Preliminary HAT2038R, HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Features • • • • For Automotive Application (at Type Code “J”) Low on-resistance Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Source Gate Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2038R HAT2038RJ Avalanche energy HAT2038R HAT2038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note 1 ID (pulse) IDR IAP Note 4 EAR Note 4 Pch Note 2 Note 3 Pch Tch Tstg Value 60 ±20 5 Unit V V A 40 5 — 5 — 2.14 2 A A — A — mJ W 3 150 –55 to +150 W °C °C PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 1 of 7 HAT2038R, HAT2038RJ Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT2038R Zero gate voltage drain current HAT2038RJ Zero gate voltage drain current HAT2038R HAT2038RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 2 of 7 Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) Min 60 ±20 — — — — — 1.2 — — 6 — — — — — — Typ — — — — — — — — 0.043 0.056 9 520 270 100 11 40 110 Max — — ±10 1 0.1 — 10 2.2 0.058 0.084 — — — — — — — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns ns tf VDF trr — — — 80 0.84 40 — 1.1 — ns V ns IDSS IDSS Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 5 ID = 3 A, VGS = 4 V Note 5 ID = 3 A, VDS = 10 V Note 5 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A, VDD ≅ 30 V IF = 5 A, VGS = 0 Note 5 IF = 5 A, VGS = 0 diF/dt = 50 A/μs HAT2038R, HAT2038RJ Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 3.0 ive Op er ion at Dr ive 1.0 er Op 1 0 Drain Current Dr 2.0 0 50 at ion 100 Ambient Temperature 10 10 PW DC 3 Op er 1 0.3 0.1 = 10 ion (P 3 ms W (1 s s sh No ≤1 0 10 Drain to Source Voltage Ta (°C) 0μ 1m at Operation in this area is limited by RDS (on) 0.03 Ta = 25°C 1 shot Pulse 0.01 0.1 0.3 1 200 150 10 μs 30 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 ot) te 6 s) 30 100 VDS (V) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 4V 3.5 V 3V 10 VDS = 10 V Pulse Test (A) Pulse Test 8 ID 8 10 V 6 6 4 2.5 V 2 Drain Current Drain Current ID (A) 10 25°C 4 Tc = 75°C –25°C 2 VGS = 2 V 0 0 0 2 4 6 Drain to Source Voltage 8 10 0 0.4 0.3 ID = 5 A 0.2 2A 0.1 1A 0 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 3 of 7 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 Gate to Source Voltage VDS (V) 0.5 1 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2038R, HAT2038RJ 0.20 Pulse Test 0.16 1, 2 A 0.12 ID = 5 A VGS = 4 V 0.08 1, 2, 5 A 0.04 10 V 0 –40 0 40 80 Case Temperature 120 Tc 160 50 VDS = 10 V Pulse Test 20 Tc = –25°C 10 5 25°C 75°C 2 1 0.5 0.1 2 5 10 2000 1000 Capacitance C (pF) 200 100 50 20 10 di / dt = 50 A / μs VGS = 0, Ta = 25°C 0.5 1 2 5 Crss 50 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 12 VDS VDD = 10 V 25 V 50 V 40 20 8 4 VDD = 50 V 25 V 10 V 0 0 8 16 Gate Charge 24 32 Qg (nc) REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 4 of 7 40 1000 Switching Time t (ns) VGS VGS (V) Reverse Drain Current IDR (A) 80 0 100 10 ID = 5 A 60 Coss 200 10 0.2 20 100 Ciss 500 20 Gate to Source Voltage Reverse Recovery Time trr (ns) 1 Typical Capacitance vs. Drain to Source Voltage 500 5 0.1 VDS (V) 0.5 Drain Current ID (A) (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 0.2 300 td(off) 100 tf tr 30 td(on) 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % 0.2 0.5 1 Drain Current 2 ID (A) 5 10 HAT2038R, HAT2038RJ Preliminary Reverse Drain Current IDR (A) 10 8 6 10 V 5V 4 VGS = 0, –5 V 2 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage 2.0 2.5 IAP = 5 A VDD = 25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 75 100 125 Channel Temperature Tch (°C) VSD (V) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 ot pu D= PDM lse PW T PW T h 1s 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.0001 10 μ D= PDM e uls 0.001 tp PW T PW T o sh 1 100 μ 1m 10 m 100 m 1 Pulse Width PW (S) REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 5 of 7 150 10 100 1000 10000 HAT2038R, HAT2038RJ Preliminary Avalanche Test Circuit Avalanche Waveform L VDS Monitor 1 • L • IAP2 • 2 EAR = VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor D.U.T. Vin 10% RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td(on) REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 6 of 7 10% tr 90% td(off) tf HAT2038R, HAT2038RJ Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part Name HAT2038R-EL-E HAT2038RJ-EL-E Quantity 2500 pcs 2500 pcs REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 7 of 7 Shipping Container Taping Taping D E A2 A1 A bp b1 c c1 Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 8° 0° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. 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