NELLSEMI 1PT08E-S

1PT Series
SEMICONDUCTOR
RoHS
RoHS
Sensitive gate SCRs, 1A
Main Features
Symbol
Value
Unit
I T(RMS)
1
A
V DRM /V RRM
I GT
600 to 800
40 to 2 00
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
A2
TO-92
(1PTxxE)
A1
G
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
IT(RMS)
Tc =85ºC
1
A
Average on-state current
(180° conduction angle)
IT(AV)
Tc =85ºC
0.6
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
I2t Value for fusing
F =50 Hz
t = 20 ms
12
F =60 Hz
t = 16.7 ms
13
t p = 10 ms
I2t
A
0.72
A2s
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F = 60 Hz
T j = 110ºC
50
A/µs
Peak gate current
IGM
T p = 20 µs
T j = 110ºC
0.5
A
Forward peak gate power
P GM
T A =25 ° C, Pulse width≤0.1 µs
0.5
W
T j =110ºC
0.1
W
T j =25ºC
600 and 800
V
Average gate power dissipation
PG(AV)
Repetitive peak off-state voltage
VDRM
Repetitive peak reverse voltage
VRRM
Storage temperature range
Operating junction temperature range
Tstg
- 40 to + 150
Tj
- 40 to + 110
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Page 1 of 6
ºC
1PT Series
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
SYMBOL
(TJ = 25 ºC unless otherwise specified)
1PTxxxx
TEST CONDITIONS
IGT
V D = 12V, R L = 100Ω
VGT
V D = V DRM , R L = 3.3KΩ
VGD
RoHS
RoHS
R GK = 1KΩ, T j = 110°C
Unit
10
Min.
Max.
Max.
200
0.8
V
Min.
0.2
V
µA
IH
I T = 50mA, R GK = 1KΩ
Max.
5
mA
IL
I G = 1mA, R GK = 1KΩ
Min.
6
mA
V D = 67% V DRM , R GK = 1KΩ , T j = 110°C
Min.
10
V/µs
dV/dt
VTM
I T = 1A, t P = 380 µs
T j = 25°C
Max.
1.6
V
IDRM
V D =V DRM , V R =V RRM
T j = 25°C
Max.
5
µA
IRRM
R GK = 220Ω
T j = 110°C
Max.
0.1
mA
0.85
60
V
MΩ
V to
Threshold voltage
T j = 110°C
Max.
Rd
Dynamic resistance
T j = 110°C
Max.
THERMAL RESISTANCE
Parameter
SYMBOL
VALUE
UNIT
Rth(j-c)
Junction to case (AC)
TO-92
75
°C/W
Rth(j-a)
Junction to ambient (DC)
TO-92
150
°C/W
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
PACKAGE
V
10~30 µA
TO-92
V
V
20~50 µA
TO-92
1PTxxE-06
V
V
30~60 µA
TO-92
1PTxxE-08
V
V
50~80 µA
TO-92
1PTxxE-S
V
V
70~200 µA
TO-92
600 V
800 V
1PTxxE03
V
1PTxxE-05
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
1PTxxE-yy
1PTxxE-yy
TO-92
Note: xx = voltage, y = sensitivity
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Page 2 of 6
WEIGHT
0.23g
,
BASE Q TY
500
DELIVERY MODE
Bag
1PT Series
SEMICONDUCTOR
RoHS
RoHS
ORDERING INFORMATION SCHEME
1 PT 06
-
E
T
Current
1 = 1A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
E = TO-92
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum power dissipation versus RMS
on-state current (full cycle)
P(W)
Fig.2 RMS on-state current versus case
temperature (full cycle)
I T(RMS) (A)
5
1.0
4
0.8
3
0.6
2
0.4
1
0.2
I T(RMS) (A)
0
0
0.2
0.4
0.8
0
1.0
25
I TM (A), I²t(A²s)
20
100
75
125
I TSM (A)
18
Tjmax
Vto=0.85V
Rd=60mΩ
t=10ms
Half cycle
16
12
10
1.0
50
Fig.4 Surge peak on-state current versus number
of cycles
Fig.3 On-state characteristics (maximum values)
10
T C (°C)
0
0.6
Tj=Tjmax
Non repetltlve
Tj lntla=25 ° C
8
6
Tj=25°C
4
2
V TM (V)
0.1
0
0.5
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1.0
1.5
2.0
0
2.5
Page 3 of 6
Number of cycles
1
10
100
1000
1PT Series
SEMICONDUCTOR
Fig.5 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms,
and corresponding value of l²t
100
Fig.6 Relative variation of gate trigger current,
holding current and latching current
versus junction temperature (typical values)
l TSM (A), I²t (A²s)
IGT,IH,IL[T]/IGT,IH,IL[T]=25°C
6.0
Tj lntlal=25 ° C
5.0
dl/dt≤50 A / μS
4.0
l GT
I TSM
10
3.0
2.0
IH&IL
Tj( ° C)
1.0
t=10ms
Half cycle
1
0.01
0.1
0.0
10.0
1.0
-40
-20
0
20
40
60
80
100
120 140
Case Style
RoHS
TO-92
Ø
5.20(0.205)
4.45(0.175)
5.33(0.210)
4.58(0.180)
1
2
0.50(0.020)
0.40(0.016)
3
12.70(0.500)Min.
0.50(0.020)
0.40(0.016)
0.50(0.020)
0.40(0.016)
1.40(0.055)
1.14(0.045)
4.20(0.165)
3.20(0.126)
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RoHS
RoHS
Page 4 of 6
1.40(0.055)
1.14(0.045)