HL6319/20G AlGaInP Laser Diodes Description The HL6319/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers • Measurement Features • • • • Visible light output: 635nm Typ (nearly equal to He-Ne gas laser) Optical output power: 10 mW CW Low operating current: 95 mA Max Low operating voltage: 2.7 V Max 117 HL6319/20G Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 10 mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 10 — — mW Kink free Threshold current Ith 20 50 75 mA Operating current I OP — 70 95 mA PO = 10 mW Operating voltage VOP — — 2.7 V PO = 10 mW Slope efficiency ηs 0.3 0.5 0.7 mW/mA 6(mW)/(I(8mW)–I(2mW)) Lasing wavelength λp 625 635 640 nm PO = 10 mW Beam divergence (parallel) θ// 5 8 11 deg. PO = 10 mW Beam divergence (perpendicular) θ⊥ 25 31 37 deg. PO = 10 mW Monitor current Is 0.05 0.17 0.30 mA PO = 10 mW, VR(PD) = 5 V 118 HL6319/20G Typical Characteristics Curves 119 HL6319/20G 120 HL6319/20G 121 HL6319/20G Polarization direction The polarization direction is TM mode. The polarization of 0.63 µm LD’s is different from that of 0.83/0.78/0.67 µm LD’s. The polarization direction of 0.63 µm LD’s is illustrated in the figure below. 122