HCC4007UB HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER . . . . .. STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPHL, tPLH = 30ns (typ.) AT 10V QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE INPUT CURRENT OF 100nA AT 18V AND 25oC FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD No 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES” EY (Plastic Package) F (Ceramic Package) M1 (Micro Package) C1 (Chip Carrier) ORDER CODES : HCC4007UBF HCF4007UBM1 HCF4007UBEY HCF4007UBC1 PIN CONNECTIONS DESCRIPTION The HCC4007UB is a monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC4007UB type is comprised of three n-channel and three p-channel enhancement type MOS transistors. The transistor elements are accessible through the package terminals to provide a convenient means for constructing the various typical circuits as shown in typical applications. More complex functions are possible using multiple packages. Numbers shown in parentheses indicate terminals that are connected together to form the varius configurations listed. September 1988 1/14 HCC/HCF4007UB FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATING Symbol VDD * Vi II Ptot Parameter Supply Voltage: HCC Types HCF Types Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package Temperature Range Value Unit -0.5 to +20 -0.5 to +18 V V -0.5 to VDD + 0.5 ± 10 V mA 200 mW 100 mW Top Operating Temperature: HCC Types HCF Types -55 to +125 -40 to +85 o Tstg Storage Temperature -65 to +150 o o C C C Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD VI Top 2/14 Parameter Supply Voltage: HCC Types HCF Types Input Voltage Operating Temperature: HCC Types HCF Types Value Unit 3 to 18 3 to 15 0 to VDD V V V -55 to +125 -40 to +85 o o C C HCC/HCF4007UB SCHEMATIC DIAGRAM (showing input, output and parasitic diodes) ▲ COS/MOS OUTPUT PROTECTION NETWORK BETWEEN TERMINAL NOS. 1, 2, 4, 5, 8, 9, 11, 12, 13, AND THE CORRESPONDING DRAINS AND/OR SOURCES ❋ COS/MOS INPUT PROTECTION NETWORK PARASITIC AND NETWORK COMPONENTS D1 = N+ TO P WELL D2 = P+ TO SUBSTRATE R1 = 1 - 5 KΩ R2 = 15 - 30 Ω 3/14 HCC/HCF4007UB STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditios Symbol IL Parameter Quiescent Current HCC Types HCF Types V OH VOL Output High Voltage Output Low Voltage VI (V) VO (V) V IL IOH HCF Types IOL Output Sink Current HCC Types HCF Types IIH, IIL CI Input Leakage Current HCC Types HCF Types Input Capacitance 25 oC Min. Typ. Max. THIGH * Min. Max. 0.25 0.01 0.25 7.5 0/10 0/15 10 15 0.5 1 0.01 0.01 0.5 1 15 30 0/20 20 5 0.02 5 150 0/5 5 1 0.01 1 7.5 0/10 10 2 0.01 2 15 0/15 0/5 4 0.01 4 <1 15 5 4.95 4.95 4.95 0/10 <1 10 9.95 9.95 9.95 0/15 5/0 <1 <1 15 5 14.95 10/0 <1 10 0.5/4.5 <1 <1 15 5 4 4 4 1/9 <1 10 8 8 8 1.5/13.5 4.5/0.5 <1 <1 15 5 12.5 9/1 <1 10 13.5/1.5 2.5 <1 0/5 15 5 -2 -1.6 -3.2 -1.15 0/5 4.6 5 -0.64 -0.51 -1 -0.36 0/10 0/15 9.5 13.5 10 15 -1.6 -4.2 -1.3 -3.4 -2.6 -6.8 -0.9 -2.4 0/5 2.5 5 -1.53 -1.36 -3.2 -1.1 0/5 0/10 4.6 9.5 5 10 -0.52 -1.3 -0.44 -1.1 -1 -2.6 -0.36 -0.9 0/15 13.5 15 -3.6 -3.0 -6.8 -2.4 0/5 0/10 0.4 0.5 5 10 0.64 1.6 0.51 1.3 1 2.6 0.36 0.9 0/15 1.5 15 4.2 3.4 6.8 2.4 0/5 0/10 0.4 0.5 5 10 0.52 1.3 0.44 1.1 1 2.6 0.36 0.9 0/15 1.5 15 3.6 3.0 6.8 2.4 Input Low Voltage HCC Types TLOW * Min. Max. 5 Input High Voltage Output Drive Current |IO| VDD (µA) (V) 0/5 15/0 VIH Value 0/18 14.95 Any Input V 14.95 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 12.5 V 0.05 V 12.5 1 1 1 2 2 2 2.5 2.5 mA mA 18 ±0.1 ±10-5 ±0.1 ±1 15 ±0.3 ±10 ±0.3 ±1 5 -5 V 2.5 7.5 * TLOW = -55 oC for HCC device: -40 oC for HCF device. * THIGH = +125 oC for HCC device: +85 oC for HCF device. The Noise Margin for both ”1” and ”0” level is: 1V min. with VDD = 5 V, 2 V min. with VDD = 10 V, 2.5 V min. with VDD = 15 V 4/14 µA 30 Any Input 0/15 Unit µA pF HCC/HCF4007UB DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 o C, C L = 50 pF, RL = 200 KΩ, o typical temperature coefficent for all VDD values is 03 %/ C, all input rise and fall times= 20 ns) Symbol Parameter tPLH tPHL Propagation Delay Time tTLH tTHL Transition Time Test Conditions VDD (V) Min. Value Typ. Max. 5 55 110 10 15 30 25 60 50 5 100 200 10 15 50 40 100 80 Unit ns ns Minimum and Maximum Voltage Transfer Characterisctics for Inverter and test Circuit Typical Current and Voltage Transfer Characteristics for Inverter and Test Circuit 5/14 HCC/HCF4007UB Typical Voltage Transfer Characteristics for NAND Gate and Test Circuit Typical Voltage Transfer Characteristics for NOR Gate and Test Circuit Typical Output Low (Sink) Current Caracteristics 6/14 Minimum Output Low (Sink) Current Characteristics HCC/HCF4007UB Typical Output High (Source) Current Characteristics Minimum Output High (Sourrce) Current Characteristics Typical Voltage Transfer Characteristics as a Function of Temperature Typical Propagation Delay Time vs. Load Capacitance Typical Transition Time vs. Load Capacitance Typical Dissipatio Per Gate vs. Frequency Characteristics 7/14 HCC/HCF4007UB TYPICAL APPLICATIONS (Sample COS/MOS logic circuit arrangements using type 4007UB) Triple Inverters: (14, 2, 11); (8, 13); (1, 5); (4, 7, 9). 3-Input NOR Gate: (13, 2); (1, 11); (12, 5, 8); (4, 7, 9). 3-Input NAND Gate: (1, 12, 13); (2, 14, 11); (4, 8); (5, 9). High Sink Current Driver: (6, 3, 10); (8, 5, 12); (11, 14); (4, 7, 9). High Source Current Driver: (6, 3, 10); (13, 1, 12); (14, 2, 11); (7, 9). High Sink and Source Current Driver: (6, 3, 10); (14, 2, 11); (7, 4, 9); (13, 8, 1, 5, 12). 8/14 HCC/HCF4007UB Dual Bidirectional Trasmission Gating: (1, 5, 12); (2, 9); (11, 4); (8, 13, 10); (6, 3). TEST CIRCUIT Quiescent Device Current. Input Voltage. Input Leakage Current. 9/14 HCC/HCF4007UB Plastic DIP14 MECHANICAL DATA mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 10/14 HCC/HCF4007UB Ceramic DIP14/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7.0 0.276 D E 3.3 0.130 0.38 e3 0.015 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053C 11/14 HCC/HCF4007UB SO14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 E 5.8 8.75 0.336 6.2 0.228 0.344 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) P013G 12/14 HCC/HCF4007UB PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 13/14 HCC/HCF4007UB Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 14/14