HITTITE HMC372LP3

HMC372LP3 / 372LP3E
v03.0610
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Typical Applications
Features
The HMC372LP3 / HMC372LP3E is ideal for
basestation receivers:
Noise Figure: < 1 dB
• GSM, GPRS & EDGE
Gain: 15 dB
• CDMA & W-CDMA
Very Stable Gain vs. Supply & Temperature
• Private Land Mobile Radio
Single Supply: +5V @ 100 mA
Output IP3: +34 dBm
50 Ohm Matched Output
Functional Diagram
General Description
The HMC372LP3 & HMC372LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 1 dB noise figure, 15
dB gain and +34 dBm output IP3 from a single supply
of +5V @ 100 mA. Input and output return losses are
25 and 14 dB respectively with the LNA requiring only
four external components to optimize the RF Input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC617LP3(E).
Electrical Specifi cations, TA = +25° C, Vs = +5V
Parameter
Min.
Frequency Range
Gain
12.5
Gain Variation Over Temperature
Max.
Min.
Typ.
Max.
700 - 1000
14.5
11.5
Units
MHz
14.5
dB
0.008
0.015
0.008
0.015
Noise Figure
1.0
1.3
1.0
1.3
Input Return Loss
25
25
dB
Output Return Loss
14
12
dB
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
7 - 52
Typ.
810 - 960
20
18
21
17
23.5
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
34
Supply Current (Idd)
100
30
dB / °C
dB
22
dB
20
dBm
22.5
dBm
33
dBm
100
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
1.2
21
1.1
20
1
19
0.9
GAIN (dB) & P1dB (dBm)
RESPONSE (dB)
5
S21
S11
S22
0
-5
-10
-15
-20
-25
0.6
15
0.5
0.4
-35
13
-40
12
4.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
1.75
2
Noise Figure
0.2
4.75
5
5.25
5.5
Noise Figure vs. Temperature
1.5
20
19
1.4
18
1.3
NOISE FIGURE (dB)
+ 25 C
+ 85 C
- 40 C
17
16
15
14
13
1.2
1.1
1
0.9
0.8
12
0.7
11
0.6
10
+ 25 C
+ 85 C
- 40 C
0.5
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
0.7
1
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
0.95
1
Noise Figure vs. Vdd
Gain vs. Vdd
1.5
20
19
1.4
18
1.3
NOISE FIGURE (dB)
+ 4.5 V
+ 5.0 V
+ 5.5 V
17
16
15
14
13
1.1
1
0.9
0.8
0.7
11
0.6
10
+ 4.5 V
+ 5.0 V
+ 5.5 V
1.2
12
0.7
0.3
VOLTAGE SUPPLY (Vdd)
Gain vs. Temperature
0.7
0.7
16
-30
0.5
0.8
Gain
P1dB
17
14
0.25
GAIN (dB)
18
AMPLIFIERS - LOW NOISE - SMT
22
15
NOISE FIGURE (dB)
20
10
GAIN (dB)
7
Gain, Noise Figure &
Power vs. Supply Voltage @ 850MHz
Broadband Gain & Return Loss
0.5
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 53
HMC372LP3 / 372LP3E
v03.0610
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-2
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
+ 25 C
+ 85 C
- 40 C
-15
-20
-25
-30
-6
+25 C
+85 C
-40 C
-8
-10
-12
-14
-16
-35
-18
-20
-40
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
Output IP3 vs. Temperature
0.7
COMPRESSION POINT (dBm)
38
+ 25 C
+ 85 C
- 40 C
37
36
35
34
33
32
31
0.95
1
0.95
1
23
PSAT
22
21
20
P1dB
19
+25 C
+85 C
-40 C
18
17
15
0.75
0.8
0.85
0.9
0.95
1
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
P1dB vs. Vdd
40
25
39
24
38
23
+ 4.5 V
+ 5.0 V
+ 5.5 V
37
22
P1dB (dBm)
OUTPUT IP3 (dBm)
1
16
Output IP3 vs. Vdd
36
35
34
21
20
19
33
18
32
17
31
16
30
7 - 54
0.95
24
FREQUENCY (GHz)
0.7
0.8
0.85
0.9
FREQUENCY (GHz)
25
39
30
0.7
0.75
P1dB & Psat vs. Temperature
40
OUTPUT IP3 (dBm)
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
+ 4.5 V
+ 5.0 V
+ 5.5 V
15
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Output IP3 vs. Input Power @ 950 MHz
39
1 MHz Tone Separation
6 MHz Tone Separation
-5
ISOLATION (dB)
38
37
36
35
34
+25 C
+85 C
-40 C
-10
-15
-20
33
32
-25
31
-30
30
-20
-15
-10
-5
INPUT POWER PER TONE (dBM)
Absolute Maximum Ratings
0
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
Typical Supply Current vs. Vdd
+8.0 Vdc
Vdd (Vdc)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
+15 dBm
+4.5
98
Channel Temperature
150 °C
+5.0
100
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C)
1.015 W
+5.5
102
Thermal Resistance
(channel to ground paddle)
64.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Drain Bias Voltage (Vdd)
1
Idd (mA)
AMPLIFIERS - LOW NOISE - SMT
0
40
OUTPUT IP3 (dBm)
7
Reverse Isolation vs. Temperature
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 55
HMC372LP3 / 372LP3E
v03.0610
Outline Drawing
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC372LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC372LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H372
XXXX
[2]
H372
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
7 - 56
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Pin Number
Function
Description
1, 5, 8, 9
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
2, 4, 6, 10, 12,
13, 14, 16
GND
These pins must be connected to RF/DC ground.
3
RF IN
This pin is matched to 50 Ohms with a 22 nH
inductor to ground. See Application Circuit.
ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
Vdd
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
RF OUT
This pin is AC coupled and matched to 50 Ohms.
Interface Schematic
7, 15
11
Application Circuit
AMPLIFIERS - LOW NOISE - SMT
7
Pin Descriptions
Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 μF ±10% capacitor is recommended.
Note 2: L1, L2 and C1 should be located as close to the pins as possible.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 57
HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Evaluation PCB
AMPLIFIERS - LOW NOISE - SMT
7
List of Materials for Evaluation PCB 106821 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J4
DC Pin
C1
10000 pF Capacitor, 0402 Pkg.
C2
10000 pF Capacitor, 0060 Pkg.
L1
22nH Inductor, 0402 Pkg.
L2
18nH Inductor, 0603 Pkg.
U1
HMC372LP3 / HMC372LP3E Amplifier
PCB [2]
106722 Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
7 - 58
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC372LP3 / 372LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
7
AMPLIFIERS - LOW NOISE - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 59