MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL114 has a unipolar behavior: The output turns low with a magnetic south pole on the branded side of the package (see figures 3 and 4). The output turns high if the magnetic field is removed. The output signal remains high if the magnetic north pole approaches the branded side of the package. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from –40°C up to 150 °C. The HAL114 is available in a SMD-package (SOT-89A) and in a leaded version (TO-92UA). HAL114SO, HAL114UA A E C 114A 114E 114C Operating Junction Temperature Range (TJ) A: TJ = –40 °C to +170 °C E: TJ = –40 °C to +100 °C C: TJ = 0 °C to +100 °C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained on page 8. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, E, or C Package: SO for SOT-89A, UA for TO-92UA Type: 114 Features: – operates from 4.5 V to 24 V supply voltage – overvoltage protection Example: HAL114UA-E – reverse-voltage protection at VDD-pin → Type: 114 → Package: TO-92UA → Temperature Range: TJ = –40 °C to +100 °C – short-circuit protected open-drain output by thermal shutdown – operates with magnetic fields from DC to 20 kHz – stable magnetic switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic switching points – ideal sensor for contactless switches and speed measurement in hostile automotive and industrial environments Specifications Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. Solderability – Package SOT-89A: according to IEC68-2-58 – Package TO-92UA: according to IEC68-2-20 VDD 1 – switching type: unipolar 3 OUT – output turns low with magnetic south pole on branded side of package – output turns high if magnetic field is removed 2 GND Fig. 1: Pin configuration 2 MICRONAS INTERMETALL HAL114 Functional Description Outline Dimensions 4.55 ±0.1 The HAL114 is a CMOS integrated circuit with a switching output in response to magnetic fields. It processes the “Hall Voltage” internally: The Hall Voltage is proportional to the magnetic flux component Bz orthogonal to an integrated Hall Plate, in case an electric current is imposed to the plate. The HAL114 compares the Hall Voltage with a predefined threshold and generates the output signal dependent of the direction of the magnetic field. A special circuit compensates for the temperature dependent effects of the IC, as well as the external magnet. A built-in hysteresis eliminates possible oscillations of the output signal adjacent to its switching point so that “output bouncing” is avoided. The output is short-circuit protected by limiting high currents and by sensing excess temperature. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to –15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to –15 V. HAL114 VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control 0.7 y 2 4 ±0.2 2.6 ±0.1 top view 1 2 3 0.4 1.53 ±0.05 0.4 0.4 1.5 3.0 branded side 0.05 ±0.05 SPGS7001-6-A/2E Fig. 3: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm Short Circuit & Overvoltage Protection 4.06 ±0.1 1.5 ±0.05 Hall Plate sensitive area 1.7 0.125 Comparator OUT Output sensitive area 2.03 0.3 3 y 3.05 ±0.1 GND 0.5 2 0.48 Fig. 2: HAL114 block diagram 0.55 1 2 3.1 3 14.0 min. 0.36 0.42 Dimensions of Sensitive Area 1.27 1.27 2.54 0.4 mm x 0.2 mm branded side Positions of Sensitive Area 45° 0.8 SOT-89A TO-92UA SPGS7002-6-A/1E x = 0 ± 0.2 x = 0 ± 0.2 y = 0.98 ± 0.2 y = 1.0 ± 0.2 Fig. 4: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm x is referenced to the center of the package MICRONAS INTERMETALL 3 HAL114 Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 –15 281) V –VP Test Voltage for Supply 1 –242) – V –IDD Reverse Supply Current 1 – 501) mA IDDZ Supply Current through Protection Device 1 –2003) 2003) mA VO Output Voltage 3 –0.3 281) V IO Continuous Output On Current 3 – 30 mA IOmax Peak Output On Current 3 – 2503) mA IOZ Output Current through Protection Device 3 –2003) 2003) mA TS Storage Temperature Range –65 150 °C TJ Junction Temperature Range –40 –40 150 1704) °C 1) as long as T max is not exceeded J 2) with a 220 Ω series resistance at pin 3) t < 2 ms 4) t < 1000h 1 corresponding to test circuit 1 Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 4.5 – 24 V IO Continuous Output On Current 3 0 – 20 mA RV Series Resistor 1 – – 270 Ω Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Test Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V 4 Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VOL Output Voltage over Temperature Range 3 – 120 400 mV IOL = 12.5 mA VOL Output Voltage over Temperature Range 3 – 190 500 mV IOL = 20 mA IOH Output Leakage Current 3 – – 1 µA B < Boff, VOH = 24 V, TJ = 25 °C MICRONAS INTERMETALL HAL114 Electrical Characteristics, continued Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions IOH Output Leakage Current over Temperature Range 3 – – 10 µA B < Boff VOH = 24 V, TJ < 150 °C IDD Supply Current 1 6 8.2 11 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 3.9 8.2 12 mA ten(O) Enable Time of Output after Setting of VDD 3 – 6 10 µs VDD = 12 V tr Output Rise Time 3 – 85 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF tf Output Fall Time 3 – 60 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT-89A Thermal Resistance Junction to Substrate Backside – 150 200 K/W Fiberglass Substrate pad size see Fig. 6 RthJA case TO-92UA Thermal Resistance Junction to Soldering Point – 150 200 K/W Leads at ambient temperature at a distance of 2 mm from case Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. –40 °C Parameter 25 °C 100 °C 170 °C Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. On point BON 7.5 21.5 36.0 7.0 21.3 34.0 6.3 19.6 31.5 6.0 19.2 31.0 mT Off point BOFF 4.3 17.4 33.2 4.0 17.6 31.2 3.6 16.1 28.9 3.6 15.8 28.8 mT Hysteresis BHYS 2.8 4.1 5.0 2.8 3.7 4.5 2.6 3.5 4.0 2.2 3.4 4.0 mT Output Voltage 5.0 2.0 0 BOFF min BOFF BON 2.0 BON max BHYS 1.0 Fig. 5: Definition of switching points and hysteresis MICRONAS INTERMETALL Fig. 6: Recommended pad size SOT-89A Dimensions in mm 5 HAL114 mT 30 mT 30 VDD = 12 V BON BOFF BON BOFF 25 25 BON 20 20 BOFF 15 15 10 TA = –40 °C 10 TA = 25 °C TA = 150 °C 5 5 0 –50 0 50 100 150 0 200 °C 3 4 5 6 TA 8 V VDD Fig. 7: Typical magnetic switching points versus temperature Fig. 9: Typical magnetic switching points versus supply voltage mT 30 BON BOFF 7 mA 15 25 IDD TA = –40 °C 10 TA = 25 °C 20 5 15 0 TA = –40 °C 10 TA = 150 °C –5 TA = 25 °C TA = 150 °C 5 0 –10 0 5 10 15 20 25 30 V VDD Fig. 8: Typical magnetic switching points versus supply voltage 6 –15 –15 –10 –5 0 5 10 15 20 25 30 V VDD Fig. 10: Typical supply current versus supply voltage MICRONAS INTERMETALL HAL114 mV 500 mA 12 IO = 12.5 mA IDD TA = –40 °C 10 VOL 400 TA = 25 °C 8 300 TA = 150 °C 6 TA = 150 °C 200 4 TA = 25 °C 100 2 0 TA = –40 °C 0 2 4 6 8 V 0 0 5 10 15 20 25 30 V VDD VDD Fig. 11: Typical supply current versus supply voltage Fig. 13: Typical output low voltage versus supply voltage mV 500 mA 12 VDD = 12 V IDD 10 IO = 20 mA VOL 400 VDD = 4.5 V 8 VDD = 24 V 300 6 200 4 IO = 12.5 mA 100 2 0 –50 0 50 100 150 TA Fig. 12: Typical supply current versus temperature MICRONAS INTERMETALL 200 °C 0 –50 0 50 100 150 200 °C TA Fig. 14: Typical output low voltage versus temperature 7 HAL114 RV 220 Ω µA 2 10 1 OUT VDD IOH RL VDD 3 1 10 4.7 nF VOH = 24 V VDD = 5 V 0 10 2 –1 10 GND Fig. 16: Recommended application circuit –2 10 Ambient Temperature –3 10 Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). –4 10 –50 0 50 100 150 200 °C TA Fig. 15: Typical output leakage current versus temperature Application Note For electromagnetic immunity, it is recommended to apply a 330 pF minimum capacitor between VDD (pin 1) and Ground (pin 2). TJ = TA + ∆T At static conditions, the following equations are valid: – for SOT-89A: ∆T = IDD * VDD * RthJSB – for TO-92UA: ∆T = IDD * VDD * RthJA For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Data Sheet History For applications requiring robustness to conducted disturbances (transients), a 220 Ω series resistor to pin 1 and a 4.7 nF capacitor between VDD (pin1) and Ground (pin 2) is recommended. The series resistor and the capacitor should be placed as close as possible to the IC. 1. Final data sheet: “HAL114 Unipolar Hall Switch IC”, June 10, 1998, 6251-456-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: http://www.intermetall.de All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. However, our prior consent must be obtained in all cases. Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (06/98) Order No. 6251-456-1DS 8 MICRONAS INTERMETALL End of Data Sheet Multimedia ICs MICRONAS Back to Summary Back to Data Sheets