HANBIT HMS12832M4V-8

HANBit
HMS12832M4V
SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM
Part No. HMS12832M4V
GENERAL DESCRIPTION
The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in
a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit
board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four
chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE)
and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
PIN ASSIGNMENT
w Access times : 8, 10, 12, 15 and 20ns
w High-density 512KByte design
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
w High-reliability, high-speed design
w Single + 3.3V ±0.3V power supply
w Easy memory expansion with /CE and /OE functions
w All inputs and outputs are TTL-compatible
w Industry-standard pinout
w FR4-PCB design
OPTIONS
MARKING
w Timing
1
Vss
17
A2
33
/CE4
49
A4
2
NC
18
A9
34
/CE3
50
A11
3
NC
19
DQ12
35
NC
51
A5
4
DQ0
20
DQ4
36
A16
52
A12
5
DQ8
21
DQ13
37
/OE
53
Vcc
6
DQ1
22
DQ5
38
Vss
54
A13
7
DQ9
23
DQ14
39
DQ24
55
A6
8
DQ2
24
DQ6
40
DQ16
56
DQ20
9
DQ10
25
DQ15
41
DQ25
57
DQ28
10
DQ3
26
DQ7
42
DQ17
58
DQ21
8ns access
- 8
11
DQ11
27
Vss
43
DQ26
59
DQ29
10ns access
-10
12
Vcc
28
/WE
44
DQ18
60
DQ22
12ns access
-12
13
A0
29
A15
45
DQ27
61
DQ30
15ns access
-15
14
A7
30
A14
46
DQ19
62
DQ23
-20
15
A1
31
/CE2
47
A3
63
DQ31
16
A8
32
/CE1
48
A10
64
Vss
20ns access
w Packages
64-pin SIMM
M
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
1
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A16
32
17
A0-16
/WE
DQ 0-7
U1
/OE
/CE
/CE1
A0-16
/WE
DQ 8-15
U2
/OE
/CE
/CE2
A0-16
/WE
DQ16-23
U3
/OE
/CE
/CE3
A0-16
/WE
/WE
/OE
/OE
DQ24-31
U4
/CE
PRESENCE-DETECT
/CE4
PD0 = Open
PD1 = Open
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
2
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to 4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to 4.6V
Power Dissipation
PD
4.0W
o
-65 C to +150oC
0oC to +70oC
Voltage on Any Pin Relative to Vss
Storage Temperature
TSTG
Operating Temperature
TA
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
*
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
3.0V
3.3V
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.2
-
Vcc+0.5V**
Input Low Voltage
VIL
-0.5*
-
0.8V
VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA
DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 10% )
PARAMETER
TEST CONDITIONS
Input Leakage Current
VIN=Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
Output Leakage Current
VOUT=Vss to VCC
SYMBOL
MIN
MAX
UNITS
ILI
-8
8
µA
IL0
-8
8
µA
2.4
Output High Voltage
IOH = -4.0mA
VOH
Output Low Voltage
IOL = 8.0mA
VOL
V
0.4
V
* Vcc=3.3V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
SYMBOL
Rev. 1.0 (September / 2002).
UNIT
-8
-10
-12
ICC
640
620
600
mA
ISB
200
200
200
mA
ISB1
20
20
20
mA
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
Min. Cycle, /CE=VIH
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
URL: www.hbe.co.kr
MAX
3
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
CAPACITANCE (TA =25 oC , f= 1.0Mhz)
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
SYMBOL
MAX
UNIT
VI/O=0V
CI/O
32
PF
CIN
24
PF
VIN=0V
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified)
Test conditions
PARAMETER
VALUE
Input Pulse Level
0V to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (B)
Output Load (A)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
VL=1.5V
+3.3V
50Ω
DOUT
319Ω
DOUT
Z0=50Ω
353Ω
30pF
5pF*
READ CYCLE
-10
PARAMETER
-12
-15
SYMBOL
UNIT
MIN
MAX
MAX
MAX
tRC
Address Access Time
tAA
10
12
15
ns
Chip Select to Output
tCO
10
12
15
ns
Output Enable to Output
tOE
5
6
7
ns
Output Enable to Low-Z Output
tOLZ
0
0
0
ns
Chip Enable to Low-Z Output
tLZ
3
3
3
ns
Output Disable to High-Z Output
tOHZ
0
5
0
6
0
7
ns
Chip Disable to High-Z Output
tHZ
0
5
0
6
0
7
ns
Output Hold from Address Change
tOH
3
3
3
ns
Chip Select to Power Up Time
tPU
0
0
0
ns
Chip Select to Power Down Time
tPD
-
Rev. 1.0 (September / 2002).
4
12
MIN
Read Cycle Time
URL: www.hbe.co.kr
10
MIN
10
15
12
ns
15
HANBit Electronics Co.,Ltd.
ns
HANBit
HMS12832M4V
WRITE CYCLE
PARAMETER
-10
SYMBOL
MIN
-12
MAX
MIN
-15
MAX
MIN
MAX
UNIT
Write Cycle Time
tWC
10
12
15
ns
Chip Select to End of Write
tCW
6
8
10
ns
Address Set-up Time
tAS
0
0
0
ns
Address Valid to End of Write
tAW
7
8
9
ns
Write Pulse Width
tWP
7
8
9
ns
Write Recovery Time
tWR
0
0
0
ns
Write to Output High-Z
tWHZ
0
Data to Write Time Overlap
tDW
5
6
7
ns
Data Hold from Write Time
tDH
0
0
0
ns
End of Write to Output Low-Z
tOW
3
3
3
ns
5
0
6
0
7
ns
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
l SB, l SB1
L
H
H
Output Disable
High-Z
lCC
L
H
L
Read
DOUT
lCC
L
L
X
Write
DIN
lCC
Note: X means Don't Care
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
5
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
PACKAGING INFORMATION
98.04 mm
10.16 mm
6.35 mm
16 mm
1
64
2.03 mm
1.02 mm
6.35 mm
1.27 mm
3.34 mm
85.09 mm
2.54 mm
0.25 mm MAX
MIN
1.29±0.08 mm
Gold : 1.04±0.10 mm
1.27
Solder : 0.914±0.10 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMS12832M4V-8
512KByte
128KX 32bit
64 Pin-SIMM
HMS12832M4V-10
512KByte
128KX 32bit
HMS12832M4V-12
512KByte
HMS12832M4V-15
HMS12832M4V-20
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
Component
Vcc
Access Time
4EA
3.3V
8ns
64 Pin-SIMM
4EA
3.3V
10ns
128KX 32bit
64 Pin-SIMM
4EA
3.3V
12ns
512KByte
128KX 32bit
64 Pin-SIMM
4EA
3.3V
15ns
512KByte
128KX 32bit
64 Pin-SIMM
4EA
3.3V
20ns
6
Number
HANBit Electronics Co.,Ltd.