HL6324MG AlGaInP Laser Diode ADE-208-737 (Z) Preliminary 1st Edition January 1999 Description The HL6324MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light sources for laser pointers and optical equipments for amusement. Application • Laser pointer Features • • • • • Visible light output Optical output power Low operating current Low operating voltage TM mode oscillation : 635 nm Typ (nearly equal to He-Ne gas laser) : 3 mW CW : 30 mA Typ : 2.7 V Max Package Type • HL6324MG: MG Internal Circuit 1 3 PD LD 2 HL6324MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Value Unit Optical output power PO 3 mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +50 °C Storage temperature Tstg –40 to +85 °C Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Condition Optical output power PO 3 — — mW Kink free * Threshold current Ith — 25 35 mA Operating current I OP — 30 42 mA PO = 3 mW Operating voltage VOP — — 2.7 V PO = 3 mW Lasing wavelength λp 630 635 640 nm PO = 3 mW Beam divergence parallel to the junction θ// 6 8 10 deg. PO = 3 mW Beam divergence parpendicular to the junction θ⊥ 23 30 39 deg. PO = 3 mW Monitor current IS 0.08 0.15 0.4 mA PO = 3 mW, VR(PD) = 5 V Note: Kink free is confirmed at the temperature of 25°C. 2 HL6324MG Package Dimensions Unit: mm 0.4 +0.1 −0 φ 5.6 +0 −0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 − φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) LD/MG 0.3 g 3 HL6324MG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 4 HL6324MG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://www.hitachi.com.sg/grp3/sicd http://www.hitachi.co.jp/Sicd/index.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. Taipei Branch Office 3rd Flr, Hung Kuo Building, No.167, Tun Hwa North Road, Taipei (105) Taiwan Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Telex: 23222 HAS-TP Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7th Flr, North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 1.0 5