者第三方其他产权的情况作保证。 ■ 所有产品由于工艺/技术的提高等所做的信息变动，GEMOS不做通知。当在设计电路时，请参照将要使用的产品的交付说明书。 ■ 这份说明书所提供的信息时间是在2007年5月。对规格书中信息的更改我们不做通知。 ■ 翻译力求简单准确，如中文翻译有歧义，概以英文说明为准。 ©GEMOS TECH CO.,LTD. 2006.9.6 Version:1.1 Page 4 of 4