12PT Series

RoHS
12PT Series RoHS
SEMICONDUCTOR
Sensitive and Standard SCRs, 12A
Main Features
A
Symbol
Value
Unit
I T(RMS)
12
A
V DRM /V RRM
I GT
A
K
V
600 to 1000
K
mA
0.2 to 15
A
A
G
G
TO-251 (I-PAK)
(12PTxxF)
TO-252 (D-PAK)
(12PTxxG)
A
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 12A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
KA
KA
G
TO-220AB (Non-lnsulated)
(12PTxxA)
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
G
TO-220AB (lnsulated)
(12PTxxAI)
A
2(A)
K
A
G
3(G)
1(K)
TO-263 (D2PAK)
(12PTxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
IT(RMS)
TO-251/TO-252/TO-220AB/TO-263 T C =105°C
TO-220AB insulated
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
I2t Value for fusing
TEST CONDITIONS
T C =90°C
TO-251/TO-252/TO-220AB/TO-263 T C =105°C
VALUE
UNIT
12
A
8
A
TO-220AB insulated
T C =90°C
F =50 Hz
t = 20 ms
140
F =60 Hz
t = 16.7 ms
145
I2t
t p = 10 ms
A
98
A2s
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F = 60 Hz
T j = 125ºC
50
A/µs
Peak gate current
IGM
T p = 20 µs
T j = 125ºC
4
A
1
W
Average gate power dissipation
Storage temperature range
Operating junction temperature range
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PG(AV)
T j =125ºC
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
Page 1 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
STANDARD ELECTRICAL SPECIFICATIONS
12PTxxxx
SYMBOL
IGT
(TJ = 25 ºC, unless otherwise specified)
Unit
TEST CONDITIONS
Min.
Max.
Max.
V D = 12 V, R L = 33Ω
VGT
T
-
0.5
5
15
2
mA
1.3
V
0.2
V
VGD
V D = V DRM , R L = 3.3KΩ
IH
I T = 500 mA, gate open
Max.
15
30
mA
IL
I G = 1.2 I GT
Max.
30
60
mA
40
200
V/µs
dV/dt
T j = 125°C
Min.
V D = 67% V DRM , gate open
T j = 125°C
Min.
VTM
I TM = 24A, t P = 380 µs
T j = 25°C
Max.
1.6
V
Vto
Threshold voltage
T j = 125°C
Max.
0.85
V
Rd
Dynamic resistance
T j = 125°C
Max.
30
mΩ
5
µA
2
mA
IDRM
IRRM
T j = 25°C
V DRM = V RRM
T j = 125°C
SENSITIVE ELECTRICAL CHARACTERISTICS
SYMBOL
(Tj = 25 ºC, unless otherwise specified)
TEST CONDITIONS
12PTxxxx-S
IGT
VGT
Max.
Unit
Max.
200
µA
Max.
0.8
V
Min.
0.1
V
V D = 12 V, R L = 140Ω
VGD
V D = V DRM , R L = 3.3KΩ, R GK =220Ω
VRG
I RG = 10 µA
Min.
8
V
IH
I T = 50 mA , R GK = 1 KΩ
Max.
5
mA
IL
I G = 1 mA , R GK = 1 KΩ
Max.
6
mA
T j = 125°C
V D = 67% V DRM , R GK = 220Ω
T j = 125°C
Min.
10
V/µs
VTM
I TM = 24A, t P = 380 µs
T j = 25°C
Max.
1.6
V
Vto
Threshold voltage
T j = 125°C
Max.
0.85
V
Rd
Dynamic resistance
T j = 125°C
Max.
30
mΩ
5
µA
2
mA
dV/dt
IDRM
IRRM
V DRM = V RRM, R GK = 220Ω
T j = 25°C
Max.
T j = 125°C
DYNAMIC CHARACTERISTICS
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
Min.
Typ.
Max.
UNIT
tgt
Gate-controlled
turn-on time
I TM = 40A, V D = V DRM (Max.),
I G = 0.1A, dI G /dt = 5A/μs, T J = 25°C
-
2.0
-
µS
tq
Commutated
turn-off time
V D = 67% V DRM , I TM = 20A,
V R = 25V, R GK = 100Ω, dI TM /dt = 30A/μs,
dV D /dt = 50V/μs, T J = 125°C
-
70
-
µS
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Page 2 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
Rth(j-c)
IPAK/DPAK/TO-220AB/TO-263
1.3
TO-220AB insulated
4.6
D-PAK
70
D²PAK
45
I-PAK
100
UNIT
Junction to case (DC)
°C/W
S = 0.5 cm 2
Rth(j-a)
VALUE
Parameter
SYMBOL
Junction to ambient (DC)
S=1
cm 2
TO-220AB, TO-220AB insulated
°C/W
60
S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
PACKAGE
SENSITIVITY
1000 V
600 V
800 V
12PTxxA-S/12PTxxAl-S
V
V
V
200 µA
TO-220AB
12PTxxA-T/12PTxxAl-T
V
V
V
0.5~5 mA
TO-220AB
12PTxxA/12PTxxAl
V
V
V
2~15 mA
TO-220AB
12PTxxF-S
V
V
V
200 µA
I-PAK
12PTxxF-T
V
V
V
0.5~5 mA
I-PAK
12PTxxF
V
V
V
2~15 mA
I-PAK
12PTxxG-S
V
V
V
200 µA
D-PAK
12PTxxG-T
V
V
V
0.5~5 mA
D-PAK
12PTxxG
V
V
V
2~15 mA
D-PAK
12PTxxH-S
V
V
V
20 µA
D²-PAK
12PTxxH-T
V
V
V
0.5~5 mA
D²-PAK
12PTxxH
V
V
V
2~15 mA
D²-PAK
ORDERING INFORMATION
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
12PTxxA-y
12PTxxA-y
TO-220AB
2.0g
50
Tube
12PTxxAI-y
12PTxxAI-y
TO-220AB (insulated)
2.3g
50
Tube
12PTxxF-y
12PTxxF-y
TO-251(I-PAK)
0.40g
80
Tube
12PTxxG-y
12PTxxG-y
TO-252(D-PAK)
0.38g
80
Tube
12PTxxH-y
12PTxxH-y
TO-263(D²-PAK)
2.0g
50
Tube
ORDERING TYPE
Note: xx = voltage, y = sensitivity
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Page 3 of 7
RoHS
12PT Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
- S
12 PT 06
Current
12 = 12A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
H = TO-263 (D²PAK)
IGT Sensitivity
S = 70~200 µA
T = 0.5~5 mA
Blank = 2~15 mA
Fig.2 Average and DC on-state current versus
case temperature
I T(AV) (A)
Fig.1 Maximum average power dissipation versus
average on-state current
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
14
α=180°
DC
12
10
α=180°
TO-251/TO-252
TO-263/TO-220AB
8
6
TO-220AB
Insulated
4
360°
2
I T(AV) (A)
1
2
3
4
α
6
5
7
8
0
9
25
75
50
100
125
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
3.0
T case (°C)
0
K=[Zth(j-c)/Rth(j-c)]
I T (AV)(A)
1.0
Device mounted on FR4 with
Recommended pad layout
2.5
DC
2.0
0.5
D²PAK
1.5
α=180°
DPAK
1.0
0.2
0.5
T amb (°C)
0.0
0
25
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50
75
100
0.1
1E+3
125
Page 4 of 7
t p (s)
1E+2
1E+1
1E+0
RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.5 Relative variation of thermal impedance
Junction to ambient versus pulse duration
(DANK)
Fig.6 Relative variation of gate trigger and
holding current versus junction
temperature for I GT =200µA
K=[Zth(j-a)/Rth(j-a)]
1.00
2.0
1.8
1.6
Device mounted on FR4 with
Recommended pad layout
DPAK
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
I GT
1.4
1.2
D²PAK
0.10
1.0
0.8
TO-220AB/IPAK
lH& IL
R GK =1KΩ
0.6
0.4
0.2
0.0
-40
t p (s)
0.01
1E-2
1E+0
1E-1
1E+1
1E+2
5E+2
60
40
80
100
140
120
I H [R GK ] / I H [R GK =1KΩ]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
5.0
4.5
5mA & 15mA Series
T j =25°C
200µA Series
4.0
3.5
I GT
3.0
2.5
2.0
1.5
lH& IL
1.0
0.5
0.0
1E-2
T j (°C)
-20
0
20
40
60
80
100
120 140
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(Typical values)
10.0
20
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
T j (°C)
0
-20
R GK (KΩ)
1E-1
1E+0
1E+1
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for I GT =200µA
dV/dt[R GK ] / dV/dt[R GK =220Ω]
4.0
T j =125°C
V D =0.67 X V DRM
dV/dt[C GK ] / dV/dt[R GK =220Ω]
V D =0.67 X V DRM
T j =125°C
R GK =220Ω
3.5
3.0
2.5
2.0
1.0
1.5
1.0
0.5
R GK (KΩ)
0.1
0
200
400
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600
C GK (nF)
0.0
800
1000
0
1200
Page 5 of 7
25
50
75
100
125
150
RoHS
12PT Series RoHS
SEMICONDUCTOR
Fig.11 Surge peak on-state current versus
number of cycles
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t versus
sinusoidal pulse width
I STM (A)
I TSM (A),I²t(A²s)
2000
One cycle
Non repetitive
T j initial=25°C
dI/dt Iimitation
100
I²t
Repetitive
Tc=105°C
Number of cycles
t p (ms)
10
100
10
1
1000
10.00
Fig.14 Thermal resistance junction to ambient
versus copper surface under tab (D²PAK)
I TM (A)
100
1.00
0.10
0.01
Fig.13 On-state characteristics (maximum
values)
200
Tj inital=25°C
I TSM
1000
t p =10ms
R th (j-a)(°C/W)
100
Tjmax
V t0 =0.85V
Rd=30mΩ
Epoxy printed circuit board FR4
copper thickness = 35µm
80
60
Tj=max
DPAK
10
40
Tj=25°C
D²PAK
20
V TM (V)
1
0.0 0.5
1.0
1.5
2.0
2.5
S(cm²)
0
3.0 3.5
0
4.5 5.0
4.0
2
4
6
8
10
12
14
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
K
PIN
A
16.13 (0.635)
15.87 (0.625)
G
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
2(A)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
3(G)
1(K)
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Page 6 of 7
16
18
20
RoHS
12PT Series RoHS
SEMICONDUCTOR
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
1.37(0.054)
5.2(0.204)
0.62(0.024)
0.48(0.019)
A
6.2(0.244)
6(0.236)
K
A
G
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
1.37(0.054)
0.62(0.024)
0.48(0.019)
A
K
A
G
9.35(0.368)
10.1(0.397)
0.89(0.035)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
6.2(0.244)
6(0.236)
0.62(0.024)
0.45(0.017)
4.57(0.180)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
1.40 (0.055)
1.14 (0.045)
A
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
K
A
G
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
2(A)
3(G)
1(K)
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Page 7 of 7