HAT2129H Silicon N Channel Power MOS FET Power Switching ADE-208-1577B(Z) Preliminary 3rd. Edition Aug. 2002 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 5 D 4 G 3 1 2 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2129H Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID(pulse)Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 3 20 A EAR Note 3 32 mJ Channel dissipation Pch Note2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to + 150 °C Avalanche energy Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2, Aug. 2002, page 2 of 5 HAT2129H Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ± 10 µA VGS = ±16 V, VDS = 0 Zero gate voltege drain current IDSS — — 1 µA VDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 6.0 7.5 mΩ ID = 15 A, VGS = 10 V resistance RDS(on) — 7.0 9.5 mΩ ID = 15 A, VGS = 7 V Forward transfer admittance |yfs| 24 40 — S ID = 15 A, VDS = 10 V Input capacitance Ciss — 3200 — pF VDS = 10 V Output capacitance Coss — 450 — pF VGS = 0 Reverse transfer capacitance Crss — 260 — pF f = 1 MHz Total gate charge Qg — 46 — nc VDD = 10 V Gate to source charge Qgs — 13.5 — nc VGS = 10 V Gate to drain charge Qgd — 7.5 — nc ID = 30 A Turn-on delay time td(on) — 22 — ns VGS = 10 V, ID = 15 A Rise time tr — 33 — ns VDD ≅ 10 V Turn-off delay time td(off) — 67 — ns RL = 0.67 Ω Fall time tf — 11 — ns Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 30 A, VGS = 0 — 50 — ns IF = 30 A, VGS = 0 diF/ dt = 50 A/ µs Body–drain diode reverse recovery trr time Note3 Note3 Note3 Note3 Notes: 3. Pulse test Rev.2, Aug. 2002, page 3 of 5 HAT2129H Package Dimensions As of January, 2002 Unit: mm 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0˚ – 8˚ +0.25 +0.05 0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M Hitachi Code JEDEC JEITA Mass (reference value) Rev.2, Aug. 2002, page 4 of 5 LFPAK — — 0.080 g HAT2129H Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.2, Aug. 2002, page 5 of 5