PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M PACKAGE OUTLINE H11AV2A-M SCHEMATIC 1 6 2 5 6 6 3 1 NC 4 H11AV1S-M, H11AV2S-M 1 H11AV1-M, H11AV2-M PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 H11AV1A-M, H11AV2A-M DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package. FEATURES • H11AV1 and H11AV2 feature 0.3" input-output lead spacing • H11AV1A and H11AV2A feature 0.4" input-output lead spacing • UL recognized (File #E90700, Vol. 2) • VDE recognized (File #102497) - Add option V (e.g., H11AV1AV-M) APPLICATIONS • Power supply regulators • Digital logic inputs • Microprocessor inputs © 2005 Fairchild Semiconductor Corporation Page 1 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Value Units Storage Temperature TSTG -40 to +150 °C Operating Temperature TOPR -40 to +100 °C Wave solder temperature (see page 9 for reflow solder profiles) TSOL 260 for 10 sec °C 250 mW 2.94 mW/°C 60 mA TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD EMITTER DC/Average Forward Input Current IF Reverse Input Voltage VR LED Power Dissipation @ TA = 25°C Derate above 25°C PD 6 V 120 mW 1.41 mW/°C DETECTOR Collector-Emitter Voltage VCEO 70 V Collector-Base Voltage VCBO 70 V Emitter-Collector Voltage VECO 7 V 150 mW 1.76 mW/°C Detector Power Dissipation @ TA = 25°C Derate above 25°C © 2005 Fairchild Semiconductor Corporation PD Page 2 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ* Max 0.8 1.18 1.5 0.9 1.28 1.7 0.7 1.05 1.4 Unit EMITTER Input Forward Voltage (IF = 10 mA) TA = 25°C TA = -55°C VF TA = 100°C (VR = 6.0 V) Reverse Leakage Current IR 10 V µA DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO 70 100 V Collector-Base Breakdown Voltage (IC = 100 µA, IF = 0) BVCBO 70 120 V Emitter-Collector Breakdown Voltage (IE = 100 µA, IF = 0) BVECO 7 10 V (VCE = 10 V, IF = 0) ICEO 1 (VCB = 10 V) ICBO 0.5 nA (VCE = 0 V, f = 1 MHz) CCE 8 pF Collector-Emitter Dark Current Collector-Base Dark Current Capacitance 50 nA ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions Symbol Min Typ* Max Units (f = 60 Hz, t = 1 sec) VISO 7500 Vac(pk) (VI-O = 500 VDC) RISO 1011 Ω (VI-O = 0 V, f = 1 MHz) CISO 0.2 2 pF Note * Typical values at TA = 25°C © 2005 Fairchild Semiconductor Corporation Page 3 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristic Test Conditions Symbol Device Min H11AV1 H11AV1A 100 H11AV2 H11AV2A 50 Typ* Max Unit 300 % Current Transfer Ratio, Collector to Emitter (IF = 10 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (IC = 2 mA, IF = 20 mA) VCE (SAT) All 0.4 V Non-Saturated Turn-on Time (IC = 2 mA, VCC = 10 V, RL = 100Ω) (Fig. 11) TON All 15 µs Non Saturated Turn-off Time (IC = 2 mA, VCC = 10 V, RL = 100Ω) (Fig. 11) TON All 15 µs CTR AC Characteristic * Typical values at TA = 25°C © 2005 Fairchild Semiconductor Corporation Page 4 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M TYPICAL PERFORMANCE CURVES Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized CTR vs. Forward Current 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 0.4 1.2 TA = 100°C 1.1 0.2 1.0 0.0 1 10 0 100 2 4 6 IF - LED FORWARD CURRENT (mA) 10 12 14 16 18 20 Fig. 4 CTR vs. RBE (Unsaturated) Fig. 3 Normalized CTR vs. Ambient Temperature 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.4 1.2 IF = 5 mA NORMALIZED CTR 8 IF - FORWARD CURRENT (mA) 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 Normalized to IF = 10 mA TA = 25°C 0.4 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0 0.2 -60 -40 -20 0 20 40 60 80 10 100 100 1000 RBE- BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 0.9 VCE= 0.3 V 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 0.1 0.0 10 100 RBE- BASE RESISTANCE (k Ω) 1000 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current Fig. 5 CTR vs. RBE (Saturated) 1.0 100 TA = 25˚C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 IF = 5 mA 0.001 0.01 IF = 10 mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) © 2005 Fairchild Semiconductor Corporation Page 5 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) IF = 10 mA VCC = 10 V TA = 25°C SWITCHING SPEED - (µs) H11AV2A-M 100 Toff 10 Tf Ton 1 Tr 0.1 4.5 VCC = 10 V IC = 2 mA RL = 100 Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 10 100 100 1000 10000 100000 RBE- BASE RESISTANCE (k Ω) R-LOAD RESISTOR (kΩ) Fig. 10 Dark Current vs. Ambient Temperature 10000 Fig. 9 Normalized toff vs. RBE NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10 V IC = 2 mA RL = 100 Ω 0.5 0.4 VCE = 10 V TA = 25°C ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 0.3 0.2 0.1 1000 100 10 1 0.1 0.01 0.001 10 100 1000 10000 100000 0 20 40 60 80 100 RBE- BASE RESISTANCE (k Ω) TA - AMBIENT TEMPERATURE (°C) TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 11. Switching Time Test Circuit and Waveforms © 2005 Fairchild Semiconductor Corporation Page 6 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M Package Dimensions (Through Hole) H11AV2A-M Package Dimensions (Surface Mount) 0.350 (8.89) 0.320 (8.13) 0.350 (8.89) 0.320 (8.13) Pin 1 ID Pin 1 ID 0.070 (1.77) 0.040 (1.02) 0.260 (6.60) 0.240 (6.10) Seating Plane SEATING PLANE 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.070 (1.77) 0.040 (1.02) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.20) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15° 0.390 (9.90) 0.332 (8.43) 0.100 [2.54] 0.035 (0.88) 0.012 (0.30) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.350 (8.89) 0.320 (8.13) PIN 1 ID 0.070 (1.78) 0.260 (6.60) 0.240 (6.10) 0.060 (1.52) SEATING PLANE 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.425 (10.79) 0.100 (2.54) 0.305 (7.75) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) NOTE All dimensions are in inches (millimeters) © 2005 Fairchild Semiconductor Corporation Page 7 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M ORDERING INFORMATION Order Entry Identifier Order Entry Identifier Option S Example Surface Mount Lead Bend H11AV1S-M SR2 Surface Mount; Tape and reel N/A 0.4" Lead Spacing V H11AV1SR2-M H11AV1A-M VDE 0884 H11AV1V-M N/A VDE 0884, 0.4" Lead Spacing H11AV1AV-M SV VDE 0884, Surface Mount H11AV1SV-M SR2V VDE 0884, Surface Mount, Tape & Reel H11AV1SR2V-M MARKING INFORMATION 1 V 3 H11AV1 2 X YY Q 6 4 5 White Package Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code • One digit for white package parts, e.g., ‘3’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code *Note – Parts built in the white package (M suffix) that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in the portrait format. © 2005 Fairchild Semiconductor Corporation Page 8 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M Carrier Tape Specifications 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) © 2005 Fairchild Semiconductor Corporation Page 9 of 10 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2005 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 10 of 10 6/15/05