ETC HAL320

MICRONAS
Edition July 15, 1998
6251-439-1DS
HAL320
Differential Hall Effect
Sensor IC
MICRONAS
HAL320
Differential Hall Effect Sensor IC
in CMOS technology
Introduction
– reverse-voltage protection of VDD-pin
– short-circuit protected open-drain output by thermal
shutdown
– operates with magnetic fields from DC to 10 kHz
The HAL 320 is a differential Hall switch produced in
CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.25 mm apart) with active offset compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig. 2).
The HAL 320 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with
a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off. The sensor has a bipolar switching
behavior and requires positive and negative values of
∆B = BS1 – BS2 for correct operation.
Basically, there are two ways to generate the differential
signal ∆B:
– Rotating a multi-pole-ring in front of the branded side
of the package (see Fig. 4, Fig. 5, and Fig. 6).
– Back-bias applications:
A magnet on the back side of the package generates
a back-bias field at both Hall plates. The differential
signal ∆B results from the magnetic modulation of the
back-bias field by a rotating ferromagnetic target.
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature.
The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from –40 °C
up to 150 °C.
The HAL 320 is an ideal sensor for target wheel applications, ignition timing, anti-lock brake systems, and revolution counting in extreme automotive and industrial environments
The HAL 320 is available in two SMD-packages
(SOT-89A and SOT-89B) and in a leaded version
(TO-92UA).
Features:
– distance between Hall plates: 2.25 mm
– operates from 4.5 V to 24 V supply voltage
– switching offset compensation at 62 kHz
– overvoltage protection
2
– output turns low with magnetic south pole on branded
side of package and with a higher magnetic flux density in sensitive area S1 as in S2
– on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range
– EMC corresponding to DIN 40839
Marking Code
Type
HAL320SF,
HAL320SO,
HAL320UA
Temperature Range
A
E
C
320A
320E
320C
Operating Junction Temperature Range (TJ)
A: TJ = –40 °C to +170 °C
E: TJ = –40 °C to +100 °C
C: TJ = 0 °C to +100 °C
The relationship between ambient temperature (TA) and
junction temperature (TJ) is explained on page 11.
Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A, E, or C
Package: SF for SOT-89B
SO for SOT-89A
UA for TO-92UA
Type: 320
Example: HAL320UA-E
→ Type: 320
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
Micronas
HAL320
HAL320
Solderability
– Package SOT-89A and SOT-89B: according to
IEC68-2-58
VDD
1
– Package TO-92UA: according to IEC68-2-20
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
S1
Short Circuit &
Overvoltage
Protection
Hysteresis
Control
Comparator
Switch
VDD
1
OUT
Output
3
Hall Plate
S2
3
OUT
Clock
GND
2
GND
Fig. 1: Pin configuration
Functional Description
This Hall effect sensor is a monolithic integrated circuit
with 2 Hall plates 2.25 mm apart that switches in response to differential magnetic fields. If magnetic fields
with flux lines at right angles to the sensitive areas are
applied to the sensor, the biased Hall plates force Hall
voltages proportional to these fields. The difference of
the Hall voltages is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the differential
magnetic field exceeds the threshold levels, the open
drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation.
2
Fig. 2: HAL320 block diagram
fosc
t
DB
DBON
t
VOUT
VOH
VOL
t
IDD
Magnetic offset caused by mechanical stress at the Hall
plates is compensated for by using the “switching offset
compensation technique”: An internal oscillator provides a two phase clock (see Fig. 3). The difference of
the Hall voltages is sampled at the end of the first phase.
At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the
actual switching point. Subsequently, the open drain
output switches to the appropriate state. The amount of
time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between
zero and 1/fosc.
1/fosc = 16 µs
tf
t
Fig. 3: Timing diagram
Shunt protection devices clamp voltage peaks at the
Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-Pin for values
ranging from 0 V to –15 V.
Micronas
3
HAL320
Outline Dimensions
4.55 ±0.1
0.7
x1
0.3
y
x2
sensitive area S2
y
2
4 ±0.2
2.6 ±0.1
sensitive area S1
1.7
0.125
sensitive area S2
2
4 ±0.2
4.55 ±0.1
sensitive area S1
1.7
0.125
x1
x2
2.55 ±0.1
top view
1
2
0.4
1.53 ±0.05
top view
3
1
0.4
2
0.4
1.15 ±0.05
3
0.4
0.4
0.4
1.5
1.5
3.0
3.0
branded side
branded side
0.06 ±0.04
0.06 ±0.04
SPGS7001-6-B3/1E
SPGS0022-2-B3/1E
Fig. 4:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
Fig. 6:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.04 g
Dimensions in mm
4.06 ±0.1
1.5 ±0.05
sensitive area S1
sensitive area S2
2.03
0.3
y
3.05 ±0.1
0.48
0.55
1
2
Positions of Sensitive Areas
3.1
3
SOT-89A
14.0
min.
0.36
SOT-89B
TO-92UA
x1 = –1.125 mm ± 0.2 mm
x2 = 1.125 mm ± 0.2 mm
0.42
x2 – x1 = 2.25 mm ± 0.01 mm
1.27 1.27
y = 0.98 mm
± 0.2 mm
2.54
branded side
45°
0.08 mm x 0.17 mm (each)
x2
0.5
x1
Dimensions of Sensitive Areas
y = 0.95 mm
± 0.2 mm
y = 1.0 mm
± 0.2 mm
x1 and x2 are referenced to the center of the package
0.8
SPGS7002-6-B/1E
Fig. 5:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
4
Micronas
HAL320
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
–VP
Test Voltage for Supply
1
–242)
–
V
–IDD
Reverse Supply Current
1
–
501)
mA
IDDZ
Supply Current through
Protection Device
1
–2003)
2003)
mA
VO
Output Voltage
3
–0.3
281)
V
IO
Continuous Output On Current
3
–
30
mA
IOmax
Peak Output On Current
3
–
2503)
mA
IOZ
Output Current through
Protection Device
3
–2003)
2003)
mA
TS
Storage Temperature Range
–65
150
°C
TJ
Junction Temperature Range
–40
–40
150
1704)
°C
1) as long as T max is not exceeded
J
2) with a 220 Ω series resistance at pin
3) t < 2 ms
4) t < 1000h
1 corresponding to test circuit 1
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.5
24
V
IO
Continuous Output On Current
3
–
20
mA
VO
Output Voltage
3
–
24
V
Rv
Series Resistor
1
–
270
Ω
Micronas
5
HAL320
Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
6
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.8
4.7
6.8
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.8
4.7
7.5
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32.5
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
–
28
32.5
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage
3
–
170
250
mV
VDD = 12 V, IO = 20 mA,
TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
–
170
400
mV
IO = 20 mA
VOL
Output Voltage over
Temperature Range
3
–
210
500
mV
IO = 25 mA
IOH
Output Leakage Current
3
–
–
1
µA
VOH = 4.5 V... 24 V,
DB < DBOFF , TJ = 25 °C
IOH
Output Leakage Current over
Temperature Range
3
–
–
10
µA
VOH = 4.5 V... 24 V,
DB < DBOFF , TJ ≤ 150 °C
fosc
Internal Oscillator
Chopper Frequency
–
42
62
75
kHz
TJ = 25 °C
fosc
Internal Oscillator Chopper Frequency over Temperature Range
–
40
62
80
kHz
ten(O)
Enable Time of Output
after Setting of VDD
3
–
35
–
µs
VDD = 12 V,
DB > DBON + 2mT or
DB < DBOFF – 2mT
tr
Output Rise Time
3
–
80
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
tf
Output Fall Time
3
–
50
400
ns
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
RthJSB
case
SOT-89A,
SOT-89B
Thermal Resistance Junction to
Substrate Backside
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 8
RthJS
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
–
150
200
K/W
Micronas
HAL320
Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points (Condition: –10 mT < B0 < 10 mT)
Positive flux density values refer to the magnetic south pole at the branded side ot the package. ∆B = BS1 – BS2
–40 °C
Parameter
Min.
25 °C
Typ.
Max.
Min.
100 °C
Typ.
Max.
Min.
170 °C
Typ.
Max.
Min.
Unit
Typ.
Max.
On point ∆BON
∆B > ∆BON
–1.5
1.2
2.5
-1.5
1.2
2.5
–2
1.2
3
–2.5
1.1
3.5
mT
Off point ∆BOFF
∆B < ∆BOFF
–2.5
–0.6
1.5
–2.5
–0.6
1.5
–3
–0.5
2
–3.5
–0.4
2.5
mT
1
1.8
4
1
1.8
4
1
1.7
4
0.8
1.5
4
mT
–2
0.3
2
–2
0.3
2
–2.5
0.4
2.5
0.4
3
mT
Hysteresis
∆BHYS = ∆BON – ∆BOFF
Offset ∆BOFFSET =
(∆BON + ∆BOFF)/2
–3
In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional offset
of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity mismatch generates the magnetic offset ∆BOFFSETbb = |S1 – S2|/S1 @ B0 + ∆BOFFSET.
Parameter
Sensitivity mismatch1)
1)
2)
|S1 – S2|/S1
–40 °C
25 °C
100 °C
170 °C
Unit
1.52)
1.02)
1.02)
0.52)
%
Mechanical stress from packaging can influence sensitivity mismatch.
All values are typical values.
The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT.
These magnetic parameters may change under external pressure and during the lifetime of the sensor.
25 °C
Parameter
Min.
Unit
Typ.
Max.
On point ∆BONbb
–4.5
1.5
5.5
mT
Off point ∆BOFFbb
–5.5
–0.3
4.5
mT
Hysteresis ∆BHYS
1
1.8
4
mT
–5
0.6
+5
mT
Offset ∆BOFFSETbb
5.0
Output Voltage
VOH
2.0
VOL
2.0
DBOFF min
DBOFF 0
DBHYS
DBON
DBON max
DB = BS1 – BS2
Fig. 7: Definition of switching points and hysteresis
Micronas
1.0
Fig. 8: Recommended pad size for SOT-89A and
SOT-89B; Dimensions in mm
7
HAL320
mT
2.0
mT
2.0
VDD = 12 V
BON 1.5
BOFF
BON
BOFF
1.5
BON
1.0
1.0
0.5
0.5
0.0
0.0
–0.5
–0.5
–1.0
–1.0
–1.5
–1.5
–2
–50
0
50
100
150
–2
200 °C
TA = –40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
BOFF
3
3.5
4.0
4.5
5.5
6.0 V
VDD
TA
Fig. 9: Magnetic switch points
versus temperature
Fig. 11: Magnetic switch points
versus supply voltage
mT
2.0
BON
BOFF
5.0
mA
15
1.5
BON
IDD
10
1.0
5
0.5
TA = –40 °C
TA = 25 °C
0.0
0
TA = 100 °C
TA = 150 °C
–0.5
TA = –40 °C
–5
TA = 25 °C
–1.0
TA = 150 °C
BOFF
–10
–1.5
–2
0
5
10
15
20
25
30 V
–15
–15 –10 –5
0
5
VDD
Fig. 10: Magnetic switch points
versus supply voltage
8
10 15 20 25 30 V
VDD
Fig. 12: Supply current
versus supply voltage
Micronas
HAL320
mA
8
kHz
100
VDD = 4.5 V...24 V
90
7
IDD
fosc
80
6
TA = –40 °C
70
TA = 25 °C
60
5
50
4
TA = 150 °C
3
40
30
2
20
1
0
10
1
2
3
4
5
0
–50
6 V
0
50
100
150
VDD
200 °C
TA
Fig. 13: Supply current
versus supply voltage
Fig. 15: Internal chopper frequency
versus ambient temperature
mV
400
mA
8
IO = 20 mA
7
350
IDD
VOL
6
300
5
250
TA = 170 °C
VDD = 12 V
4
VDD = 4.5 V
3
100
1
50
0
50
100
TA = 25 °C
150
2
0
–50
TA = 100 °C
200
150
200 °C
0
TA = –40 °C
0
5
10
15
20
Micronas
30 V
VDD
TA
Fig. 14: Supply current
versus ambient temperature
25
Fig. 16: Output low voltage
versus supply voltage
9
HAL320
mA
104
mV
600
IO = 20 mA
103
VOL
500
IOH 102
101
400
TA = 170 °C
TA = 150 °C
100
300
10–1
TA = 170 °C
TA = 100 °C
10–2
TA = 100 °C
200
10–3
TA = 25 °C
10–4
TA = 40 °C
100
TA = 25 °C
TA = –40 °C
10–5
0
3
4
5
6
10–6
15
7 V
20
25
30
VDD
35 V
VOH
Fig. 17: Output low voltage
versus supply voltage
Fig. 19: Output high current
versus output voltage
µA
mV
400
102
IO = 20 mA
101
VOL
IOH
300
VDD = 4.5 V
VOH = 24 V
100
VDD = 24 V
10–1
200
VOH = 4.5 V
10–2
10–3
100
10–4
0
–50
0
50
100
150
TA
Fig. 18: Output low voltage
versus ambient temperature
10
200 °C
10–5
–50
0
50
100
150
200 °C
TA
Fig. 20: Output leakage current
versus ambient temperature
Micronas
HAL320
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress on the sensor
must be avoided if the sensor is used under back-biased
conditions. This piezo sensitivity of the sensor IC cannot
be completely compensated for by the switching offset
compensation technique.
Recommended Test Circuits
for Electromagnetic Compatibility
Test pulses VEMC corresponding to DIN 40839.
RV
220 Ω
1
In order to assure switching the sensor on and off in a
back-biased application, the minimum magnetic modulation of the differential field should amount to more than
10% of the magnetic preinduction.
If the HAL 320 sensor IC is used in back-biased applications, please contact our Application Department. They
will provide assistance in avoiding applications which
may induce stress to the ICs. This stress may cause
drifts of the magnetic parameters indicated in this data
sheet.
For electromagnetic immunity, it is recommended to apply a 4.7 nF capacitor between VDD (pin 1) and Ground
(pin 2). For automotive applications, a 220 W series resistor to pin 1 is recommended. Because of the IDD peak
at 3.5 V, the series resistor should not be greater than
270 Ω. The series resistor and the capacitor should be
placed as close as possible to the IC. For optimal EMC
behavior, the test circuits in Fig. 21 and Fig. 22 are recommended.
RL
VDD
VEMC
VP
1.2 kΩ
OUT
3
4.7 nF
20 pF
2
GND
Fig. 21: Test circuit 2: test procedure for class A
RV
220 Ω
1
RL
VDD
680 Ω
OUT
VEMC
3
4.7 nF
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient temperature TA).
2
GND
Fig. 22: Test circuit 1: test procedure for class C
TJ = TA + ∆T
At static conditions, the following equations are valid:
– for SOT-89x:
∆T = IDD * VDD * RthJSB
– for TO-92UA:
∆T = IDD * VDD * RthJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Micronas
11
HAL320
Data Sheet History
1. Final data sheet: “HAL 320 Differential Hall Effect
Sensor IC”, July 15, 1998, 6251-439-1DS. First release
of the final data sheet.
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (07/1998)
Order No. 6251-439-1DS
12
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
Micronas
HAL 300, HAL 320
Data Sheet Supplement
Subject:
Improvement of SOT-89B Package
Data Sheet Concerned:
HAL 300, 6251-345-1DS, Edition July 15, 1998
HAL 320, 6251-439-1DS, Edition July 15, 1998
Supplement:
No. 1/ 6251-532-1DSS
Edition:
July 4, 2000
Changes:
– position tolerance of the sensitive area reduced
– tolerances of the outline dimensions reduced
– thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
– HAL 300 now available in SOT-89B
– SOT-89A will be discontinued in December 2000
sensitive area S1
4.55
∅ 0.2
1.7
0.15
sensitive area S2
0.3
∅ 0.2
2
y
4 ±0.2
x1
2.55
x2
min.
0.25
top view
1
1.15
2
3
0.4
0.4
0.4
1.5
3.0
branded side
0.06 ±0.04
SPGS0022-5-B3/1E
Position of sensitive area
HAL 300
HAL 320
x1+x2
(2.05±0.001) mm
(2.25±0.001) mm
x1= x2
1.025 mm nominal
1.125 mm nominal
y
0.95 mm nominal
0.95 mm nominal
Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerances of the sensitive areas are defined in the package diagram.
Micronas
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