Pb Free Plating Product ISSUED DATE :2006/05/04 REVISED DATE : GTS6923 BVDSS RDS(ON) ID P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET -20V 50m -3.5A Description The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Fast Switch Characteristic *Included Schottky Diode Package Dimensions REF. Millimeter Min. Max. A - 1.20 A1 b c 0.05 0.15 0.19 0.30 0.09 D 2.90 REF. Millimeter Min. Max. E 6.20 6.60 4.50 0.20 E1 e L 4.30 0.45 0.75 3.10 S 0° 8° 0.65 BSC Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET and Schottky) VDS -20 V Reverse Voltage (Schottky) VKA 20 V VGS ±12 V Gate-Source Voltage (MOSFET) Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 (MOSFET) ID @Ta=25 -3.5 A (MOSFET) ID @Ta=70 -2.8 A IDM -30 A IF 1 A IFM 25 A 1 W 1 W (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current 1 (Schottky) Total Power Dissipation (MOSFET) PD @Ta=25 Total Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range Tstg -55 ~ +150 Tj -55 ~ +125 Symbol Value Rthj-a 125 Thermal Data Parameter 3 Thermal Resistance Junction-ambient (MOSFET) 3 Thermal Resistance Junction-ambient (Schottky) GTS6923 Max. Max. Unit /W Page: 1/4 ISSUED DATE :2006/05/04 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.03 - Gate Threshold Voltage VGS(th) -0.5 - - V VDS=VGS, ID=-250uA gfs - 10 - S VDS=-10V, ID=-3.5A IGSS - - ±100 nA VGS= ±12V - - -1 uA VDS=-20V, VGS=0 - - -25 uA VDS=-16V, VGS=0 - - 50 - - 85 Qg - 15.6 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 5.2 - Td(on) - 8.2 - Tr - 9.4 - Td(off) - 66.4 - Tf - 48 - Input Capacitance Ciss - 660 - Output Capacitance Coss - 285 - Reverse Transfer Capacitance Crss - 130 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-0.83A, VGS=0V IS - - -0.83 A VD= VG=0V, VS=-1.2V Symbol Min. Typ. Max. Unit Forward Voltage Drop VF - - 0.5 V IF=1A Max. Reverse Leakage Current IRM - - 100 uA VR=20V Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.7A nC ID=-3.5A VDS=-10V VGS=-4.5V ns VDS=-10V ID=-1A VGS=-4.5V RG=3.3 RD=10 pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Test Conditions Schottky Characteristics @ Tj=25 Parameter Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 208 /W when mounted on Min. copper pad. GTS6923 Page: 2/4 ISSUED DATE :2006/05/04 REVISED DATE : MOSFET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GTS6923 Page: 3/4 ISSUED DATE :2006/05/04 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance SCHOTTKY DIODE Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 2. Forward Voltage Drop Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS6923 Page: 4/4